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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 1306-1310 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Impact bruising during harvesting, manual and mechanical handling, and during transportation of agricultural perishables results in major crop loss and/or commodity quality loss. An instrumented pseudofruit has been developed which permits automatic measurement and recording of vector accelerations (impacts) along with the time of occurrence. This device will assist in identifying time and amplitude of damaging impacts. The features of this device are: (1) It is a miniaturized, totally integrated, portable digital system which is cast in a 15-cm rigid cube or 10-cm-diam sphere. (2) It is calibrated to provide an adequate degree of accuracy for the measurement of impact it will experience. (3) Serial communication is provided to permit program initialization and data transfer to an independent processing computer, where custom-developed routines convert the measured impacts into equivalent bruising and/or drop heights for the fruit of interest (e.g., apple).
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1781-1783 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double-crystal x-ray diffraction has been successfully used to study dimensional and compositional variations in Si1−x Gex /Si superlattices. For most samples studied an adequate agreement between theoretical and experimental diffraction profiles is obtained by using a theoretical model (kinematical) which assumes uniform superlattices with abrupt interfaces. In some samples, however, the superlattice-related diffraction peaks reveal an asymmetric broadening which is shown by comparison with dynamical diffraction simulations to be due to a grading in layer compositions and thicknesses throughout the superlattice stack. Detailed analysis of the diffraction data identified a gradual drift of 1.25% in the Ge flux during molecular beam epitaxy (MBE) growth. The MBE system parameters were modified to compensate for this effect and allow the growth of more structurally perfect strained-layer superlattices.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4329-4333 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that annealing of the buried oxide layer used for device isolation generates point defects in the SiO2 film and that this defect generation is independent of temperature above 1000 °C. Electron paramagnetic resonance data obtained on thermally grown buried oxides and those fabricated by ion implantation indicate that the defect is intrinsic to the structure of SiO2 and is associated with an oxygen deficient environment. The similarity in the generation of the defects studied here and the formation of SiO observed in earlier studies of low pressure high temperature oxidation suggests that the formation of the buried oxide defect is related to the reduction of SiO2 and the release of SiO. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1010-1013 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Admittance spectroscopy has been used to determine the value of the valence-band discontinuity in a p-type GaAs/Al0.3Ga0.7As multiple-quantum-well system. The structures were multiple quantum wells grown by molecular-beam epitaxy on semi-insulating GaAs substrates. Three Be-doped (p-type) GaAs wells, 30, 35, and 40 A(ring) wide, were used in these measurements. The barriers were undoped. Based on our measurements and a Fermi-level determination from an 8×8 envelope function approximation calculation of the valence electronic structure of the GaAs/AlGaAs system, the valence-band discontinuity, ΔEv, was found to be 0.165 eV. Using established relations, the band-gap difference in the GaAs/AlGaAs system ΔEg for xAl=0.3 was calculated to be 0.429 eV, which, together with the valence-band offset determined in this work, gives the ratio of the conduction–to–valence-band offsets as 60:40. These values are in excellent agreement with those determined by capacitance-voltage profiling, thus confirming the utility of the admittance spectroscopic technique for determining the band discontinuities in band-gap-engineered materials.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3603-3607 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of grating coupled waveguides are theoretically modeled and practically demonstrated using nematic and smectic liquid crystals as thin (0.7 μm) waveguide layers. Voltage induced reorientation of the liquid crystal is shown to lead to large changes in reflectivity and transmissivity when the angle of incidence initially corresponds to a guided mode resonance. Time resolved measurements using these thin cells show that the switching time for the nematic phase can be faster than the smectic phase.