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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 1676-1686 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: In this paper, new experimental results using UV spectroscopy of the small benzene–Arn clusters are presented. We have found evidence for the vibrational predissociation of the S1 state of some of these species on a nanosecond time scale and we propose a new assignment for the UV spectral features of this system. This assignment is consistent with other experimental data and it accounts additionally for the previously reported spectral anomalies, in particular the ionization potential measurements of these species. The two-color R2PI spectra performed can thus be considered as nanosecond pump–probe experiments that allow us to estimate the relaxation rate of the S1state of these clusters. The vibrational relaxation is found to be strongly size and structure dependent: The two isomers [(1/1) and (2/0)] of the n=2 species exhibit different lifetimes differing by at least one order of magnitude. The size dependence of the relaxation process within the one-sided isomer series appears also paradoxical since the relaxation rates of the (3/0) and (4/0) species are found to be smaller than that of the (2/0). These properties are discussed in relationship with the symmetry of these species. © 1997 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 1020-1028 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have made a series of isotropic pressure-densified atactic poly(methyl methacrylate) (PMMA) glasses with densities ranging from 1.1823 g/cm3 to 1.1963 g/cm3, in order to investigate how the glassy dynamics, measured by Raman scattering in the frequency range of 0.1–10 THz, depends on the thermomechanical history of the glasses. In particular, we investigate whether there is a correlation between the strength of the fast relaxation dynamics and the free-volume characteristics, such as the average free-volume size and the free-volume fraction. The fast relaxation strength is deduced from the quasielastic light scattering (QES) intensity; the free-volume size is measured with positron annihilation lifetime spectroscopy (PALS); and the free-volume fraction is determined from pressure–volume–temperature (PVT) data and the Simha–Somcynsky equation-of-state (EOS) theory. Our temperature-dependent Raman and PALS measurements show that both the QES intensity and the ortho-positronium (o-Ps) lifetime increase smoothly with the temperature. On the other hand, the relaxation strength of the densified glasses at room temperature is, within experimental error, independent of the density, whereas both the o-Ps lifetime from PALS and the free volume fraction from the PVT data decrease significantly with pressure densification. We therefore conclude that the fast relaxation intensity cannot be explained on the basis of free-volume quantities, contrary to a recently suggested correlation between the QES intensity and the free volume [V. N. Novikov et al., J. Chem. Phys. 107, 1057 (1997)]. On the other hand, the observed behavior is consistent with another recently suggested model [V. N. Novikov, Phys. Rev. B 58, 8367 (1998)] which attributes the fast relaxations to vibration anharmonicity. Moreover, we show that the measured increase in the refractive index of the pressure-densified glasses fits the Lorentz–Lorenz equation and compares well to predictions of the relative change in refractive index with formation pressure from our own as well as published PVT data. © 2000 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 211-218 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report measurements of the absolute cross sections for the electron-impact ionization of SO2 from threshold to 200 eV. Absolute cross sections for the formation of the SO+2 parent ions and of the SO+, S+, O+, and O+2 fragment ions were obtained independently in two different laboratories using two different experimental techniques with uncertainties ranging from ±18% to ±25%. The level of agreement between the absolute cross sections (at 70 eV) obtained by the two techniques ranges from about 10% for SO+2 and SO+ to 20% for (S++O+2) and O+, which in all cases is well within the combined error margins of the two measurements. The high resolution capability of the mass spectrometer employed in one experiment enabled the separation of the S+ and O+2 fragment ions, which are separated by only 0.017 76 atomic mass units (amu), for the first time. The single positive ion formation is the dominant process for all observed product ions. The total single SO2 ionization cross section obtained by the two techniques agreed to within 8%. A comparison of the experimentally determined total SO2 single ionization cross sections with calculated cross sections based on a modified additivity rule revealed agreement to within 20%. