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  • 1
    Electronic Resource
    Electronic Resource
    Erratum: Vibrational excitation and quenching of N+2 in collision with He at relative energies below 1 eV [J. Chem. Phys. 88, 213 (1988)] (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 4426-4427 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457675
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  • 2
    Electronic Resource
    Electronic Resource
    Vibrational excitation and quenching of N+2 in collision with He at relative energies below 1 eV (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 213-219 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A selected ion flow drift tube (SIFDT) has been used to measure the vibrational excitation of N+2 ions in collisions with He from the detected threshold to about 0.8 eV relative collision energy. The vibrational quenching of N+2 by He has been measured over the same energy range. The measured excitation and quenching rate constants are found to satisfy the principle of detailed balance, implying no significant role for rotational excitation in the excitation or quenching processes. The quenching rate constant fits a linear Landau–Teller plot, −ln KqαKE−1/3cm, in spite of the fact that the collisions at all energies studied are well within the low energy adiabatic regime in which the collision time is long compared to h/ΔEv.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.454639
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  • 3
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing: An efficient means to reveal chromium profiles in Si after diffusion and gettering (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 611-613 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The combined use of rapid thermal annealing and deep level transient spectroscopy is described as an efficient means to reveal chromium profiles in silicon wafer after various thermal treatments. The proposed method has been successfully applied to observe the depletion of chromium atoms at the near-surface region of intentionally contaminated Czochralski-grown silicon reslting from a conventional three-step gettering cycle.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100894
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  • 4
    Electronic Resource
    Electronic Resource
    Growth and structure of rapid thermal silicon oxides and nitroxides studied by spectroellipsometry and Auger electron spectroscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5242-5248 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal oxidation of Czochralski-grown silicon in either O2 or N2O atmospheres have been studied using spectroellipsometry and Auger electron spectroscopy. Multiwavelength ellipsometric data were processed in order to separately derive the thicknesses and refractive indexes of rapid thermal dielectrics. Results revealed a significant increase of the mean refractive index as the film thickness falls below 20 nm for both O2 or N2O oxidant species. A multilayer structure including an about 0.3-nm-thick interfacial region of either SiOx or nitroxide in the case of O2 and N2O growth, respectively, followed by a densified SiO2 layer, was found to accurately fit the experimental data. The interfacial region together with the densified state of SiO2 close to the interface suggest a dielectric structure in agreement with the continuous random network model proposed for classical thermal oxides. Auger electron spectroscopy analysis confirmed the presence of noncrystalline Si—Si bonds in the interfacial region, mostly in the case of thin oxides grown in O2. It was speculated that the initial fast growth regime was due to a transient oxygen supersaturation in the interfacial region. Besides, the self-limiting growth in N2O was confirmed and explained in agreement with several recently published data, by the early formation of a very thin nitride or oxynitride membrane in the highly densified oxide beneath the interface. The beneficial effect of direct nitrogen incorporation by rapid thermal oxidation in N2O instead of O2 for the electrical behavior of metal-oxide-semiconductor capacitors is likely a better SiO2/Si lattice accommodation through the reduction of stresses and Si—Si bonds in the interfacial region of the dielectric.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357174
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  • 5
    Electronic Resource
    Electronic Resource
    Charged particle activation analysis study of the oxygen outdiffusion from Czochralski-grown silicon during classical and rapid thermal annealing in various gas ambient (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6115-6119 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen outdiffusion from Czochralski silicon has been studied under various atmospheres, such as oxygen, nitrogen, and argon/hydrogen (10%). The enhancement of the oxygen diffusion coefficient by hydrogen has been confirmed. Besides, thermal treatments in a halogen lamp furnace has led to a 100-fold higher oxygen diffusion coefficient under a neutral atmosphere, and to a 1000-fold enhancement under a hydrogenated atmosphere. Moreover, in this latter case, a level at 6.5×1017 atoms cm−3 in the oxygen profile has been observed at the surface of the sample. Electron-hole pair generation under intense ultraviolet radiation eventually combined with the presence of hydrogen is likely responsible for the anomalously high oxygen diffusion during rapid thermal processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355174
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  • 6
    Electronic Resource
    Electronic Resource
    Influence of rapid thermal annealing and internal gettering on Czochralski-grown silicon. I. Oxygen precipitation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2707-2711 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of rapid thermal annealing at 1200 °C as a pretreatment on the precipitation of oxygen during a three-step internal gettering process is studied thanks to infrared analyses. The influence of both the duration and the ambient of this pretreatment is considered. We define a limit duration of the rapid thermal annealing from which the further precipitation is greatly enhanced through a precipitation path leading to the formation of quasispherical precipitates different from the platelets. It is also shown that hydrogen introduced during the rapid thermal anneal delays the oxygen precipitation during the internal gettering process. Finally, considering the inefficiency of the internal gettering of chromium after a rapid thermal annealing at 1200 °C under argon/hydrogen, a new interpretation is proposed: a rapid thermal annealing would produce a modification in the oxygen precipitation path, leading to the formation of precipitates which would not be suitable for an efficient gettering effect. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361141
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  • 7
    Electronic Resource
    Electronic Resource
    Carrier compensation induced by rapid thermal annealing in undoped InP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 648-650 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The region beneath the interface of an InGaAs layer grown onto an undoped InP substrate by molecular beam epitaxy was investigated before and after rapid thermal annealing. Capacitance-voltage measurements revealed a depletion region in the underlying InP due to donor compensation that is mainly caused by the Fe-related Ec−0.63 eV-deep level observed by deep level transient spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355807
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  • 8
    Electronic Resource
    Electronic Resource
    Hole trap level generation in silicon during rapid thermal annealing: Influence of substrate type and process conditions (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3320-3324 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole trap level generation in boron-doped silicon by rapid thermal annealing between 900 and 1100 °C has been studied using deep level transient spectroscopy, with emphasis on the effects of substrate type and process parameters. A dominant hole trap level at Ev+0.30 eV and two accompanying hole trap levels at Ev+0.22 eV and Ev+0.40 eV in lower concentrations have been systematically detected in Czochralski, float zone, and epitaxial substrates, in a less than 5-μm-thick surface layer. The defect state concentrations were observed to increase monotonically with both the annealing temperature and the cooling rate. Higher concentrations of hole trap levels were measured in the Czochralski and epitaxial substrates than in the float zone substrate. Finally, both a silicidation and an oxidation reaction during the high-temperature plateau totally inhibited the formation of defect states. We suggest that the defect centers responsible for the observed hole trap levels could be formed during the high-temperature plateau with the participation of dissolved as-grown impurities and metal contaminants diffused from the wafer surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350952
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  • 9
    Electronic Resource
    Electronic Resource
    Optical nonlinear effects in GaAs/GaAlAs Bragg reflectors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3190-3191 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Band filling effects are used to modify the absorption and refractive index of bulk GaAs/Ga1−xAlxAs layers in a Bragg reflector in the wavelength region between the band gap of the two materials. Significant reflectivity modifications are observed in a subpicosecond regime.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345402
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  • 10
    Electronic Resource
    Electronic Resource
    Analytical calculation of the capacitance associated with a single quantum well located in a junction (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7912-7914 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We perform an analytical calculation of the capacitance of a single quantum well located in a junction versus the applied bias (the so-called capacitance-voltage characteristic), using mainly the Poisson equation and the Fermi statistics of the electrons in the well. This model reproduces the experimental behavior of such a structure and is validated by a comparison with a complete numerical simulation. Finally, we use our model to study a GaAs-GaInAs-GaAs single quantum well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347480
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