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  • American Institute of Physics (AIP)  (3,237)
  • MDPI Publishing  (2,515)
  • 1
    Electronic Resource
    Electronic Resource
    Stress-released layer formed by pulsed ruby laser annealing on GaAs-on-Si (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3358-3361 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of short pulsed ruby laser annealing on GaAs layers grown on Si substrates by metalorganic chemical vapor deposition have been characterized by Raman spectroscopy and double-crystal x-ray diffraction. After laser melting and regrowth, the stress-released layer is formed in the near-surface. The formation of the stress-released layer results in the microcracking of the pulsed-laser-annealed GaAs surface. However, the high crystalline quality of this stress-released layer is detected. Furthermore, when GaAs layer is overgrown on this stress-released layer, this layer plays a role of blocking the dislocation threading into the overgrown GaAs layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345374
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  • 2
    Electronic Resource
    Electronic Resource
    Nanocrystalline Nd12Fe80B6Nb1Ga1 melt-spun ribbon with textured surface (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4756-4758 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In Nd-Fe-B melt-spun ribbon, Ga addition is found to be effective for the orientation of c axis of 2-14-1 grains normal to the ribbon plane even at high wheel surface velocity. A Nd12Fe80B6Nb1Ga1 melt-spun ribbon quenched with optimum wheel surface velocity was found to have textured structure on the free-side surface. Furthermore, this melt-spun ribbon was composed of fine grains of about 30 nm in size which is believed to be enough to provoke intergrain exchange interaction. The remanence and energy product of the field aligned powder of this melt-spun ribbon was about 7% and 20% higher than those of the not-aligned powder, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355904
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of 28Si+ and 40Ar+ ion-implanted epitaxial ReSi2 films on an n-Si(100) substrate (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1046-1050 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and electrical characteristics of 300 keV Si+ or 380 keV Ar+ ion-implanted epitaxial ReSi2 films grown on an n-Si(100) substrate have been studied by using 2 MeV 4He+ ion backscattering spectrometry, x-ray diffraction, high-resolution transmission electron microscopy, and electrical measurement. Ion implantation causes static disorder in the film, which overlap and grow to become an amorphous layer. The threshold dose for amorphizing the ReSi2 film is ∼5×1014/cm2 for 28Si+ and ∼1×1014/cm2 for 40Ar+. Although the resistivity of the implanted ReSi2 film decreases when the degree of disorder (or the implantation dose) is increased, the resistivity reaches a minimum value at a dose of ∼1×1015/cm2 for Si+ or ∼5×1014/cm2 for Ar+. The 28Si+-implanted amorphous ReSi2 films recovered original epitaxy after thermal annealing at 700 °C for 30 min in vacuum, as do the partly amorphized ReSi2 films by 40Ar+ implantation. On the other hand, those films fully amorphized by 40Ar+ implantation (dose≥1×1014/cm2) did not recover after thermal annealing, even when exposed to a temperature as high as 1000 °C for 30 min.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354951
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  • 4
    Electronic Resource
    Electronic Resource
    Formation of a large grain sized TiN layer using TiNx, the epitaxial continuity at the Al/TiN interface, and its electromigration endurance in multilayered interconnection (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1719-1724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new technique on the formation of TiN film with large grain size from TiNx is described. The TiNx layer (defined in Sec. II A) was deposited by sputtering in argon and nitrogen. The nitrogen atoms in Ti matrix relaxed the mechanical stress of the deposited film and limited the surface mobility during the deposition process, resulting in a nanocrystalline structure with extremely uniform thickness. After rapid thermal annealing (RTA), the TiNx yielded a bilayer structure of TiN/TiSixOy, in which the TiN showed (111) preferred texture, extremely smooth surface, and large grain size without any columnar structure. In addition, the resistivity of the bilayered TiN was as low as 40 μΩ cm. In the TiN multilayered aluminum structure (i.e., TiN/Al/TiN), epitaxial continuity and the intermetallic compound such as TiAl3 were clearly observed at the aluminum/TiN interface. The multilayered structure showed better endurance against EM in comparison with the same structure using the conventional TiN (also defined in Sec. II A). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360200
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  • 5
    Electronic Resource
    Electronic Resource
    Thermomagnetic analysis of NdFeB melt-spun alloys with low Nd content (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4133-4135 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase transformation of NdFeB melt-spun alloys with low Nd content of 4–8 at. % was investigated by thermomagnetic analysis and x-ray diffractometry. Experimental results have shown that the metastable Nd2Fe23B3 compound formed in the alloys is considered to be transformed to Nd2Fe23B3+α-Fe+Fe3B in the temperature range of 550–690 °C, α-Fe+Fe3B+Nd1+eFe4B4 in the temperature range of 690–730 °C and finally α-Fe+Nd1+eFe4B4 above 840 °C. From the results, it has been concluded that Nd2Fe14B is not formed from metastable Nd2Fe23B3. On the other hand, the melt-spun alloy of Nd2Fe23B3 (∼Nd7.1Fe82.1B10.7) annealed under optimum conditions has been found to be composed of α-Fe, Fe3B, and Nd2Fe14B phases. The alloy has a coercivity comparable to Fe3B-based Nd4Fe77B19 and relatively high-energy product of about 71.6 kJ/m3 (∼9 MG Oe). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359501
