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  • 1
    Electronic Resource
    Electronic Resource
    Preparation of Y-Ba-Cu-O high Tc superconducting thin films by plasma-assisted organometallic chemical vapor deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 194-196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of the high Tc superconducting Y-Ba-Cu metal oxide have been prepared for the first time by plasma-assisted organometallic chemical vapor deposition using β-diketonate chelates of Y, Ba, and Cu, Y(C11H19O2)3, Ba(C11H19O2)2, and Cu(C11H19O2)2 as starting materials, followed by post-annealing under a reduced pressure of oxygen stream. X-ray diffraction spectra indicate that the films deposited on the yttria-stabilized zirconia (YSZ) substrate have a significant preferential orientation of the crystallite c axis being perpendicular to the substrate surface. Four-probe resistivity measurements reveal the temperature of the onset of superconductivity at 91.6 K and zero resistance by 78.5 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102404
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  • 2
    Electronic Resource
    Electronic Resource
    Ordering of Tl and Bi in Bi-doped Tl-1223 high Tc superconductors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 326-330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High Tc superconducting materials with nominal compositions of Tl1-xBix(Sr, Ba)2Ca2Cu3O9 (0≤x≤0.5) have been investigated using x-ray powder diffractometry and electron microscopy. It was found that Tl and Bi cations were in an ordered arrangement in the (Tl, Bi)–O atomic layer. Although the proposed supercell is 4a×4b×4c derived from the basic unit cell of the undoped TlBa2Ca2Cu3O9 (Tl-1223), the basic two-dimensional superlattice in the (Tl, Bi)–O layer is 2a×4b or 4a×2b with Bi cations at the center and the corner of the rectangle, giving an ideal and preferred composition with the Tl:Bi ratio of 3:1. Accordingly, the maximum Bi doping for Tl in the solid solution is 25%. The proposed model of the superstructure was supported by computer simulation of electron diffraction patterns. The mechanism of formation of the superstructure is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362823
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  • 3
    Electronic Resource
    Electronic Resource
    Bias independent heavy- and light-hole degeneracy in InGaAs/InGaAsP quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 683-685 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a type of strained semiconductor quantum-well structure that exhibits bias-independent heavy- and light-hole degeneracy. This effect is achieved by inserting thin layers of highly strained material in an unstrained quantum well. By adjusting the thickness and the position of the highly tensile strained layers, the quantum confined Stark effect for the heavy and light holes can be engineered separately to control the bias dependent polarization properties. Experimental results on such a structure agree well with the theory. These unique bias-dependent polarization properties have important applications in optoelectronic devices when specific polarization properties are required. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120845
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of carbon nanotubes on cobalt disilicide precipitates by chemical vapor deposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3297-3299 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully grown carbon nanotubes on cobalt-implanted silicon with various doses. The morphology of such tubes has been examined by scanning electron microscopy, transmission electron microscopy, and Raman scattering. On contrary to the commonly used transition-metal nanoparticle catalysts, nanometer-sized CoSi2 precipitates produced in the as-implanted substrates are believed to act as nucleation centers for the formation of carbon nanotubes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121629
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  • 5
    Electronic Resource
    Electronic Resource
    Comparison of transport scattering and single-particle relaxation times in modulation-doped heterostructures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 390-394 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transport scattering and single-particle relaxation times which characterize a two-dimensional electron system have been investigated by using thermal neutron irradiation. The ratios of transport scattering time to single-particle relaxation time are observed to vary from 1.7 to 7.8 depending on the electron density. A decrease in single-particle relaxation time is found while the transport scattering time increases as the electron concentrations increase. These phenomena are relevant to the Hall plateau broadening and enhancement of Shubnikov–de Haas oscillations in such an experiment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357086
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  • 6
    Electronic Resource
    Electronic Resource
