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  • National Academy of Sciences  (48)
  • American Institute of Physics (AIP)  (23)
  • Copernicus  (12)
  • 1
    Electronic Resource
    Electronic Resource
    Interface structure and perpendicular magnetic anisotropy in Pt/Co multilayers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3953-3959 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pt/Co multilayers sputter-deposited in Ar and Xe ambients, and periodic multilayers composed of specific combinations of Pt, Pd, and Co layers, were grown to study the effects of energetic backscattered Ar neutrals on the interface structure. The effects were correlated with the magnetic and magneto-optical properties with emphasis on the perpendicular magnetic anisotropy, K⊥. Films were characterized by high-resolution transmission electron microscopy, x-ray diffraction including grazing incidence geometry, and magnetic circular x-ray dichroism techniques as well as by standard magnetic and magneto-optic methods. It is found that the perpendicular magnetic anisotropy is extremely sensitive to the degree of intermixing, sharp interfaces yielding the largest anisotropy. The three to fourfold difference in K⊥ found between Ar and Xe sputtered films can be directly correlated to the magnitude of the orbital moment contribution 〈LZ〉 in the Co. This orbital contribution is found to be strongly sensitive to the interface sharpness in the films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358577
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  • 2
    Electronic Resource
    Electronic Resource
    Relationship between electroluminescence and current transport in organic heterojunction light-emitting devices (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7991-8006 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measure the current–voltage and electroluminescence characteristics of single-heterojunction, vacuum-deposited organic light-emitting devices (OLEDs) over a wide range of materials, temperatures, and currents. We find that the current is limited by a large density of traps with an exponential energy distribution below the lowest unoccupied molecular orbital. The characteristic trap depth is 0.15 eV. Furthermore, in metal–quinolate-based devices, electroluminescence originates from recombination of Frenkel excitons, and its temperature dependence is consistent with the excitons being formed by Coulombic relaxation of the trapped electrons with holes injected from the counter electrode. By semiempirical molecular orbital modeling, we find that the trap distribution obtained from the current–voltage characteristics is consistent with a distribution in the metal–quinolate molecular conformations which result in a continuous, exponential distribution of allowed states below the lowest unoccupied molecular orbital. We discuss the implications of the intrinsic relationship between electroluminescence and current transport in OLEDs for the optimization of efficiency and operating voltage in these devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362350
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  • 3
    Electronic Resource
    Electronic Resource
    Magneto-optical characteristics of SiN/GdFe films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3744-3747 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magneto-optical and optical properties of GdFe single layer films, which are covered with a thin Si3N4 layer, were studied in the visible wavelength region. A Kerr rotation peak and a reflectivity drop were observed near 4.1 eV in GdFe alloyed films and attributed to the Gd element. Compared with the single thick GdFe film, the Kerr effect of SiN/GdFe bilayers was enhanced, due to the optical interference between Si3N4 and GdFe. The Kerr rotation of GdFe films showed a nonlinear function of the compositions in the whole measured wavelength range. Magneto-optical measurements directly evidence the spin–flip in the GdFe films as the Gd content increased from 20.7 to 24.2 at. %, which showed advantages over conventional magnetometry. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1336562
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  • 4
    Electronic Resource
    Electronic Resource
    Preparation of cantilevered W tips for atomic force microscopy and apertureless near-field scanning optical microscopy (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 2942-2947 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Tip characteristics play an important role in the resolution and sensitivity of scanning probe microscopy. Extensive efforts have been devoted to tip fabrication. Most of the research is focused on scanning tunneling microscopy applications, which require sharp and short tips. Long tips that can be bent into cantilevered tips have great potential in atomic force microscopy/apertureless near-field scanning optical microscopy applications. However, the fabrication of such tips has been rarely reported. The present work is carried out with the aim of optimizing the conditions suitable for fabricating long and sharp tungsten tips. Besides topography, optical, and spectroscopic information, electrical and magnetic measurements can also be carried out with such tips obtained with the recipe reported in this article. The long tips also make it possible to measure deep grooves/trenches. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1494867
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  • 5
    Electronic Resource
    Electronic Resource
    Giant magneto-optical Kerr effect enhancement in layered CoMn/Si structures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6788-6790 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For sputtered Co57Mn43/Si film samples with different ferromagnetic thickness, the spectra of the complex magneto-optical polar Kerr rotation and optical constants were ex-situ measured. For 5 nm-thick Co57Mn43 film, the Kerr rotation around 4.3 eV was enhanced by a factor of about 10 times with lower loss of the signal intensity as compared to the thick film. Numerical calculations show that the enhancement effect is attributed to an interplay between optical properties of Co57Mn43 and substrate Si that has a strong interband transition (E2) near 4.3 eV. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372842
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  • 6
    Electronic Resource
    Electronic Resource
