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  • 1
    Electronic Resource
    Electronic Resource
    Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates (1997)
    Springer
    Semiconductors 31 (1997), S. 232-236 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract This paper discusses how the processing parameters affect the structural perfection of epitaxial layers of 3C-SiC grown on 6H-SiC substrates by vacuum sublimation. It shows that, at constant temperature and using virtually undisoriented substrates, decreasing the growth rate increases the size of the twinning regions in the films and reduces the total defect concentration of the 3C/6H structures. Epitaxial layers of 3C-SiC with a defect density of 101–102 cm−2 and a twinning area of up to 6 mm2 have been obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187112
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  • 2
    Electronic Resource
    Electronic Resource
    Wide-gap semiconductors for high-power electronics (1999)
    Springer
    Semiconductors 33 (1999), S. 999-1001 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The latest results obtained in the development of high-power devices based on wide-gap semiconductors are examined. It is shown that at present silicon carbide remains the most promising material for high-temperature, radiation-resistant, high-power electronics. Certain factors involving a wide commercial adoption of SiC-based devices are examined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187823
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  • 3
    Electronic Resource
    Electronic Resource
    Reflection and transmission characterization of a hexagonal photonic crystal in the mid infrared (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5061-5064 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication of a hexagonal photonic crystal of air cylinders in silicon and its characterization in the mid infrared. The structure was obtained in electrochemically etched macroporous silicon. Simultaneous reflection and transmission measurements were undertaken for the two main crystal orientations and two polarizations. The first four orders of photonic band gaps were identified by transmission attenuations and reflection peaks. A complete photonic band gap was observed at 5.8 μm, in good agreement with numerical calculations. The measured reflection characteristics of the crystal demonstrate the application possibilities of photonic crystals. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367401
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  • 4
    Electronic Resource
    Electronic Resource
    Metal–n-6H–SiC surface barrier height—Experimental data and description in the traditional terms (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5511-5514 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work compares our experimental data on surface barrier height in structures metal–n-6H–SiC for several metals (Al, Au, Mo, Cr) with other data available and with classical models of surface barrier formation. We observed decreasing of barrier height with increasing of donors concentration for the structures Au–n-6H–SiC, Mo–n-6H–SiC and Al–n-6H–SiC. We estimate the average surface energy level for (0001)-Si-faced n-6H–SiC, appearing in capacitance–voltage (C–V) measurements, to be about 0.3Eg at room temperature (Eg is the energy band gap) and corresponding surface states density to be about 1013 cm−2 eV−1, based both on our data and data of other authors. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359668
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  • 5
    Electronic Resource
    Electronic Resource
    Submicrometer resolution Yablonovite templates fabricated by x-ray lithography (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 770-772 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fabrication and optical characterization of diamond-like photonic structures with 1.3 μm lattice constants. In analogy with the first Yablonovite obtained by a mechanical drilling of a dielectric material, the structures are fabricated in poly(methylmethacrylate) resist using three consecutive exposures to an x-ray beam through a triangular lattice of holes. Up to six crystal periods are obtained in a 6.2-μm-thick resist. The measured reflection and transmission spectra show well contrasted photonic gaps in agreement with numerical simulations. This demonstrates the good optical quality of the structures that can be used as porous templates for transferring the diamond-like pattern to high-refractive-index dielectrics or metals. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1306646
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  • 6
    Electronic Resource
    Electronic Resource
    Near-infrared Yablonovite-like photonic crystals by focused-ion-beam etching of macroporous silicon (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2943-2945 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication of three-dimensional (3D) Yablonovite-like photonic crystals by focused-ion-beam (FIB) etching of macroporous silicon. Crystals containing up to 25×25×5 lattice cells are fabricated with a submicronic period of ∼0.75 μm. Photonic band gaps at wavelengths close to 3 μm are demonstrated from reflection measurements and confirmed by numerical calculations. The combination of plasma or chemical etching with FIB micromachining appears to be promising for the fabrication of a large variety of multiple-period 3D photonic crystals at optical wavelengths. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1322630
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of boron diffusion on the high-voltage behavior of 6H-SiC p+nn+ structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5464-5468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron diffusion can be used to compensate the n-type layer of a p+nn+ 6H-silicon carbide structure in order to increase its high-voltage capabilities. Measurements under reverse biases for a current range from 10 to 500 μA show that this process is very efficient for working temperatures about 300 K. Indeed we obtained a voltage of 670 V for a reverse current of 10 μA instead of the 120 V calculated for a structure without boron diffusion. Nevertheless, the breakdown voltage decreases rapidly when the temperature increases. Capacitance measurements show that the measured doping level in the n-type layer evolves in the same way as the temperature (it ranges from 1013 cm−3 at 300 K to 1017 cm−3 at 500 K). A great concentration of boron seems to be responsible for this doping variation with temperature. Admittance spectroscopy reveals the presence of D centers at 0.62 eV above the valence band associated to boron at concentration similar or superior to nitrogen concentration in the n-type layer. The increase of the doping level with the temperature is responsible for this decrease of the breakdown voltage. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362736
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  • 8
    Electronic Resource
    Electronic Resource
    Experimental demonstration of complete photonic band gap in graphite structure (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1780-1782 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We experimentally demonstrate the existence of complete photonic band gap in graphite-type photonic crystals, thereby confirming theoretical predictions reported in previous studies. Experiments are performed at microwave frequencies from 27 to 75 GHz using hexagonal lattices of alumina rods. Transmission spectra measured for E (TM) and H (TE) polarizations and for different orientations of the two-dimensional lattice are found to be in excellent agreement with numerical calculations. The complete photonic band gap results from the overlap of E7 and H5 forbidden bands. Attenuations larger than 30 dB are measured for structures comprised of only four rows of alumina rods. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119396
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  • 9
    Electronic Resource
    Electronic Resource
    Passive mode locking of a multistripe single quantum well GaAs laser diode with an intracavity saturable absorber (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1526-1528 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A multistripe, single quantum well GaAs laser diode is passively mode locked without an external cavity. The intracavity saturable absorber is formed by ion implantation of the laser diode's facet. The dose and energy of implanted ions were adjusted to achieve mode locking. This monolithically integrated laser diode and saturable absorber generates 40 GHz optical pulses with a pulse width of 5 ps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106271
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  • 10
    Electronic Resource
    Electronic Resource
    Narrow-linewidth operation of broad-stripe single quantum well laser diodes in a grazing incidence external cavity (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2977-2979 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An external-cavity semiconductor laser employing a grazing-incidence grating and 100-μm stripe gain-guided laser diodes is described. The laser oscillates in a single axial and spatial mode at currents below the free-running threshold of the diode. A maximum single-frequency power of 30 mW is obtained. The lasing wavelength is tunable over 300 A(ring). At higher drive currents, the output contains multiple axial and spatial modes, with a linewidth of 4 GHz. The maximum continuous output power is 230 mW.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106782
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