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  • 1
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    Ambipolar behavior in MoS2 field effect transistors by using catalytic oxidation (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-11-01
    Description: Modulation of electrical properties in MoS 2 flakes is an attractive issue from the point of view of device applications. In this work, we demonstrate that an ambipolar behavior in MoS 2 field effect transistors (FETs) can be easily obtained by heating MoS 2 flakes under air atmosphere in the presence of cobalt oxide catalyst (MoS 2  + O 2  → MoO x  + SO x ). The catalytic oxidation of MoS 2 flakes between source-drain electrodes resulted in lots of MoO x nanoparticles (NPs) on MoS 2 flakes with thickness reduction from 64 nm to 17 nm. Consequently, N-type behavior of MoS 2 FETs was converted into ambipolar transport characteristics by MoO x NPs which inject hole carriers to MoS 2 flakes.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 2
    Electronic Resource
    Electronic Resource
    Vibrational dynamics of the bifluoride ion. I. Construction of a model potential surface (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 466-472 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Construction of an extended model potential surface for the bifluoride ion [FHF−] is described, based on ab initio calculations for the free ion at the CID (configuration interaction, double replacement) level with a Huzinaga–Dunning double-zeta basis set. 710 data points were generated, for displacements in the three noncyclic vibrational coordinates exploring the potential surface to a height at least 30 000 cm−1 above its minimum, and giving a realistic account of the dissociation into HF+F−. Analogous calculations were made for HF and F− using the same basis. The predicted hydrogen bond energy (De) is 48.13 kcal/mol, with equilibrium F–F separation Re =4.2905 a.u., in good agreement with other recent calculations. A model potential has been constructed, based on a superposition of Morse potentials associated with each H–F distance plus a fairly structureless correction function expressible as a 36-term least-squares polynomial in the prolate spheroidal coordinates used to describe vibrational displacements. The resulting model surface fits all 710 ab initio data points with an r.m.s. deviation of 65.6 cm−1, and points less than 15 000 cm−1 above the minimum with a deviation of 26.3 cm−1. This surface provides the basis for a series of vibrational dynamics studies on the FHF− system being done in this laboratory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458449
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  • 3
    Electronic Resource
    Electronic Resource
    A calibration method of a radio frequency magnetic probe (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 3774-3775 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We demonstrate a simple calibration method of a rf magnetic probe by utilizing a two port network analysis method. The sensitivity (V/G) of the probe is determined by measuring the scattering parameters of S11 and S21. The magnetic field generated by the Helmholtz coil is calculated from S11 and the probe sensitivity is obtained from S21. The measured probe sensitivity is 0.1–0.6 V/G in the frequency range of 1–15 MHz. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149951
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  • 4
    Electronic Resource
    Electronic Resource
    Classical and quantum proton vibration in a nonharmonic strongly coupled system (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 4611-4627 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Classical and quantum descriptions of proton vibration are compared for a coupled nonharmonic model based on an ab initio potential for the bifluoride ion, [FHF]−. Accurate quantum calculations and exact classical dynamics are compared with quantum and classical versions of the self-consistent-field (SCF) approximation. Semiclassical and quantum SCF eigenvalues agree within JWKB-type errors. The SCF scheme closely approximates exact quantum states for the lowest 4–5 vibrational levels of each symmetry, except at avoided crossings where strong CI mixing of SCF levels occurs. True classical motion, however, is mainly irregular except at very low energies, and even where it remains regular it may be strongly reorganized by a 1:1 periodic resonance associated with major potential surface features. Strongly mixed CI states at systematic avoided crossings of SCF levels at higher energies do have classical analogs in the reorganized classical motions seen at low energies; stabilized CI components correspond to a stable periodic 1:1 orbit, destabilized components to an unstable periodic 1:1 elliptical orbit. Canonical perturbation theory is used to study further the sense in which the exactly separable classical SCF Hamiltonian is "close'' to the true Hamiltonian. Where true motion is modal or SCF-like, first-order perturbed trajectories and second-order perturbed energies describe it very accurately. However since the dynamics can be strongly disturbed even at very low energies, correlation effects are obviously not "small'' in the sense usually meant in classical dynamics, i.e., that regular trajectories mostly remain regular in the nonseparable perturbed system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.466060
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  • 5
    Electronic Resource
    Electronic Resource
    Simplified large current crowbar switch using thyristors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 3006-3008 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We demonstrate a large current power crowbar switch using thyristors without complex snubber circuits. Current sharing was obtained by selecting circuit elements for uniform impedance of parallel switches and varistors were used for voltage sharing between series elements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144347
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  • 6
    Electronic Resource