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 3866-3871 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In the present work, we describe a new Kelvin probe for dynamical work function change (ΔΦ) measurements in ultrahigh vacuum. The construction of the Kelvin probe is especially optimized to meet the experimental conditions for gas-adsorption experiments as well as for in situfilm growth investigations during metal deposition. This is realized by a new setup which enables a change of the geometrical orientation of the vibrating reference electrode with respect to the sample surface. The Kelvin probe combined with thermal desorption spectroscopy, Auger electron spectroscopy, and scanning tunneling microscopy facilities, forms a powerful tool for film growth analysis. The performance of the instrumentation is demonstrated with some representative test experiments for copper deposition on Pt(111). © 1997 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2469-2472 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of EL2 midgap trap in GaAs using deep-level transient spectroscopy (DLTS) is reported for contacts having a large range of Schottky barrier height. The results show that the DLTS signal of EL2 increases as the barrier height rises from 0.62 eV and saturates for barrier height above 0.83 eV. It is found, for the first time, that for Schottky barrier height lower than 0.62 eV the EL2 signal disappears. A model for calculation of the quasi-Fermi level in the depletion region is used to explain the variation and disappearance of the EL2 signal. This model may also apply to other electron traps near midgap.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4082-4084 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical contact resistivities of both Al and Cu single layer contacts as well as Cu/Au and Al/Au bilayer metal contacts to YBa2Cu3O7−x (YBCO) thin film have been studied. It was found that aluminum and copper make poor electrical contacts to YBCO due to interface reactions. These contacts have large contact resistivity (10−1–1 Ω cm2), orders of magnitude higher than that of a gold/YBCO contact (10−6 Ω cm2). When an ultrathin Au interlayer (10–30 A(ring)) was inserted between an Al or Cu overlayer and a YBCO film, interface reaction was greatly reduced. The contact resistivities of Al/Au and Cu/Au bilayer-metal contacts dropped by five orders of magnitude when Au interlayer thickness was increased from 0 to 10 A(ring). With the gold interlayer thickness of 15 A(ring), the Al/Au and Cu/Au bilayer-metal contacts reached a minimum contact resistivity, approaching that of a thick single-layer Au metal contact.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4211-4216 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Analytical and numerical calculations of threshold behavior and electro-optical characteristics in twisted chiral nematic layers are presented, when weak anchoring in the tilt and twist angle of the director is assumed. An analytical expression for the effective twist angle and the Fréedericksz threshold voltage is derived. In cells with bistabilities, we investigate the influence of the anchoring parameters and device parameters on the width of the hysteresis. Using the 4×4-matrix formalism of Berreman [J. Opt. Soc. Am. 62, 502 (1972)], we demonstrate the influence of the weak anchoring on the transmission-versus-voltage characteristic.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8417-8419 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The alloy system Six(SnyC1−y)1−x was investigated. The purpose is to form material with reduced strain at silicon heterojunctions. In this work, samples were prepared by coimplantation of tin and carbon ions into silicon wafers within the dosage range 1015–1016 cm−2, followed by rapid thermal annealing. Rutherford backscattering and channeling, Auger sputter profiling, and secondary-ion-mass spectrometry were employed to study the crystallinity, chemical composition, and depth profiles. A near-perfect crystallinity for 0.5 at. % of tin and carbon was achieved. For high-dose implanted samples, tin segregation was observed. This work demonstrates promising features of group-IV semiconductor synthesis by ion implantation.
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 84 (1986), S. 1057-1058 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 1170-1177 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We measured absolute partial cross sections for the formation of various singly charged and doubly charged positive ions produced by electron impact on SiF4 from threshold to 900 eV using a time-of-flight mass spectrometer. Dissociative ionization was found to be the dominant process, although we found evidence of the presence of the SiF4+ parent ion in our experiment. The SiF3+ fragment ion has the largest partial ionization cross section with a maximum value of 4.3×10−16 cm2 at 90 eV. All other singly charged fragment ion cross sections are about one order of magnitude smaller at this impact energy. The cross-section values of the doubly charged ions with the exception of SiF2++ are about two orders of magnitude smaller. A comparison is made with available previously measured data. Additional measurements using a sector-field mass spectrometer revealed that all fragment ions are formed with excess kinetic energy. The experimentally determined total single ionization cross section of SiF4 is compared with results of semiempirical and semiclassical calculations and reasonable agreement is found. © 2001 American Institute of Physics.
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