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  • 1
    Electronic Resource
    Electronic Resource
    Layer by layer removal of Au atoms from passivated Au(111) surfaces using the scanning tunneling microscope: Nanoscale "paint stripping" (2002)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 116 (2002), S. 7151-7157 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Layer by layer removal of gold atoms from the (111) surface of gold has been performed using the scanning tunneling microscope. The process is made possible by a chemisorbed self-assembled monolayer (SAM) of dodecanethiol molecules on the surface, which gives rise to a reduced bonding strength between the top two layers of gold atoms. The gold atoms and associated adsorbed molecules are peeled off and displaced laterally by the STM tip, and the size of the modified area (down to ∼10×10 nm) is more or less determined by the scan size. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1464816
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  • 2
    Electronic Resource
    Electronic Resource
    Temperature dependence of exchange field in exchange-spring magnets (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 8351-8353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pr8Fe88B4 ribbons prepared by melt spinning have been investigated by x-ray diffraction, differential thermal analysis, thermomagnetic analysis, atom force microscopy, and superconducting quantum interface device magnetometer. The results show that the annealed ribbons consist of the Pr2Fe14B and α-Fe phases. The magnetization of soft α-Fe phase remains parallel to the magnetization of the hard Pr2Fe14B phase for fields less than the exchange field (Hex). The exchange field in exchange-spring magnets, determined from the demagnetization curves measured at various temperatures, increases with decreasing grain size and measure temperature. The temperature dependence of exchange field was analyzed qualitatively by the expression Hex=(AK)1/2/(Mst). © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368159
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of Mo concentration on the phase composition and magnetic properties of Nd8(Fe,Mo)86B6 nanocomposite magnets (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7336-7339 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase composition and magnetic properties of Nd8Fe86−xMoxB6 (x=0, 1, 2, and 3) nanocomposite magnets prepared by melt spinning have been investigated by x-ray powder diffraction, transmission electron microscopy, thermomagnetic analysis, and vibrating sample magnetometer measurements. The optimal ribbons were found to be mainly composed of the α-Fe phase and the Nd2Fe14B phase. The average crystalline size of α-Fe is 14–18 nm. In the optimally quenched samples, the α-Fe phase content decreases with increasing Mo content; at the same time, an increase of coercivity and a decrease of energy products are observed. The hysteresis loops of the optimal ribbons show a single-phase hard magnetic behavior. The reduced remanence ratio is always above 0.66. The remanence enhancement is due to the exchange coupling between the soft and hard magnetic phases in these ribbons. The Curie temperature of the Nd2Fe14B phase in the samples decreases with increasing Mo content. The optimal hard magnetic properties of remanence, coercivity, reduced remanence, and maximum energy product are 120 emu/g, 4.5 kOe, and 0.75 and 135 kJ/m3, respectively, for Nd8Fe86B6. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369358
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  • 4
    Electronic Resource
    Electronic Resource
    Studies of metal–ferroelectric–GaN structures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2416-2417 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaN-based metal–insulator–semiconductor (MIS) structure has been fabricated by using ferroelectric Pb(Zr0.53Ti0.47)O3 instead of conventional oxides as insulator gate. Because of the polarization field provided by ferroelectric and the high dielectric constant of ferroelectric insulator, the capacitance–voltage characteristics of GaN-based metal–ferroelectric–semiconductor (MFS) structures are markedly improved compared to those of other previously studied GaN MIS structures. The GaN active layer in MFS structures can reach inversion just under the bias of smaller than 5 V, which is the generally applied voltage used in semiconductor-based integrated circuits. The surface carrier concentration of the GaN layer in the MFS structure is decreased by one order compared with the background carrier concentration. The GaN MFS structures look promising for the practical application of GaN-based field effect transistors. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125032
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  • 5
    Electronic Resource
    Electronic Resource
    Drift mobility of semiconductive La0.5Sr0.5CoO3 films measured using the traveling wave method (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 580-582 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conductivity and the drift mobility of La0.5Sr0.5CoO3 films deposited on fused silica substrates at 650 °C by pulsed-laser deposition have been measured by using the traveling-wave method. At room temperature, La0.5Sr0.5CoO3 films with semiconductivity have a hole density of 1×1021 cm−3, and drift mobility of 0.01 cm2/V s. The films underwent a paraferromagnetic transition around 240 K. The hopping process and tunneling effect of small polarons may be responsible for the conductive behavior above the Curie temperature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125823