    Electronic Resource
    Measurements of the electron temperature by the Thomson scattering system on the Hanbit magnetic mirror device : Papers from the thirteenth topical conference on high temperature plasma diagnostics (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 1118-1121 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A Thomson scattering system on the Hanbit magnetic mirror device has been installed to measure the electron temperature and density of the plasma in the central cell. The configuration is based on a standard 90° scattering scheme. The optical system consists of a Q-switched Nd:YAG laser, input optics, collection optics, spectrograph optics, detectors, and a data acquisition system. Although the laser beam path is about 50 m long and the background emissions are not low, the electron temperature measurements have been made at a single point on a shot-by-shot basis, in which the stray light was considerably suppressed by using a beam dump, a viewing dump, and baffles. The measured electron temperature is about 50–70 eV in experiments for plasma production and heating by ICRF of 200-kW-rf power using a slot antenna. A description of the installed system and the experimental results are presented. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1321749
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  • 7
    Electronic Resource
    Electronic Resource
    Performance of Co/Al2O3/NiFe magnetic tunnel junctions prepared by a two-step rf plasma oxidation method (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1160-1162 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-step rf plasma oxidation technique of an insulating layer has been performed to enhance electrical and structural properties of magnetic tunnel junction (MTJ) devices. Comparison was made by analyzing properties of the MTJ oxidized by conventional rf and two-step rf plasma oxidation methods. Experimentally observed results give improved surface imaging and sufficient oxygen contents of the insulating layer under the two-step oxidation method. In addition, electrical breakdown voltage and magnetoresistance of the MTJ were increased from 0.7 to 1.8 V and from 4.5% to 6.8%, respectively, correlated with improved structural information. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1391407
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  • 8
    Electronic Resource
    Electronic Resource
    Interface control of Bi4Ti3O12 film growth on Si(100) by use of an ultrathin silicon oxynitride buffer layer (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1858-1860 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical properties of Bi4Ti3O12 (BiT) films on Si(100) were improved due to insertion of silicon oxynitride (SiON) buffer layers with thicknesses of 1–2 nm. Capacitance–voltage measurements indicated that the improvement was largely attributable to better Si interface properties rather than to the difference of the BiT film quality. By means of x-ray photoelectron spectroscopy and high-resolution transmission microscopy, the Si interfaces of the specimens with and without the SiON buffer layers were investigated. Consequently, we found that a postannealing treatment at 680 °C inevitably resulted in nonuniform growth of Si oxide layers at the Si interface of the specimen without the SiON buffer layer, and that the layer thickness mounted to approximately 10 nm. In contrast, 1–2-nm-thick SiON buffer layers terminated the growth of the additional oxide layer of less than about 3 nm, and the resulting Si oxide layers were quite uniform. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1400078
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  • 9
    Electronic Resource
    Electronic Resource
    Elliptical grain growth in the solid-phase crystallization of amorphous SrBi2Ta2O9 thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2933-2935 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: During the crystallization process of amorphous SrBi2Ta2O9 (SBT) thin films at 800 °C in a dry O2 ambient, we have found elliptical nuclei in the initial nucleation state. These elliptical grains are preferentially oriented to [110] direction in the [11¯0] direction of projection. Elliptical grain growth keeps [110] as increasing the annealing time at 800 °C. Transmission electron microscopy and selected-area electron diffraction pattern indicate that the origin of 〈110〉-oriented crystallization is due to the highest ionic packing (001) SBT plane which includes TaO6 octahedra and the nearest bonding direction of TaO6 octahedra in SBT plane is the 〈110〉 direction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123970
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  • 10
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    Effect of PAHM (Poly-acrylonitrile Hollow Microsphere) addition on the Lightweight and Firing Behavior of Whiteware (2011)
    Institute of Physics (IOP)
    Details
    Publication Date: 2011-09-17
    Description: The pore generation technology using PAHM (Poly-acrylonitrile Hollow Microsphere) was studied in order to reduce the weights of tableware. In this study, we verify the property of modified slurry and plasticity of green body by adding PAHM. The modified slurry was prepared by adding 25~55vol% of PAHM to the slurry for whiteware. The viscosity of slurry was controlled to be low value (25~45vol%). However, the viscosity of modified slurry increased and the plasticity of modified green body decreased inside the 45~55vol% range. The formed specimen by slip casting was fired at 1225 °C, 1240°C. As the amount of PAHM content increased, the weight decreased and the addition of 45vol/% of PAHM resulted in a weight drop of 39%. However, when the PAHM content increased, the strength decreases over 50%. This is caused by the presence of a large volume of surface defects (pores) and defects from the agglomeration of PAHM.
    Print ISSN: 1757-8981
    Electronic ISSN: 1757-899X
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by Institute of Physics (IOP)
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