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  • American Institute of Physics (AIP)  (15)
  • 1990-1994  (15)
  • 1935-1939
  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in liquid-encapsulation Czochralski (LEC) grown p-type InP:Fe codoped with Zn have been investigated by means of temperature-dependent Hall-effect (TDH), deep-level transient spectroscopy (DLTS), calorimetric absorption spectroscopy, and electron spin resonance measurements. Although a dominant deep hole trap is revealed both by DLTS and TDH measurements in the vicinity of the valence band edge at EV+0.2 eV, the spectroscopic analysis unambiguously invalidates previous speculations on the existence of a second energy level of the isolated iron impurity in the band gap of InP, i.e., a Fe4+/Fe3+ donor level. From the axial concentration profile and a comparison with a LEC-grown p-type InP crystal doped with Zn only it seems that the trap is not even iron-related in contrast to tentative assignments often found in the literature. Native or Zn-related defects which depend on the particular growth conditions used are assumed to account for this level.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5538-5545 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of heat treatment under phosphorus atmosphere on the balance of electronic levels by capacitance-voltage and deep level transient spectroscopy measurements. A series of special samples was annealed under the conditions which we are normally using for the processing of nominally undoped semi-insulating (S.I.) InP. It is shown explicitly that in this annealing process the reduction of the free-carrier concentration is predominantly caused by a reduction of the net concentration of defects related to shallow levels. Furthermore, we have identified in the annealed material two defects related to electron traps with activation energies of 400 and 600 meV, which are created or incorporated during the annealing with limited concentrations of about (0.5–1)×1015 cm−3. On the basis of these results we conclude that for the compensation mechanism in the annealed nominally undoped S.I. InP only a concentration below 1015 cm−3 of defects with a midgap energy level is necessary.
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of pure, nonhydrogenated amorphous silicon (a-Si) was modified by means of ion implantation, furnace annealing, and pulsed laser annealing. Defects in a-Si were probed by measuring the photocarrier lifetime τ at low carrier densities (1018/cm3) with subpicosecond resolution using pump-probe reflectivity measurements. The average cross section of defect-related midgap states for free-carrier capture is found to be 6×10−16 cm2. In addition, the average bond-angle distortion Δθ in a-Si was derived from Raman spectroscopy. Annealing as-implanted a-Si for 1 h at T≤500 °C induces defect annihilation as well as network relaxation. In contrast, 32 ns pulsed laser heating of a-Si just below the melting threshold leads to relaxation of Δθ without significant defect annihilation. This annealing behavior can be understood on the basis of defect diffusion kinetics. Implanting fully relaxed a-Si with 1 MeV B+, Si+, and Xe+ up to damage levels of 0.004 displacements per atom raises the defect density without affecting Δθ. Only after the defect density has saturated at higher damage levels is Δθ returned to the as-implanted level. The electronic density of states of a-Si is determined using optical-absorption spectroscopy, yielding Nsat≈0.5 at. % for the saturation defect density in a-Si at room temperature. Electron paramagnetic resonance shows that a minor fraction (0.02 at. %) of these defects is spin active. The response of c-Si and relaxed a-Si to implantation damage is comparable, suggesting that the defect populations in both materials are similar. Comparing carrier lifetime measurements and Raman spectroscopy for the various experimental treatments demonstrates that there is no unique correlation between the defect density and Δθ in a-Si. Assuming that defects and Δθ have independent enthalpic contributions, the Gibbs free energy of various structural states of a-Si is calculated. These calculations indicate that the melting temperature of a-Si may vary from 1010 to 1490 K.
