ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A new technique of the simultaneous excitation of a magnetron sputtering discharge by rf and dc was used for the deposition of undoped ZnO- and Al-doped ZnO (ZnO:Al) films. By this technique, it was possible to change the ion-to-neutral ratio ji/jn on the substrates during the film growth by more than a factor of ten, which was revealed by plasma monitor and Langmuir probe measurements. While for a pure dc discharge the ions impinging onto a floating substrate have energies of about Ei(approximate)17 eV, the rf discharge is characterized by Ar-ion energies of about 35 eV. Furthermore, the ion current density for the rf excitation is higher by a factor of about five, which is caused by the higher plasma density in front of the substrate. This leads to a much higher ion-to-neutral ratio ji/jn on the growing film in the case of the rf discharge, which strongly influences the structural and electrical properties of the ZnO(:Al) films. The rf-grown films exhibit about the three times lower specific resistances (ρ(approximate)6×10−4 Ω cm), due to lower mechanical stress, leading to higher charge carrier concentrations and mobilities. Undoped ZnO films exhibited the largest compressive stress values up to 2.8 GPa. The aluminium-doped films have a better (001) texture and larger grains (dg(approximate)38 nm), which can be attributed to the beneficial role of Al as a surfactant. The better crystalline film quality of the ZnO:Al films is the reason for the much lower compressive stress of 〈0.5 GPa in these layers. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.366798
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