    Temperature dependence of Raman scattering in hexagonal gallium nitride films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3332-3337 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: First-order Raman scattering of hexagonal GaN single crystal films deposited on sapphire substrate by low pressure metal organic chemical vapor deposition is studied between 78 and 870 K. The temperature dependence of the five GaN Raman modes is obtained. Both the linewidth and Raman shift exhibit a quadratic dependence on temperature in our measured temperature range. Excellent agreement was found between the experiment data and calculated results based on a model involving three- and four-phonon coupling. Our results indicate it is necessary to include the contributions of both the thermal expansion and four-phonon terms in the four-phonon anharmonic processes to explain the change of Raman shift and linewidth with temperature. In addition, a decrease in the splitting between the longitudinal optical and transverse optical phonons with increasing temperature was also observed. From these data a weak nonlinear decrease of the transverse effective charge with increasing temperature is derived. The comparison of the transverse effective charge eT* at room temperature was made between experimental data and theoretical calculations by a pseudopotential expression and bond orbital model. Good agreement between theory and experiment is achieved. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372344
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetism of ultrathin films of Fe on Cu(100) : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5209-5211 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetism in ultrathin (1–10 ML) Fe films grown on Cu(100) has been studied by spin-polarized secondary electron emission spectroscopy. The variation of the magnetization with temperature and oxygen adsorption was investigated for various film thicknesses. The orientation of the magnetization for films between 5 and 6 ML thick switches reversibly between perpendicular (at low temperature) to in-plane (at high temperature). The switching transition temperature decreases with increasing film thickness, and is accompanied by a loss of long-range order over a range of 20–30 K. The transition is attributed to the temperature dependence of the perpendicular anisotropy. The effect of oxygen adsorption onto films with perpendicular remanence is to first suddenly turn the magnetization into the plane at a critical coverage, and then to kill the magnetization gradually with continued exposure. This indicates that the uniaxial surface anisotropy at the Fe-vacuum interface plays a major role in the magnetization of the film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348077
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  • 8
    Electronic Resource
    Electronic Resource
    Laser-induced direct formation of C54 TiSi2 films with fine grains on c-Si substrates (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1727-1729 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report on the direct synthesis of C54 TiSi2 films with fine grains by pulsed-laser irradiation from Ti deposited on Si substrates, using a Q-switched Nd:YAG laser. The films were characterized using micro-Raman spectroscopy, high-resolution transmission electron microscopy, and atomic force microscopy. In comparison with the C54 TiSi2 using the conventional rapid thermal annealing (RTA) of 35 nm thick Ti/Si, which has an average grain size of about 110 nm and film thickness of 50 nm, the laser-induced C54 TiSi2 films vary from 13 to about 42 nm in thickness with different laser scanning speed and the grain size is 85 nm on average. The TiSi2/substrate Si interface is smooth on the atomic scale. Our results demonstrate the unique advantages of the laser-induced formation technique and its potential in deep submicron semiconductor technology. We propose that the C54 phase is formed by solid-state diffusion, rather than melting. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124801
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  • 9
    Electronic Resource
    Electronic Resource
    Near infrared excited micro-Raman spectra of 4:1 methanol–ethanol mixture and ruby fluorescence at high pressure (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 8011-8017 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Near infrared (NIR) lasers, as a new excitation source for Raman spectroscopy, has shown its unique advantages and is being increasingly used for some special samples, such as those emitting strong fluorescence in the visible region. This article focuses on some issues related to high-pressure micro-Raman spectroscopy using NIR excitation source. The Raman spectra of 4:1 methanol–ethanol mixture (4:1 M–E) show a linear variation in both Raman shifts and linewidths under pressure up to 18 GPa. This result is useful in distinguishing Raman scattering of samples from that of the alcohol mixture, an extensively used pressure-transmitting medium. The R1 fluorescence in the red region induced by two-photon absorption of the NIR laser is strong enough to be used as pressure scale. The frequency and line width of the R1 lines are very sensitive to pressure change and the glass transition of the pressure medium. Our results manifest that it is reliable and convenient to use NIR induced two-photon excited fluorescence of ruby for both pressure calibration and distribution of pressure in the 4:1 M–E pressure transmitting medium. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370636
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  • 10
    Electronic Resource
    Electronic Resource
    Interaction of overlayers of Al and Rb with single-crystalline surfaces of Bi2Sr2CaCu2O8 (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2667-2670 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoemission results from Al and Rb interfaces with single crystals of Bi2Sr2CaCu2O8 high-temperature superconductors are reported. The Al and Rb adsorbates are found to react quite differently with the Bi2Sr2CaCu2O8 substrate. While adatoms of Rb significantly affect only the Bi and O atoms in the top atomic layer, the Al adsorbate profoundly disrupts the bonding character of the whole Bi2Sr2CaCu2O8 material. For Al, the Bi and Cu states are strongly reduced, and the Sr and O states show evidence of oxidized components. In addition, Al causes a strong out-diffusion of oxygen from the bulk. The differences in the reactivity of Al and Rb are discussed in terms of the different mobility of the two atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345480
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