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  • 1
    Electronic Resource
    Electronic Resource
    Excitation of higher harmonics in transient laser gratings by an ablative mechanism (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1640-1642 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser-induced transient gratings were excited at the surface of an aluminum film by picosecond laser pulses. The counterpropagating surface acoustic waves with a fundamental frequency of 70 MHz that were launched were monitored outside the source region by laser probe beam deflection. The second and third harmonics were observed for ablative interaction of the laser radiation with the aluminum surface. A simple model is presented that describes the effects on the basis of nonlinear photoacoustic signal generation at the source due to a nonsinusoidal driving force. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122231
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  • 2
    Electronic Resource
    Electronic Resource
    Large change of the giant magnetoresistance behavior after changing the spacer from Cu to CuMn alloy in Co/spacer/Co structures (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5030-5032 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The giant magnetoresistance (GMR) effects in sandwiched Co/Cu/Co and Co/CuMn/Co structures have been investigated. The GMR oscillates with the spacer thickness for both cases, but is nearly antiphased. With diluted Mn atoms in the Cu spacer, the GMR curve as a function of the magnetic field changes a lot, and the saturation/switching field for GMR can be reduced greatly compared with that in Co/Cu/Co systems. This may indicate one way to obtain a highly sensitive GMR. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370081
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of hydrogen-terminated Si(111) surfaces by sum-frequency surface vibrational spectroscopy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3357-3359 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sum-frequency surface vibrational spectroscopy was used to characterize H-terminated Si(111) surfaces prepared by different methods. It was found that flash heating of a sample to 1500 K followed by H2 dosing at 900 K yields a surface as good in quality as a wet chemically treated surface. Both surfaces are far superior than that prepared by atomic H adsorption. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125350
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  • 4
    Electronic Resource
    Electronic Resource
    Oxygen-induced amorphous structure of tungsten thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2211-2213 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A combination of energy-filtered electron diffraction, electron energy-loss spectroscopy, transmission electron microscopy, and x-ray diffraction are used to establish that oxygen impurities incorporated in tungsten films prepared by magnetron sputtering in the early stage of the deposition play a dominant role in the formation of an amorphous phase. Energy-filtered electron diffraction data collected from a range of amorphous films were Fourier transformed to a reduced density function (RDF) and matched with an amorphous model. The results show that better agreement with the experimental RDF is achieved if the amorphous model consists of a random continuous matrix of clusters with W3O-like symmetry. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124967
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  • 5
    Electronic Resource
    Electronic Resource
    Stresses, deformation, and void nucleation in locally debonded metal interconnects (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5525-5530 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three-dimensional analyses of stresses and deformation in metal interconnects were carried out using the finite element method within the continuum framework. Particular attention is devoted to the preexisting local debond between the metal line and dielectric, which serves as the void nucleation site. Thermal mismatch induced stresses in the aluminum line near the interface defect are considered. The local reduction of stresses as well as the stress gradient along the line are quantified for various debond sizes. It is found that, for aluminum lines with an aspect ratio of unity, the influence of local debond on the stress profile along the line direction becomes negligible in regions greater than about one line height away from the debond edge. A unique stress pattern due to the preexisting debond is identified, which forms the basis of constructing a void nucleation model in terms of crystallographic slip. This three-dimensional modeling provides quantitative information on the initial stress field useful for modeling stress and electromigration induced voiding; it also confirms the qualitative features of stress evolution obtained from a previous two-dimensional analysis. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368597
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  • 6
    Electronic Resource
    Electronic Resource
