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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 313-314 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Second-harmonic generation of tunable CO2 laser radiation is reported and analyzed in ZnGeP2 both by angular and temperature tunings. Temperature tuning can thus be advantageously employed in this crystal for nonlinear devices.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1489-1491 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synchronous noncollinear upconversion detection is reported for the first time with a Nd:YAG laser in AgGaS2. Q-switched pump laser pulses with a repetition rate up to 50 Hz were synchronized with intracavity chopped continuous wave CO2 laser pulses. Results were obtained both by tuning the CO2 laser and by varying the angle between the laser beams.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1383-1384 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Noncollinearly phase-matched second-harmonic generation is reported for the first time in beta barium borate crystal and compared with existing KDP and KD*P crystals using Nd:YAG radiation.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1846-1851 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An emission spectroscopy study is made of an rf magnetron discharge used to sputter deposit CdTe in Ar. The dependence on gas pressure and rf power of the strongest Cd, Te, and Ar emission line intensities (I) is determined for both the negative glow and the positive column. It is shown that the sputtered atom density NCd (NTe) is proportional to ICd/IAr (ITe/IAr) as the rf power is varied at pressures near 0.5 Pa, and that such a relationship does not hold as the gas pressure is varied. From the power dependence of IAr it is deduced that Ar atoms are excited to emitting states directly from the ground state; no evidence for the influence of intermediate metastable states is observed.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5111-5113 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The third harmonic of a Nd:YAG laser is generated in a beta barium borate crystal by noncollinear sum frequency mixing of the second harmonic with the fundamental beam from a Nd:YAG laser. Tunable ultraviolet radiation is also generated by the second harmonic of different dye lasers in this crystal.
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 26 (1985), S. 2840-2846 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: In this paper the equivalence between a perfect fluid with electromagnetic field and a viscous fluid with heat flux is considered. Heat flux, shear tensor, and other fluid parameters are readily calculated out of the magnetohydrodynamic fluid parameters.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2530-2535 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depending on the deposition conditions, amorphous SixHy alloy films prepared by planar rf reactive magnetron sputtering exhibit one of three types of microstructure: (i) type A with no discernible microstructural features down to the 20-A(ring) level and with a smooth uniform density; (ii) type B consisting of high-density regions of 50–200-A(ring) lateral dimensions separated by a low-density network; and (iii) a two-level (type C) microstructure consisting of 300–500-A(ring) dimensions columns separated by a pronounced low-density network. The columns, in turn, are composed of 50–200-A(ring) dimension high-density regions interspersed with low-density network. The Si-2p level in these alloy films, determined by x-ray photoelectron spectroscopy, is observed to be strongly influenced by the microstructure of the film. A shift in the Si-2p level, systematically varying with the hydrogen concentration, is observed in alloy films with type B and type C microstructures. No shift is observed, irrespective of the hydrogen concentration, in alloy films with type A microstructure. The photoelectron spectra are examined in the light of the vibrational spectra of the films as measured by Fourier transform infrared techniques. The dependence of the Si-2p level shift on the microstructure and the variation with hydrogen concentration are explained qualitatively in terms of the differences in the silicon–hydrogen bonding in amorphous SixHy films with dissimilar microstructures.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3160-3168 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous SixHy alloy films have been prepared by planar rf reactive magnetron sputtering with a wide range of electrical, optical, optoelectronic, and microstructural characteristics. The photoconductivity of the films is observed to depend sensitively on the microstructure. In particular, the interrelationship between the dark conductivity (σdark), the photoconductivity (σph), the photoconducting gain (σph/ σdark), and the optical band gap (Eg) of a film is strongly influenced by the microstructure. It is shown that films with a particular combination of σdark, σph, σph/ σdark, and Eg values can only be prepared with a specific type of microstructure.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4843-4845 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the structural, optical, and electrical properties of Pb1−xYbxTe films (0〈x〈0.25) obtained by coevaporation onto Vycor, NaCl, and BaF2 substrates. They crystallize in the NaCl-type structure. The lattice parameter decreases slowly as x increases, not obeying the Vegard's law. Our data seem to indicate the stability of Yb2+ for 0〈x〈0.25. The optical band gap increases linearly with x. The resistivity of the films (n type) increases slowly whereas the mobility (135 cm2/V s for x=0.008) decreases faster as x increases.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2963-2966 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Minority-carrier diffusion lengths have been measured in electron-beam-induced current experiments with the electron beam of the scanning electron microscope both parallel and perpendicular to a Schottky barrier on single-crystal silicon. Results from the two geometries are compared. The usefulness of the top surface geometry (beam perpendicular to the barrier) has been extended by measuring both the short-circuit current and its derivative as a function of position, allowing the diffusion length to be calculated without knowing the exact position of the Schottky-barrier edge. This is particularly useful when the barrier edge is indistinct, as often occurs for evaporated or sputtered barrier layers. Measurement of the derivative signal has been accomplished by position modulation of the scanning electron beam combined with a lock-in amplifier for signal detection.
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