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  • 1
    ISSN: 1090-6487
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We report on a successful attempt to fabricate a Coulomb blockade electrometer consisting of an ultrasmall YBa2Cu3O7−δ (YBCO) island coupled to two gold electrodes through a high-resistance native surface tunnel barrier. A third electrode placed near the island was used as an electrostatic gate. Spectra typical for tunneling into the YBCO superconductor were reproducibly measured. At temperatures below 0.5 K the low-bias conductance was suppressed by the Coulomb blockade. The blockade could be periodically varied by the gate potential. An external magnetic field of up to 5 T strongly influenced the transport via the island but without any change in the period of the Coulomb oscillations.
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  • 2
    ISSN: 1090-6533
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract High-T c superconducting films of YBa2Cu3Ox on sapphire with an additional buffer layer of strontium titanate (actually, on heterostructures (100)SrTiO3/(001)YBa2Cu3Ox/(100)CeO2/(1102)Al2O3) are obtained by laser deposition, and their superconducting characteristics are investigated. It is shown that that buffering the sapphire by a strontium titanate film can raise the critical temperature of the YBa2Cu3Ox films by two degrees and give a severalfold increase in the critical current density.
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  • 3
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Epitaxial SrBi2Nb2O9 films were grown by laser ablation on (001)YBa2Cu3O7−δ /(100)SrTiO3 and (001)NdGaO3, with c axis normal to the substrate plane. The SrBi2Nb2O9 films were grown in a layer-by-layer regime on NdGaO3 substrates in 25-Å steps at a condensation temperature of 700 °C. Microinclusions of secondary phases and a-oriented grains were observed to exist on the surface of (001)SrBi2Nb2O9 films grown on (001)YBa2Cu3O7−δ /(100)SrTiO3. The dielectric permittivity of the SrBi2Nb2O9 films measured along the c axis is 123 (T=300 K, f=100 kHz), and tan δ≈0.04.
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Physics of the solid state 39 (1997), S. 195-199 
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The formation of epitaxial heterostructures including YBa2Cu3O7−δ and SrTiO3 thin films on R-plane sapphire substrates has been studied. The thin CeO2 layer and the CeO2/SrBi2Nb2O9 epitaxial bilayer served as buffers. The temperature dependence of the dielectric permittivity ɛ of the SrTiO3 film behaved in essentially different ways when incorporated in the YBa2Cu3O7−δ /SrTiO3/YBa2Cu3O7−δ and in Ag/SrTiO3/YBa2Cu3O7−δ capacitor structures. An external bias U b=±2.5 V applied to a plane-parallel YBa2Cu3O7−δ /SrTiO3/YBa2Cu3O7−δ capacitor structure (T〈100 K) reduced the ɛ of the SrTiO3 film to one half its original value.
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Physics of the solid state 39 (1997), S. 1542-1547 
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A bi-epitaxial (001)YBa2Cu3O7−δ /(110)BaZrO3/(001)CeO2 three-layer heterostructure has been grown on (100)SrTiO3 by laser ablation. The epitaxial relations between the layers making up the heterostructure were derived from x-ray diffraction data. The I cRn product for the bi-epitaxial Josephson junctions thus obtained was within 1–1.5 mV for 4.2 K, and 30–60 µV for 77 K. The normal resistance R n=(2–5 Ω) was practically independent of temperature. The magnetic field dependences of I c had typically a clearly pronounced main maximum, followed by distorted subsequent peaks. Interaction of the Josephson ac current with self-induced electromagnetic waves at the 45° grain boundary and with external microwave radiation (f=11 GHz) produced current steps in the I-V characteristics of the bi-epitaxial junctions at the corresponding voltages.