    Stresses, curvatures, and shape changes arising from patterned lines on silicon wafers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1388-1398 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental and numerical results are presented on the evolution of stresses and the accompanying changes in the overall curvatures due to the patterning of silicon oxide lines on silicon wafers and subsequent thermal loading. The finite element analysis involves a generalized plane strain formulation, which is capable of predicting the wafer curvatures in directions parallel and perpendicular to the lines, for both the patterning and thermal cycling operations. The predictions compare reasonably well with systematic curvature measurements for several different geometrical combinations of the thickness, width and spacing of the patterned lines. The non-uniform stress fields within the fine lines and the substrate are also analyzed. It is shown both experimentally and theoretically that certain geometries of patterned lines on the substrate induce dramatic shape changes and reversals of curvature in the direction perpendicular to the lines. The mechanistic origin of this effect is identified to be the Poisson effect arising from the anisotropic strain coupling in the patterned structure. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362938
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  • 7
    Electronic Resource
    Electronic Resource
    Modeling of thermal stresses in metal interconnects: Effects of line aspect ratio (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1578-1581 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Numerical results are presented on the evolution of thermal stresses in metal interconnects. Finite element analyses are carried out for a series of parallel aluminum lines embedded within silicon dioxide. The effects of line aspect ratio on the longitudinal and hydrostatic stresses in lines are investigated, for various spaces between lines. Comparisons with the results based on an isolated line under passivation are also made. It is shown that, contrary to what was frequently found by employing the single-line approach, maximum stresses in periodically arranged aluminum lines do not occur when the line width and the line height are approximately equal. The variation of stresses with line aspect ratio is affected by the spacing between lines. Implications of the present findings to the modeling of stresses and to the damage evolution through void formation are discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365944
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  • 8
    Electronic Resource
    Electronic Resource
    Integrated high Tc superconducting magnetometer with multiturn input coil and grain boundary junctions (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2081-2083 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated and tested integrated magnetometers based on the superconducting quantum interference device (SQUID). The magnetometer consists of two patterned films of YBa2Cu3O7, separated by an insulating layer of SrTiO3. A multiturn input coil was integrated on top of the SQUID, where the misorientation angle in a SrTiO3 bicrystal substrate was used to form the grain boundary junctions. The noise spectrum was characterized at 77 K and showed that above 10 Hz the magnetometer sensitivity is limited by a white noise level of around 4×10−5 Φ0/Hz1/2. In the 4 mm × 4 mm detection area of the input coil, this translates into a magnetic field sensitivity of 320 fT/ Hz1/2 at 100 Hz. Compared to the theoretical value of an optimized SQUID the white noise level of the magnetometer is two times higher. Below 10 Hz the noise is dominated by 1/f noise mainly due to the critical current fluctuations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115085
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  • 9
    Electronic Resource
    Electronic Resource
    Novel design of rapid single flux quantum logic based on a single layer of a high-Tc superconductor (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 138-140 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We suggest a new design of rapid single flux quantum (RSFQ) logic circuits which is based on a single superconducting layer and does not require a superconducting ground plane. Small inductances of about 10 pH, obligatory for RSFQ circuits, are formed as narrow slits of widths comparable to the London penetration depth ((approximately-equal-to)0.15 μm). The design allows us to decrease the geometric size of the RSFQ cell. Test circuits with YBaCuO grain boundary junctions on asymmetric 32° Y– ZrO2 bicrystals were used to measure the slit inductance per unit length and the mutual inductance of neighboring slits. A typical inductance of a 0.4 μm slit was found to be 0.7–0.8 pH/μm. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115472
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  • 10
    Electronic Resource
    Electronic Resource
    Magneto-optic observation of anomalous Meissner current flow in superconducting thin films with slits (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3590-3592 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Slits patterned into a YBa2Cu3O7−δ thin film were observed to obstruct Meissner sheet currents leading to an imbalance in the local Meissner screening properties. The new phenomenon was studied with magneto-optic imaging where twin lobes of opposite flux polarity were seen to form near the slits and inside the Meissner region. The lobe closest to the sample edge is always polarized opposite to the applied field. At weak fields, the anomalous flux generation is reversible. At higher fields, but still sufficiently small to keep the vortex penetration front away from the slits, the anomalous current starts nucleating flux lines which become trapped when the field is removed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117216
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