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  • American Institute of Physics (AIP)  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Plasma source ion implantation dose uniformity of a 2×2 array of spherical targets (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1707-1712 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have employed Rutherford backscattering spectroscopy and secondary ion mass spectrometry to characterize the ion implantation dose uniformity which can be achieved with plasma source ion implantation (PSII), a non-line-of-sight technique for ion implantation of nonplanar targets in nonsemiconductor applications. In order to characterize the dose uniformity achievable with PSII, four spherical Ti-6Al-4V targets were PSII implanted simultaneously as a 2×2 square array in a nitrogen plasma with density 3×109 cm−3 at an energy of 50 keV to a nominal dose of 3×1017 atoms/cm2. The measured root-mean-square variation of both the retained dose and the mean range was found to be less than 15%, which is well within the acceptable tolerance range for nonsemiconductor applications of ion implantation. Our results demonstrate that PSII can achieve acceptable dose uniformity on nonplanar targets without target manipulation, and that such uniformity can be achieved in a batch processing mode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342942
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  • 2
    Electronic Resource
    Electronic Resource
    Atomically layered heteroepitaxial growth of single-crystal films of superconducting Bi2Sr2Ca2Cu3Ox (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 931-933 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic layering of high-temperature superconducting compounds has been employed to grow films of Bi2Sr2Ca2Cu3Ox, in situ, on SrTiO3 substrates. Atomic monolayers of the constituent atoms were sequentially deposited by shuttering the fluxes from thermal effusion cells, and oxidation of the film was accomplished using a beam of ozone. The films were superconducting as-grown, with complete resistive transitions as high as 86 K. Moreover, reflection high-energy electron diffraction patterns observed during growth, as well as post-growth analysis by x-ray diffraction and high-resolution scanning electron micrography, indicate the films to be single crystal and heteroepitaxial, with in-plane a-b twinning.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104270
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