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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1178-1179 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous silicon/silicon-carbide double barrier structure with 2.66 peak to valley ratio single negative resistance and 1.146/1.174 double negative resistance under room temperature are studied. Theoretical analysis and experimental investigation employed to raise peak to valley current ratio and to obtain multiple negative resistances current-voltage curve are also included.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 3975-3983 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The temperature dependence of infrared absorption spectra of CH and CD on diamond nanocrystal surfaces has been investigated. Phase relaxation was closely examined by analyzing frequency shifts and line broadening in the spectra. Based on the model of Persson and Ryberg [Phys. Rev. B 40, 10 273 (1989)], coupling phonons responsible for the pure dephasing process were found to resonate at ω0≈1200 cm−1 for the CH stretch. By including both the phase and energy relaxation in the linewidth analysis and assuming that energy relaxes via three-phonon emission, we estimate a pure dephasing time of T*2≈340 ps at room temperature. This value is one order of magnitude larger than the energy relaxation time, T1≈19 ps, measured by Chin et al. [Europhys. Lett. 30, 399 (1995)] on a C(111) single crystal surface. We interpret the anomalous observation to be the result of the high frequency of the coupling phonons. For the CD stretches, however, severe line broadening due to exceedingly rapid energy relaxation disallows accurate determination of T*2. Since CH and CD stretches have similar thermal and inhomogeneous broadening characteristics, the lifetime of the latter is estimated to be T1≈220 fs. This T1 value is one of the shortest vibrational energy relaxation times for any adsorbate on a dielectric surface. Systematic comparison of these anomalous results with the measurements of SiH stretches on Si(100) and Si(111) is given. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 4180-4183 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present here the design of a novel and simple setup for measuring the thermal conductivity of thin films. This method is based on the well known principle of phase lag of a traveling thermal wave. In the present setup, the traveling thermal wave is generated in the thin film by irradiating its one edge by an infrared laser. The phase lag (Δθ) between the excitation wave and the resulting thermal wave, at a variable distance d from the edge of the sample, is determined by measuring the deflection of another "probe-laser." The thermal diffusivity is then directly calculated from the slope of the plot between Δθ and d. This method offers an accuracy of better than ±5%. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4944-4955 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic analysis of the unhydrogenated amorphous carbon nitride (a-CNx) films, prepared by ion beam sputtering, was done by ellipsometry, Raman scattering and x-ray photoelectron spectroscopic (XPS) studies. The optical gap of the films was estimated from the Tauc's analysis of the (n,k) data obtained from spectroscopic ellipsometry. In addition to the commonly observed D and G bands at ∼1350 cm−1 and 1550 cm−1, respectively, we detected a separate band at ∼1450 cm−1 in the Raman spectrum of a-CNx films. This intermediate peak was unambiguously identified as the N band arising out of the nitrogen–nitrogen bonding, due to the incorporation of nitrogen in the a-C network. High resolution XPS C 1s and N 1s peaks were used to estimate the nitrogen content in the films and various bonding configurations were identified from their Gaussian deconvolution. An increase in the intensity ratio of CN and CC components, I(CN)/I(CC), in the C 1s spectra signified increasing nitrogenation of the carbon network. Deconvolution of the N 1s spectra revealed that the sp3-hybridized C(Single Bond)N component remained unchanged at ∼40%, however, the sp1-hybridized C(Triple Bond)N component increased in intensity when the nitrogen content in the network increased systematically. Increasing nitrogenation led to the graphitization of the network and resulted in a gradual decrease in the optical gap, along with simultaneous increase in the ID/IG and IN/IG intensity ratios in the Raman band. © 2002 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1850-1852 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gate turn off capability of a trench insulated gate metal/amorphous silicon (a-Si:H)/crystalline silicon (c-Si) (p-n) heterojunction switching device is studied. Using a negative gate voltage to modulate the depletion width in the a-Si:H region, and hence lowering the field for the multiplication of carriers, the heterojunction switching device can be gate turned off or even gate locked. Thus the device can be developed as a gate controllable light switch or light sensor.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2815-2817 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of negative differential resistance in an amorphous silicon and silicon–carbide single-barrier device have been experimentally observed at room temperature. Based on the calculated and measured results, the barrier thickness is the important factor in determining the current–voltage characteristics of this device. In addition, the effective mass and the series resistance of amorphous materials are larger than that of crystalline materials. Thus the behavior of negative differential resistance of an amorphous silicon single-barrier device would be different from that of single-crystalline devices. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 177-179 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel amorphous silicon doping superlattice device with bidirectional S-shaped negative-differential characteristics has been fabricated and investigated experimentally. The occurrence of the S-shaped switching phenomenon is caused by the potential redistribution due to the avalanche multiplication process. The experimental results are demonstrated and the electronic transport theory is proposed in this letter.
    Type of Medium: Electronic Resource
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  • 8
    Publication Date: 2016-01-08
    Description: It is hoped that through the cultivation of a crew of volunteer citizen seismologists, public involvement could be encouraged and the discovery and inquiry into earthquake knowledge could be promoted. These volunteers can contribute to data collection, analysis, and reporting, and have the potential to greatly improve the emergency response to earthquakes. The Citizen Seismologists in Taiwan Project (CSTaiwan) is designed to elevate the quality of earthquake science education by incorporating earthquake and tsunami stories and educational earthquake games into traditional school curricula. The project aims to build a cloud-based computing service incorporating an earthquake school (i.e., a website for online learning) where teachers can easily teach their students about earthquakes and children can learn about earthquakes in a fun environment. Here we demonstrate how students perform P - and S -wave picking and measure seismic intensity through an interactive learning platform, how scientists and school teachers work together, and how we create a near-real-time earthquake games competition to facilitate continuous learning while making earthquake science fun. We also develop 49 questions associated with participants’ preknowledge, attitude, and skills in earthquake sciences, called Citizen Seismological Literacy (CSL). The CSL model may serve as an example to quantify citizen’s background in earthquake sciences and could be applied as a framework for seismologists around the world who wish to approach the public for educational purposes, while considering promoting the public’s seismologic literacy.
    Print ISSN: 0895-0695
    Electronic ISSN: 1938-2057
    Topics: Geosciences
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