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2196-2206 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interactions of deuterium gas (D2) with implantation-formed Si-SiO2-Si structures were investigated in the temperature range 500–1000 °C using nuclear-reaction analysis. At 600 °C and above there is substantial permeation of D through the overlying Si layer, and this D becomes stably bound within the buried SiO2. The reactions within the implantation-formed oxide differ significantly from those in thermal oxides and are characterized by two distinct time regimes. In the first regime there is a rapid transient reaction which, at least at 600 °C, is controlled by permeation through the Si overlayer. After the initial transient there is a much slower reaction within the oxide, prominent at 700 °C and higher, which is controlled by a reaction barrier. The results indicate that the implantation-formed oxides contain more numerous hydrogen-reactive sites than do silica or thermal oxides on Si, and further that the number of these sites is substantially increased by Si epitaxial deposition. Deuterium permeation through the Si overlayer was used to determine the permeability of hydrogen in Si at 600 °C for the first time.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8111-8121 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anode sheaths are explored in detail for collisional, identical-specie-temperature plasmas where sheath dimensions are in the micron range. The selected approach involves postulation of a specific electric field distribution with three shape factors. Previous research using this approach is verified and expanded upon using greater parameter ranges. z, a dimensionless quantity specifying plasma composition and condition, groups diverse plasmas into families exhibiting similar sheath characteristics. η, a nondimensional ratio of electrical energy to thermal energy in the sheath, allows temperature effects to be studied. This investigation focuses on plasma families that span a z range of 1.1729 to 2.1493 at η values defined by discrete plasma temperatures of 6000, 3000, and 300 K. Results indicate that at the lower temperatures, charge production in the outer sheath is somewhat generic to the electric field distribution, and that the sheaths themselves are nearly unaffected by substantial changes in temperature (i.e., η). Conversely, sheath density and extent are shown to vary significantly for differing z values. Equations governing cylindrical anodes generate sheaths that are virtually identical to corresponding planar cases. It is shown that only those anodes whose radii are comparable to the plasma's characteristic radius (γ) must be treated with the cylindrical formulation; low- and moderate-pressure plasmas would require micron-diameter anodes to be thus affected. Finally, an analytical approach shown yields solutions that confirm the numerical results, and offers an algebraic approximation for high-η plasmas.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2126-2128 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice-matched p-doped GaAs–Ga0.51In0.49P quantum well intersub-band photodetectors with three different well widths have been grown on GaAs substrates by metal-organic chemical-vapor deposition and fabricated into mesa structures. The photoresponse cutoff wavelength varies between 3.5 and 5.5 μm by decreasing the well width from 50 down to 25 A(ring). Dark current measurements as a function of temperature reveal activation energies for thermionic emission that closely correspond to measured cutoff wavelengths. Experimental results are in reasonable agreement with Kronig–Penney calculations. © 1995 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4140-4148 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies have been made of the macroscopic and microscopic electrical inhomogeneity in undoped bulk GaAs single crystals grown from As/As+Ga melt ratios of 0.48–0.45. Microscopic inhomogeneity was characterized by contact resistance line scans and whole wafer anodization, which gives high-resolution two-dimensional images of the low-resistivity p-type regions within the wafers. The resistivity was nonuniform in wafers from 0.48 As/As+Ga crystals, having a W-shaped radial dependence with minima in the 〈110〉 directions and varying by six orders of magnitude across a wafer, whereas it was uniform in low-resistivity wafers from 0.45 As/As+Ga crystals at fractions of melt solidified, g〉0.4. Precise correlation of microscopic inhomogeneity with grown-in linear and cellular arrays of dislocations was obtained in nonuniform wafers, but no correlation with slip dislocations was observed. Anodization images show that the carrier concentration is quantitatively in agreement with a uniform acceptor background compensated by EL2 concentration fluctuations of factors of 2–3 at the dislocation networks. Inhomogeneity variation with g and As/As+Ga ratio is consistent with macroscopic and microscopic decrease in EL2 with melt stoichiometry.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5704-5708 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that the hyperfine field in a crystal can be characterized in a short measurement using resonant nuclear diffraction at a high-brightness synchrotron x-ray beamline. In addition to the strength of the field, this technique is sensitive to the field direction and to the crystal-structure factor of the nuclear sites. It is possible to separately measure the field at different crystallographic subgroups of nuclei. These principles are illustrated with an experiment using a crystal of 57Fe-enriched yttrium iron garnet, and future applications are discussed.
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