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of YBa2Cu3O7 have been prepared on SrTiO3 and LaAlO3 substrates by a high-pressure planar dc-sputtering technique. By covering the substrate heater with a frame of polycrystalline YBa2Cu3O7 substantial improvements of the YBa2Cu3O7 film properties were achieved. These are characterized by dc-resistivity values ρ(T) of less than 50 μΩ cm at 100 K and ρ(300 K)/ρ(100 K) values of up to 3.9. Significant deviations from the usual linear ρ(T) behavior were found. Critical temperatures above 90 K, resistive transition widths down to 0.3 K, and critical current densities of about 5 × 106 A/cm2 at 77 K confirm the high quality of the films. As indicated by Rutherford backscattering and high-resolution transmission electron microscopy the films exhibit a microstructure characterized by a reduced density of lattice defects. However, lattice-coherent precipitates with a diameter of about 5–10 nm were observed. As an outstanding feature the films exhibit, besides the initial steep falloff at Tc, a further gradual decrease of the microwave surface resistance at 87 GHz below 50 K by at least one order of magnitude. These results are very promising for millimeter-wave applications of epitaxial YBa2Cu3O7 thin films.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6940-6945 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the effective surface impedance Zeff=Reff+iXeff of superconducting thin films on the film thickness d, on the magnetic field penetration depth λ, and on the dielectric properties of the substrate material is investigated theoretically by means of impedance transformations. It was found that the effective surface resistance Reff can be expressed by RSf(d/λ)+Rtrans where RS is the intrinsic surface resistance of the superconductor. The function f(d/λ) describes the altered current density distribution in the film. Rtrans arises from power transmission through the film. It depends on d and λ as well as on the dielectric properties of the substrate material and is significantly altered in the case of a resonant background. The effective surface reactance Xeff of a superconducting thin film can be expressed by XS cosh(d/λ) where XS=ωμ0λ is the intrinsic surface reactance. Measurements of Zeff at 87 GHz have been performed for YBa2Cu3O7−δ thin films grown epitaxially by laser ablation on SrTiO3, MgO, and LaAlO3. With the best films, Reff (77 K) values of 21 mΩ and RS (77 K) values of 8 mΩ were achieved. The temperature dependence of λ was found to be in good agreement to both weak-coupling BCS theory in the clean limit and the empirical two-fluid model relation with λ (0 K) values ranging from 140 to 170 nm and 205 to 250 nm, respectively.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5457-5457 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently an elegant and quite powerful finite-system approach to determine the exponents ηx and ηz from simple spectral properties has been proposed. For critical systems, the two exponents can be expressed in terms of finite-size spectral gaps as follows: η(N)x=2ΔE01(N)/ΔE(N), η(N)z=2ΔE00(N)/ΔE(N). Here ΔE(N) is the finite-size gap between the ground state (SzT=0,k=0) and the lowest excitation at k=2π/N; ΔE01(N) is the gap to the lowest ||SzT||=1 excitations (at k=π), and ΔE00(N) is the gap to the next lowest SzT=0 excited state. The η(N) sequence is then extrapolated to N→∞. For XY models, differences between s=1/2 and s≥1 appear. For s=1/2, the excitations which determine ΔE00(N) and ΔE(N) are degenerate, which implies that ηz=1/2, in agreement with the exact analytic result. For spin-1, however, the next lowest SzT=0 state is located at k=2π/N instead of k=π, and is therefore identical to the state which determines the gap ΔE.The resulting equality ΔE=ΔE00 implies ηz=2, as in the spin-1/2 case. In fact, our result corresponds to power-law decay for all s, and hence we differ from Schulz and Ziman, who claim the out-of-plane correlation function decays exponentially for s〉1/2. For the in-plane correlation function, the spectral gap method again agrees with the exact result ηx=0.5 for s=1/2. The consensus of this and other numerical methods for s=1 gives a value ηx(approximately-equal-to)0.20, considerably different from the case of s=1/2. Hence it is tempting to conjecture that ηx is s dependent, implying that XY models belong to different universality classes for different s. However, a finite-size study of the conformal anomaly produces the result that c=1, independent of s. This situation is further discussed.
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  • 7
    Electronic Resource
    Electronic Resource
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 5 (1993), S. 3280-3289 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A measurement method is introduced which can detect steady and unsteady flow in electrically conducting fluids. In this method, the flow region is subjected to an externally applied weak magnetic field B0. The induced magnetic field b generated by fluid flow across the field lines of B0 is used for the flow investigations. It can be measured outside the flow region with the advantage that neither electrical nor mechanical connections with the fluid are necessary. The results obtained by the experiment are confirmed by a time-dependent three-dimensional numerical simulation. It is indicated how fluid flow configurations could be deduced by an appropriate measurement of the induced field b.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 6 (1994), S. 2551-2551 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3860-3864 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conditions for the preparation of nominally undoped semi-insulating (SI) InP wafers by annealing under controlled phosphorus pressure are described. It is demonstrated by the results of electrical profile measurements (differential Hall effect) and by photoluminescence that diffusion effects in a thin peripheral layer (≈20 μm) can be correlated to a phosphorus in- and indium out-diffusion. But diffusion of these species is correlated to a donor behavior and relatively slow. It can, therefore, not be used to explain the SI bulk property which seems not to depend on the phosphorus overpressure during annealing.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 352-353 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The piezoelectric modulus d14 of InP was not determined experimentally up to now. By doping InP with Fe now high compensated bulk material is available by liquid-encapsulated Czochralski crystals with a conductivity lower than 10−8 (Ω cm)−1. Excitation of vibration modes leads to a set of closely spaced resonance lines. These data were used to calculate a set of parameters for an electrical equivalent circuit with which the impedance behavior can be described successfully. From this the piezoelectric modulus of InP was derived to be −1.8 pC/N at room temperature. The sign of the constant was determined by qualitative static measurements of the piezovoltage by compressing the crystal.
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