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  • 6
    Electronic Resource
    Electronic Resource
    Dependence of the optical properties of p-CdTe and p-Cd0.96Zn0.04Te on the bromine concentration in a bromine-methanol etching solution (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4074-4076 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements were carried out to investigate the dependence of the optical properties of p-CdTe and p-Cd0.96Zn0.04Te on various relative concentrations of bromine in a mixture of methanol and bromine. As the bromine concentration increased, the intensity of the luminescence increased; additionally, an exciton bound to a neutral acceptor (A°X) peak at 1.588 eV in p-CdTe was resolved into an exciton bound to neutral donor (D°X) peak at 1.592 eV and an A°X peak. The mixed bands of the 1.574 and 1.546 eV peaks were well resolved by using an etching bromine concentration of 2%; in particular, the intensities of the D°X and 1.574 eV peaks increased as much as five and seven times, respectively. The intensity of the peak at 1.48 eV related to defects also increased. The intensity of A°X at 1.609 eV in p-Cd0.96Zn0.04Te changed slightly with the bromine concentration. The intensities of the luminescence peaks due to the recombination of the electrons in conduction band with acceptors and to the defect relation did not vary. These results indicated that the number of Cd vacancies could be reduced due to the addition of Zn.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352832
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  • 7
    Electronic Resource
    Electronic Resource
    Defect band behavior in p-Cd0.96Zn0.04Te by hydrogen passivation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4077-4079 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements were carried out in order to investigate the dependence of the optical properties of p-Cd0.96Zn0.04Te single crystals on hydrogen passivation conditions. After the p-Cd0.96Zn0.04Te was annealed at 500 °C in a Cd atmosphere for 5 h, the luminescence due to the recombination of the electrons in the conduction band with acceptors (eA°) and to the donor–acceptor pair (DAP) transitions disappeared. After the p-Cd0.96Zn0.04Te was hydrogenated, the intensity of the exciton luminescence increased so that the (eA°) and DAP peaks related to the Cd vacancies disappeared, and the defect band in the low energy range between 1.4 and 1.5 eV also vanished. These results indicate that hydrogen atoms passivated not only shallow donors but also deep acceptor impurities and that the hydrogen atoms were separated from the hydrogenated samples at 400 °C due to their thermal energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352833
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  • 8
    Electronic Resource
    Electronic Resource
    Photoconductivity spectra of CdGa2Se4:Co2+ single crystals (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5469-5471 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystals of CdGa2 Se4 :Co2+ were grown by the chemical transport reaction method. We observed the photoconductivity peaks at 2.13, 1.96, and 1.86 eV due to the cobalt impurity. The photoconductivity impurity peaks correspond to electronic transitions of Co2+ ion with S4 symmetry between the valence subband, the lower conduction band, and the split energy levels of Co2+ in the forbidden band gap of the CdGa2 Se4 :Co2+ single crystals. We also observed photoconductivity peaks at 3.09, 3.20, and 3.32 eV due to the optical transitions from the subbands Γ5 +Γ8, Γ6 +Γ7, and Γ6 +Γ7 located below the valence band to the lower conduction band Γ5 +Γ8. The temperature dependence of the energy of the principal photoconductivity peaks P11 and P21 for the undoped CdGa2 Se4 and the CdGa2 Se4 :Co2+ single crystals can be well modeled by the Varshni equation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340370
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  • 9
    Electronic Resource
    Electronic Resource
    Deep electron traps in GaAs layers grown on (100)Si substrates by metalorganic chemical vapor deposition (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2454-2456 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep electron traps in GaAs layers grown on (100) 3 °-off Si substrates by metalorganic chemical vapor deposition were investigated by deep-level transient spectroscopy and a computer simulation method. The four electron traps with the activation energies of 0.81, 0.68, 0.57, and 0.53 eV below the conduction band were measured in GaAs epilayers on Si substrates, whereas only the EL2 level (Ec−0.81 eV) was detected in GaAs on a GaAs substrate. From the dependencies of concentration on the thickness of GaAs epilayer and Si substrate, it was assumed that the Ec−0.57 eV trap might be a Si-dislocation complex defect. The Ec−0.68 eV trap showed a similar behavior to that of the deep trap created in the plastically deformed bulk GaAs, and then its origin was supposed to be a defect induced by a stress due to the differences of thermal expansion coefficient and lattice parameter between Si and GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345493
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  • 10
    Electronic Resource
    Electronic Resource
    Hole carrier in MgB2 characterized by Hall measurements (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 982-984 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The longitudinal resistivity (ρxx) and Hall coefficient (RH) were measured for MgB2 sintered under high pressure. We found that RH is positive like cuprate high-Tc superconductors, and decreases as the temperature increases for 40 K 〈T〈300 K. The cotangent of the Hall angle was found to follow a+bT2 behavior from Tc to 300 K. At T=100 K, RH=4.1×10−11 m3/C from which the hole carrier density was determined to be 1.5×1023/cm3. This carrier density is 1–2 orders of magnitude larger than those of Nb3Sn and optimally doped YBa2Cu3Oy superconductors. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1392979
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