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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2438-2444 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new Langmuir-type pendant-drop penetration film balance has been developed combining a Langmuir-type pendant-drop film balance with a new rapid-subphase-exchange technique. In addition to the determination of surface pressure—molecular area isotherms of insoluble monolayers deposited on the surface of a pendant drop, it allows the study of reactions with some surfactant added to the subphase. The monolayer is spread on the surface of a drop suspended from a capillary, which is the outer one of an arrangement of two coaxial capillaries connected to the different branches of a microinjector. Once the film is brought to the desired state of compression by varying the drop volume with the microinjector, the subphase liquid in the drop can be exchanged quantitatively by means of the coaxial capillaries. This exchange is complete for a through-flow of at least three times the drop volume, and the monolayers endure it at all tested film pressures. The determination of surface tension as a function of surface area is performed using axisymmetric drop shape analysis (ADSA). The complete set-up, i.e., the image capturing and microinjector system is fully computer controlled by a user-friendly and fully Windows integrated program, including the ADSA surface tension calculus algorithm. As a penetration film balance, pendant-drop methodologies offer a wide range of advantages such as a more stringent control of the environmental conditions and therefore, more uniform temperature, pressure and concentration along the interface, small amounts of material needed, and a 20 times greater interface/volume ratio than in conventional Langmuir toughs. © 1999 American Institute of Physics.
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  • 2
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The Dscam gene gives rise to thousands of diverse cell surface receptors thought to provide homophilic and heterophilic recognition specificity for neuronal wiring and immune responses. Mutually exclusive splicing allows for the generation of sequence variability in three immunoglobulin ...
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7612-7618 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic hydrogen from plasma discharges dissolves in silicon previously amorphized by ion implantation (aSi) in the form of Si–H bonds, giving rise to infrared (IR) absorption at ∼1990 cm−1 and causing partial activation of implanted dopants. Passivation of aSi does not affect the rate at which the material subsequently undergoes solid phase epitaxy. Exposure giving rise to [H]〉6 at. % causes the appearance of an additional IR absorption band at ∼2080 cm−1 and coloration of the layer. Despite annealing, the Si–H defects, normal solid phase epitaxy does not occur during subsequent heat treatment. The structural modification by H-plasma exposure coincides with etching of the layer. The observations can be understood in terms of void formation in aSi resulting from the clustering of Si–H. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1873-1875 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystalline silicon films were deposited in an electron cyclotron resonance plasma of Ar+H2+SiH4 on (100) and (111) oriented Si substrates without external heating. Before deposition, the substrates were cleaned in situ in an Ar+H2 plasma. This cleaning process caused surface roughness particularly on (100) substrates. Apparently, the excessive roughness of the interface with (100) Si surface prevented complete crystallization of the subsequently deposited films. In contrast, rapid solid phase crystallization of the films deposited on (111) surfaces occurred at around 1000 °C. © 1996 American Institute of Physics.
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  • 5
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] 32P-labelled Grb2-fusion protein8 was used to screen an expression cDNA library constructed from a glial tumour. We focused on one novel 1.6-kilobase (kb) clone. Rescreening of libraries resulted in the isolation of a 4.2-kb transcript which contained a polyadenylation signal and poly(A) tract. ...
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