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  • American Institute of Physics (AIP)  (4)
  • 1990-1994  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2951-2957 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Critical current densities Jc were measured in as-deposited, c-axis-oriented Bi2Sr2Ca2Cu3Ox thin films with Tc values as high as 97 K, which were prepared by metalorganic chemical-vapor deposition. These films showed high Jc ((approximately-greater-than)109 A/m2) at 77.3 K in high magnetic fields (≥1 T, H(parallel)a-b plane). The best values are 3.3×109 A/m2 at 1 T and 9.1×108 A/m2 at 8 T, which are the highest Jc for Bi-oxide thin films among those reported so far. There were no signs of weak links in the Jc(H) behavior, and the surface morphology examined by scanning electron microscopy showed no apparent grain boundaries. The values of Jc decreased sharply when the applied field deviated from the a-b plane, and went to zero at the angles where the field component in the c direction is nearly equal to the irreversibility field Hc2* parallel to the c axis. The angular dependence of Jc of these films is most reasonably explained by the theory of intrinsic pinning.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1309-1312 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation effects on cubic silicon carbide (3C-SiC) metal-oxide-semiconductor (MOS) structures have been studied with high-frequency capacitance-voltage measurements. It was 〈m1;38p〉found that interface traps are generated at the 3C-SiC/SiO2 interface and oxide-trapped charges are built up in the oxide by 60Co gamma-ray irradiation. The generation of the interface traps and the oxide-trapped charges are affected by bias polarity applied to the gate electrode during the irradiation. Absorbed dose dependencies of their generation are discussed comparing with those of Si MOS structures.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4585-4585 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In various paramagnetic and nearly ferromagnetic substances, the phenomenon of the susceptibility maximum at low temperatures is usually accompanied by the Curie–Weiss susceptibility at higher temperatures; the concurrence of these two features is universally observed in 4d and 5d metals, Laves-phase compounds, and heavy-fermion compounds. No existing theories, however, have been able to explain this concurrence. According to the Fermi-liquid model,1,2 we can express the susceptibility, as a matrix form, exactly in terms of the spin-antisymmetric part of the quasiparticle interaction function gij=gεε' (ε is the quasiparticle energy), χ(T)∝β Ji Jj (j↓(1/1+2βψ)↓i)[ni (1−ni)]1/2[nj(1−nj)]1/2, (1) where ψij=[ni(1−ni)]1/2 gij[nj(1−nj)]1/2, ni is the Fermi distribution function at state i, and β=1/kT. If gij is given, Eq. (1) can be evaluated numerically. We use the g function, which contains logarithmic terms such as (ε−μ)2 ln||ε−μ|| arising from the Fermi-liquid effect (μ is the chemical potential). We find that the calculated result for χ(T) gives a broad maximum at low temperatures because of the logarithmic terms and, at higher temperatures, it follows precisely the Curie–Weiss law, which directly reflects the general form of (1). In conclusion, both the susceptibility maximum and the Curie–Weiss behavior are found to be inherent in any Fermi liquid.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1058-1060 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN epilayers were grown on GaAs substrates by gas-source molecular-beam-epitaxy technique using dimethylhydrazine as a nitrogen source. It was found that cubic GaN grows on GaAs (001) surfaces epitaxially, while hexagonal GaN grows on GaAs (111) surfaces, from the analyses of x-ray diffraction and reflection high-energy electron diffraction patterns. Cathodoluminescence measurements suggested that the band-gap energy of cubic GaN is around 0.37 eV larger than that of hexagonal GaN.
    Type of Medium: Electronic Resource
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