    The role of high-pressure sintering in preparing high-quality n-type Nd2−xCexCuO4−y superconductors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 843-849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-pressure high-temperature sintering (HHS) under 1.0, 2.0, 4.0, and 6.0 GPa for a short time was directly used to reduce n-type Nd1.85Ce0.15CuO4−y. Superconductors with higher critical temperature were obtained. The samples display lower resistivity, and more metalliclike resistance behavior at normal state with increasing sintering pressure. A small increase of lattice parameter and cell volume was observed via electron and x-ray diffraction. Transmission electron microscopy studies also show that there is a preferential orientation along the c axis among the neighboring grains. This helps get well-matching grain boundaries in the HHS samples. A Cu2O high-pressure phase was found via energy-dispersive x-ray analysis in the sample treated above 5.0 GPa, which is thought to be a deleterious factor for superconductivity. Sintering under suitable pressure not only enhances the intragranular conductivity, but also effectively improves the intergranular links. Finally, via the assumed interstitial oxygen ordering in the T' structure, a possible mechanism of n-type reduction is proposed based on the change in tolerance factor under reduction atmosphere and high pressure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353323
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  • 7
    Electronic Resource
    Electronic Resource
    A novel approach for doping impurity in thin film in situ by dual-beam pulsed-laser deposition (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 3659-3661 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Doping techniques are of great importance in developing new materials and devices. We present here a novel approach for doping impurity in thin film by using dual-beam pulsed-laser deposition technique that allows in situ controlling doping under a wide range of conditions. We demonstrated doping Ag in situ in YBa2Cu3O7−δ thin films and for the first time observed long bar-like Ag structures with a length up to 150 μm in the as-deposited films, which may have important application in the fabrication of superconductor-normal metal-superconductor Josephson junctions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149168
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  • 8
    Electronic Resource
    Electronic Resource
    In situ reflection high-energy electron diffraction observation of epitaxial LaNiO3 thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3000-3002 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial LaNiO3 (LNO) thin films were grown on (001) SrTiO3 substrates by laser molecular-beam epitaxy. The growth process of the LNO films was monitored by in situ reflection high-energy electron diffraction (RHEED). Clear RHEED patterns and the intensity oscillation of RHEED were observed during the epitaxial growth process. The morphology of the films was studied by atomic force microscopy. The results show that the films grown by this method have a nanoscale smooth surface with the root-mean-square surface roughness smaller than 7 nm on an area of 1×1 μm2. X-ray diffraction patterns indicate that the crystalline LNO films exhibited preferred (00l) orientation. The resistivity of the thin film is 0.28 mΩ cm at 278 K and 0.06 mΩ cm at 80 K, respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369635
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  • 9
    Electronic Resource
    Electronic Resource
    Granular growth of Fe3O4 thin films and its antiphase boundaries prepared by pulsed laser deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7398-7400 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe3O4 thin film prepared by pulsed laser deposition on Si (100) substrate has been investigated by transmission electron microscopy from plane and cross-sectional views. The thin film, which shows a spinel structure as characterized by selected-area diffraction, is about 180 nm thick with granular growth of particle size about 50 nm. High resolution electron microscopy observations indicate reduced thickness of the native SiO2 layer between the thin film and Si due to rastering of the substrate surface by an unfocused laser beam before the deposition. By using a 220 diffraction spot in two beam condition near the 〈001〉 axis of a single Fe3O4 grain, antiphase boundaries (APBs) inside the grains could be clearly resolved. The existence of APBs in the thin film is consistent with the magnetic experiments including an open hysteresis loop and unsaturated magnetization in relatively high magnetic fields. This study suggests that APBs are not unique to Fe3O4 films grown on MgO substrates. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1358831
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  • 10
    Electronic Resource
    Electronic Resource
    Magnetic properties of iron and iron platinum alloys synthesized via microemulsion techniques (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5615-5617 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, metallic iron, and iron/platinum alloys nanoparticles have been synthesized via chemical assembly and magnetically characterized. Fabrication of iron and iron/platinum particles was achieved by reducing 0.1 M aqueous metal salts confined in the polar portions of inverse micelles of cetyltrimethylammonium bromide with borohydride. The dc susceptibility of a sample of 8 nm iron nanoparticles exhibits a blocking temperature of 54 K and coercivity of 200 G at 10 K. The presence of the gold coatings prevented oxidation and allowed the samples to be manipulated without additional precautions to prevent oxidation. Two iron/platinum alloys have been synthesized and verified by x-ray powder diffraction and transmission electron microscopy. Magnetic characterization is performed using superconducting quantum interference device magnetometry. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372468
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