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  • 6
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Thin films of the Nd1+x Ba2−x Cu3Oy high-T c superconductor (NBCO) with different neodymium/barium ratios have been obtained by laser ablative cosputtering of targets with different elemental compositions. The films with excess neodymium (x〉0) had a low surface particle density and were rough, but their critical temperature decreased with increasing x. Conversely, barium-rich films (x〈0) exhibited independence of the superconducting properties of the film composition, with an appreciable number of particles observed on the surface. Substitution of Ba for Nd in NBCO thin films is apparently impeded, so that excess barium precipitates in the form of (Ba,Cu)Oz particles. The structure and superconducting properties of NBCO reveal a strong dependence on the conditions of film saturation by oxygen.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9221-9223 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Josephson junctions and dc superconducting quantum interference devices (SQUIDs) have been fabricated in ex situ epitaxial Tl2Ba2CaCu2O8 films on bicrystal LaAlO3 substrates with symmetric 32° [001] tilt grain boundaries. The critical temperature Tc, of the junctions was in the range 105–107 K and the critical current densities at 77 K varied between 3×102 and 3×104 A/cm2, two or three orders of magnitude less than those of the film. The I–V curves are described by a resistively shunted junction model. Close to Tc, the temperature dependence of the critical current was described by (1−T/Tc)2. The flux noise spectra SΦ(f) of dc SQUIDs were measured in the locked-loop regime with constant current bias at temperatures up to 94 K. The white noise level was 50μΦ0/(square root of)Hz at 77 K. The crossover frequency to 1/f noise was low, about 5 Hz, and the flux noise level at 1 Hz was 440μΦ0/(square root of)Hz. © 1996 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4591-4595 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial trilayer heterostructures of YBa2Cu3O7−δ/BaxSr1−xTiO3/YBa2Cu3O7−δ were grown on silicon-on-sapphire buffered by a double layer of CeO2/Y–ZrO2. Such structures may be considered for tunable microwave filters. The top and bottom YBa2Cu3O7−δ films were well c-axis oriented, free from microcracks and had superconducting transitions Tc's in the range 86–90 K. A thin antidiffusion layer of SrTiO3 (d≈70 A(ring)) between YBa2Cu3O7−δ and BaxSr1−xTiO3 (x=0.25–0.9) promoted better crystallinity and higher Tc of the top superconducting film. An Ag/BaxSr1−xTiO3/YBa2Cu3O7−δ capacitor structure was used to determine the dielectric permittivity and the high frequency loss tan δ of the BaxSr1−xTiO3 layer. Maximum values of the permittivity of the BaxSr1−xTiO3 layers were observed around the Curie temperatures of corresponding bulk monocrystals. The dielectric permittivity of the BaxSr1−xTiO3 (x=0.25–0.75) layers depended strongly (≈20%) on an applied voltage (±2.5 V) at temperatures around 77 K. The tan δ was much higher in films than in bulk crystals. © 1995 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1654-1657 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-current-density Josephson junctions have been produced in high-temperature superconducting YBa2Cu3O7−δ films deposited on silicon on sapphire and using biepitaxial grain boundaries. The technique is estimated to be useful in integrating superconducting and semiconducting components. A multilayer system of epitaxially grown films was used to form the junctions. A double buffer layer CeO2/ZrO2(9.5% Y2O3) prevented interactions between YBa2Cu3O7−δ and Si during the high-temperature deposition and promoted formation microcrack-free films with a critical current density of 2×106 A/cm2 at 77 K. A MgO seed layer, with (001)MgO(parallel)(001)CeO2 orientation, was used to induce a 45° crystallographic grain boundary in YBa2Cu3O7−δ at its edge. An additional epitaxial buffer double layer of YBa2Cu3O7−δ and SrTiO3 on top of the seed layer promoted the formation of a grain boundary of better crystallinity and stoichiometry. It improved the critical current of the junction about tenfold and resulted in characteristic IcRn products of 150 μV at 77 K in microbridges crossing the grain boundary. Microwave-induced steps were detected at 77 K up to voltages corresponding to the characteristic IcRn value. Peak-to-peak responses to superconducting quantum interference devices reached values of 7 μV at 77 K. © 1995 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7543-7548 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality epitaxial YBa2Cu3O7−δ (YBCO) thin films were achieved by a modified off-axis sputtering technique with high deposition rates (3.3 nm/min). The film quality and the deposition rate depended crucially on the target-to-substrate separation. Epitaxial YBCO/NdGaO3(NGO)/YBCO trilayers were successfully grown onto SrTiO3, Y-ZrO2, and LaAlO3 substrates by dc and rf sputtering. The epitaxial relations were found to be [001]YBCO//[001]NGO, [100]YBCO, or [010]YBCO//[110]NGO and [001]YBCO//[110]NGO, [100]YBCO, or [010]YBCO//[001]NGO, where the latter orientation relationship was dominating. Subsequent top YBCO layers grew c axis oriented independently of the two epitaxial orientations of the NGO. The orientation relationships between YBCO and NGO were the same. Auger electron depth profiles and transmission electron microscopy indicated that the interdiffusion at the interface between the YBCO and NGO layers was not strong even at 740 °C. The superconducting transition temperatures of the top and bottom YBCO layers were about the same as that of YBCO single layers, i.e., 87–90 K. Scanning electron microscopy of the surface morphologies of the YBCO and the NGO showed that a smaller substrate-target distance resulted in smoother films.
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