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  • 1
    Publication Date: 2019-10-07
    Description: MEMS-based micro speakers are attractive candidates as sound transducers for smart devices, particularly wearables and hearables. For such devices, high sound pressure levels, low harmonic distortion and low power consumption are required for industrial, consumer and medical applications. The ability to integrate with microelectronic circuitry, as well as scalable batch production to enable low unit costs, are the key factors benchmarking a technology. The Nanoscopic Electrostatic Drive based, novel micro speaker concept presented in this work essentially comprises in-plane, electrostatic bending actuators, and uses the chip volume rather than the its surface for sound generation. We describe the principle, design, fabrication, and first characterization results. Various design options and governing equations are given and discussed. In a standard acoustical test setup (ear simulator), a MEMS micro speaker generated a sound pressure level of 69 dB at 500 Hz with a total harmonic distortion of 4.4%, thus proving the concept. Further potential on sound pressure as well as linearity improvement is outlined. We expect that the described methods can be used to enhance and design other MEMS devices and foster modeling and simulation approaches.
    Print ISSN: 2096-1030
    Electronic ISSN: 2055-7434
    Topics: Electrical Engineering, Measurement and Control Technology , Energy, Environment Protection, Nuclear Power Engineering , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by Springer Nature
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  • 2
    Publication Date: 2016-09-14
    Print ISSN: 0028-0836
    Electronic ISSN: 1476-4687
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Published by Springer Nature
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  • 3
    Publication Date: 2016-11-16
    Print ISSN: 0028-0836
    Electronic ISSN: 1476-4687
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Published by Springer Nature
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2626-2628 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An averaging procedure is applied to inelastic acoustic–phonon scattering which leads to lattice-temperature-dependent constants for the phonon energy and the square of the phonon wave vector. The resulting scattering rate depends on energy only thus facilitating the search of after-scattering states in full-band Monte Carlo simulations. The model still accurately reproduces the velocity–field characteristics over a wide range of lattice temperatures, but in silicon the hot-hole tail of the energy distribution is strongly enhanced compared with the elastic equipartition approximation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 456-458 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The tunnel-assisted recombination current of a thin GaAs pn junction delta doped with Ti deep-level defects is modeled by 1D device simulation using a generalized Shockley–Read–Hall rate. The tunneling between band states and multiphonon sublevels of the recombination center, and the Poole–Frenkel effect are studied, varying the position of the delta–doped sheet and the junction width. Both field effects decisively influence the calculated current-voltage characteristics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 2177-2187 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Coherent anti-Stokes–Raman scattering (CARS)-excitation profiles (CEPs) of the fundamental vibrational mode of I2 dissolved in cyclohexane and dibromomethane are determined with excitation wave numbers ranging from 17 000 to 23 000 cm−1. The experiments were performed at room temperature and with laser beams polarized parallel to each other. Calculations were performed for both the absorption spectrum and the CEPs of iodine in both solvents and compared with experimental results. Good qualitative agreement of the major features of the CEPs was found using gas phase potentials for the excited states 1Π1u and 3Π0+u and the ground state 1Σ+g. The excited state potential functions were slightly shifted to match the measured absorption spectra. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 2509-2516 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The vibrational infrared and Raman spectra of a series of t-butyl substituted oligomers of para-phenylenevinylene and of the corresponding polymer in the pristine and potassium-doped states have been recorded for the first time and interpreted on the basis of the theory of the effective conjugation coordinate. The Raman spectra of selectively deuteriated materials have also been analyzed. Evidence is found of strong phonon confinement. The information derived from the spectra is that the charge carrier is confined over a few monomer units and that when the polymer is doped with electron donors the benzene ring is preferentially perturbed. The data collected in this work are compared with the results from UV spectroscopy and ESR experiments which indicate a larger dimension of the charge carrier. The information which can be derived by using in a complementary way the data from these spectroscopies are presented and discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 2392-2400 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Benzene and (1,4)-dimethyl-cyclohexane monolayers were physisorbed on graphite covered Pt(111) surfaces. Exposure of benzene monolayers at 125 K to D atoms (1700 K) initially hydrogenates sp2 hybridized C atoms with a cross section of ca. 8 A(ring)2 producing C6H6D intermediates. Additional D atom reactions either transform this intermediate via a second hydrogenation reaction to cyclohexadiene-d2, C6H6D2, or restore benzene, C6H5D, via H abstraction. Once the aromaticity is broken, successive hydrogenation of the diene occurs rapidly generating the saturated cyclohexane-d6, C6H6D6. The C6H5D reaction product can undergo further H/D exchange reactions and, at any level of deuteration, the benzene species might get hydrogenated. Monolayers of the saturated hydrocarbon (1,4)-dimethyl-cyclohexane (DMCH) that are exposed to D atoms produce deuterated DMCH via successive abstraction/hydrogenation reactions. Thermal desorption mass spectra revealed that H atoms at the ring were exchanged with an apparent cross section of 1.7 A(ring)2. Methyl groups H atoms were exchanged much more slowly than ring H atoms. It was also observed that D exposed molecules/radicals exhibit a tendency to desorb from the surface, which is ascribed to the exothermicity of the reactions which lead to these species. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 814-831 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical bulk mobility model for hydrodynamic transport equations is developed from a microscopic level and designed for silicon device simulation. Applying Kohler's variational method extended to the regime of nonlinear transport yields the general expression for the mobility as function of carrier temperature, lattice temperature, and doping. Assuming a nonparabolic, isotropic band model and a heated Maxwellian allows for the analytical calculation of the collision integrals. A nonelastic approximation for intravalley acoustic-phonon scattering is proposed, which improves the model in the low-temperature range. Intervalley scattering is treated in a one-mode, equipartition approximation. Here, an accurate analytical approach for all carrier temperatures is derived. For impurity scattering the Brooks-Herring theory is used including Fermi statistics and the effect of dispersive screening. The influence of other effects like anisotropic valleys and perturbation of the density of states by heavy doping are discussed quantitatively. Despite the oversimplified band structure, all essential features of the measured mobility in silicon can be reproduced except in the heavy doping range. The adjusted deformation potentials coincide with estimated sums of the corresponding sets used in full-band Monte Carlo simulation. The method has the potential of an extension to the Si−SiO2 system. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8704-8711 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In zinc-blende II–VI alloys the thermal-expansion coefficient for low temperatures is negative and becomes positive at higher temperatures. We investigated the luminescence properties of molecular-beam-epitaxy-grown (CdMnMg)Te layers in the temperature range from 2 up to 200 K and show that the anomalous temperature dependence of the lattice constant is reflected in the luminescence properties of the excitonic recombination and the internal transition of manganese (ITM). The temperature behavior of the ITM energy is nonmonotonic and the existence of a minimum in the photon energy (at the temperature TMn) can be correlated to the change of sign of the thermal-expansion coefficient. The decay constants of the ITM begins to decrease drastically at TMn, too. Considering a lattice constant dependent energy transfer rate to the infrared emitting state (1.2 eV) of the manganese ion the variation of the lifetimes can also be explained by the temperature dependence of the lattice constant. Furthermore, we have measured the ITM in bulk layers and observed a different dependence of the ITM properties on the temperature, demonstrating the influence of the growing conditions on the microscopic surrounding of the manganese ions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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