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  • 6
    Electronic Resource
    Electronic Resource
    Enhanced fatigue and retention properties of Pb(Ta0.05Zr0.48Ti0.47)O3 films using La0.25Sr0.75CoO3 top and bottom electrodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3698-3700 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric perovskite Pb(Ta0.05Zr0.48Ti0.47)O3 thin-film capacitors having LaxSr1−xCoO3 bottom and top electrodes have been prepared on Pt/TiO2/SiO2/Si(001) substrates by pulsed-laser deposition. It is found that La0.25Sr0.75CoO3 bottom electrodes with cubic structure strongly promote the formation of (001) texture of PTZT films and improve the fatigue and retention properties of the capacitors. The polarization of the La0.25Sr0.75CoO3/Pb(Ta0.05Zr0.48Ti0.47)O3/La0.25Sr0.75CoO3 capacitors with a Pb(Ta0.05Zr0.48Ti0.47)O3 thickness of 400 nm were subjected to no degradation after 1×1010 switching cycles at an applied voltage 5 V with a frequency of 1 MHz. The capacitor retains more than 92.6% of its polarization after a retention time up to 105 s. The possible microstructural background responsible for the excellent fatigue and retention properties was discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125433
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  • 7
    Electronic Resource
    Electronic Resource
    Completely 〈111〉-textured growth and enhanced ferroelectric properties of Pb(Ta0.05Zr0.48Ti0.47)O3 films on Pt/TiO2/SiO2/Si(001) using SrRuO3 buffer layer (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3396-3398 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Completely 〈111〉-textured Pb(Ta0.05Zr0.48Ti0.47)O3 (PTZT) films are grown on Pt/TiO2/SiO2/Si(001) substrates by pulsed-laser deposition using SrRuO3 as a buffer layer. It is argued that the small lattice-mismatch in (111) plane between Pt and SrRuO3 and the compatible perovskite structures for SrRuO3 and PTZT are responsible for the complete (111) orientation of PTZT films. The as-fabricated PTZT ferroelectric capacitor exhibits large remnant polarizations +Pr=18.4 μC/cm2, and −Pr=−16.0 μC/cm2, and very low leakage current as well. The excellent fatigue-resisting property of PTZT films in terms of the polarization degradation is demonstrated. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125305
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  • 8
    Electronic Resource
    Electronic Resource
    Plasmon energy shift in mesoporous and double length-scale ordered nanoporous silica (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2629-2631 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron energy-loss spectroscopy studies are reported on three different types of structures: solid silica spheres, mesoporous silica, and the double length-scale ordered (DLSO) porous silica. The mesoporous silica has porosity at the length scale of nanometers. The DLSO porous silica has an additional ordering on submicron hollows created by the template polystyrene spheres. The plasmon energy of the porous silica shows a significant shift in comparison to that of the bulk, suggesting that the local density of the bound electrons in the porous structures is lower than that in the bulk. This gives the possibility of tuning the electronic structure of silica by varying its porosity, leading to even lower dielectric loss. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123919
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  • 9
    Electronic Resource
    Electronic Resource
    Studies of Mn valence conversion and oxygen vacancies in La1−xCaxMnO3−y using electron energy-loss spectroscopy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3362-3364 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the white line intensities, electron energy-loss spectroscopy in a transmission electron microscope has been employed to characterize the valence conversion and oxygen vacancies in La1−xCaxMnO3−y. For a nominal doping composition x=0.33, the ratio of Mn4+ to Mn3+ is determined to be more than 0.25 but less than 0.5, and the content of oxygen vacancy y is no more than 0.065 (equivalent to 2.2 at. % of the oxygen content). At ymax=0.065, 60% of the residual charge introduced by Ca doping is balanced by the conversion of Mn3+to Mn4+ and 40% by oxygen vacancy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119171
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  • 10
    Electronic Resource
    Electronic Resource
    High-coercivity Sm2(Fe,Al,Mo)17C1.5 ribbons with addition of Mo (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5585-5587 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of Mo additions on the structure and magnetic properties of Sm2Fe(15.5−x)MoxAl1.5C1.5 alloys have been investigated by means of x-ray diffraction (XRD), scanning electron microscopy, transmission electron microscopy, and magnetic measurements. The XRD analyses show that as-cast alloys consist mainly of a 2/17-type carbide and a considerable amount of α-Fe. Rapidly quenched, the Mo-containing alloys form a nanocrystalline structure with an average grain size of 35–50 nm, while the amount of the α-Fe phase is greatly decreased. The magnetic hardening of the Mo-containing alloys can be achieved by direct quenching. A coercivity exceeding 1.35 T is obtained for the Sm2Fe14.9Mo0.6Al1.5C1.5 ribbon spun at 40 m/s. These results reveal that the addition of Mo is effective in improving the coercivity. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367398
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