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  • 1
    Electronic Resource
    Electronic Resource
    Detection of C–H bonds in crystalline α-SiC by IR-absorption measurements (1994)
    Springer
    Applied physics 59 (1994), S. 427-429 
    Details
    ISSN: 1432-0630
    Keywords: 61.72.Ii ; 81.15.Gh ; 78.50.Ge
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In SiC epilayers sp 3 C-H bond vibration bands were detected by infrared transmittance measurements. The absorption constants of the transmission peaks are related to the temperature at which the layers were grown and decrease with increasing growth temperature. The absorption centers vanish when the epilayer is removed or after annealing the sample at temperatures very much lower than the growth temperatures in a hydrogen-free atmosphere. These absorption centers are connected to hydrogen on silicon lattice sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331723
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  • 2
    Electronic Resource
    Electronic Resource
    Halleffekt und anisotropie der beweglichkeit der elektronen in ZnO
    Amsterdam : Elsevier
    Journal of Physics and Chemistry of Solids 35 (1974), S. 327-335 
    Details
    ISSN: 0022-3697
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/S0022-3697(74)80026-0
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  • 3
    Electronic Resource
    Electronic Resource
    Uber den Einbau von Kupfer in ZnO-Einkristallen
    Amsterdam : Elsevier
    Journal of Physics and Chemistry of Solids 32 (1971), S. 1971-1977 
    Details
    ISSN: 0022-3697
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/S0022-3697(71)80162-2
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  • 4
    Electronic Resource
    Electronic Resource
    Halleffekt und anisotropie der beweglichkeit der elektronen in ZnO
    Amsterdam : Elsevier
    Journal of Physics and Chemistry of Solids 35 (1974), S. 327-335 
    Details
    ISSN: 0022-3697
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/S0022-3697(74)80026-0
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  • 5
    Electronic Resource
    Electronic Resource
    CVD growth and characterization of single-crystalline 6H silicon carbide
    Amsterdam : Elsevier
    Physica B: Physics of Condensed Matter 185 (1993), S. 75-78 
    Details
    ISSN: 0921-4526
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4526(93)90216-S
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  • 6
    Electronic Resource
    Electronic Resource
    Chemical vapor deposition and characterization of undoped and nitrogen-doped single crystalline 6H-SiC (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5437-5442 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial growth of single crystalline 6H-SiC layers is performed by chemical vapor deposition (CVD). 6H-SiC substrates are grown by a sublimation technique. They have vicinal surfaces inclined 1.5° to 2° from the (0001) plane towards the [11¯00] direction. We report CVD growth at 1600 °C in the hydrogen-silane-propane gas system with nitrogen as a dopant. High quality films are achieved with growth rates of about 1.8 μm per hour. The layers are examined by optical microscopy, infrared reflection, photoluminescence, and Rutherford backscattering. For electrical characterization capacitance-voltage and Hall measurements are performed. Unintentionally doped layers have donor concentrations in the upper 1015 cm−3 range. Electron mobilities of 370 cm2/V s at room temperature and about 104 cm2/V s at 45 K are observed. To the authors' knowledge this is the highest mobility so far reported for 6H silicon carbide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351985
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  • 7
    Electronic Resource
    Electronic Resource
    The trap emptying process of low temperature thermoluminescence of 6H–SiC single crystals (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4152-4156 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermoluminescence (TL) and thermally stimulated conductivity (TSC) of SiC n- and p-type single crystals were measured in the temperature region 12–300 K. To describe the underlying process, we assumed the classical model consisting of one species of trap and recombination center, respectively. The calculated glow curve can be fitted to the experimental one with good conformity. The analysis of the glow curve main peaks leads to the thermal activation energy of the emptied traps. For nitrogen (N) doped n-type crystals, we obtain thermal activation energies of 80 meV or 140 meV for highly compensated samples. Aluminum (Al) doped p-type samples show an activation energy of 220 meV, boron (B) containing p-type samples one of 330 meV. This corresponds to the well known ionization energies of the shallow doping (N on cubic and hexagonal lattice site for n type and Al, B for p type). To obtain the energy necessary for a charge transfer of the impurity, we studied TL as a function of the excitation wavelength. Here, an excitation energy between 1.65 and 1.9 eV turned out to be necessary to recharge the recombination center. The recombination center responsible for the TL normally acts as compensation in thermal equilibrium. For p-type samples, we can distinguish between the omnipresent N and a second impurity as compensation, which is energetically deeper than 240/300 meV. The chemical nature of these centers is still unknown. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361781
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  • 8
    Electronic Resource
    Electronic Resource
    Gap-state measurements on diamond-like carbon films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3637-3639 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high frequency capacitance-voltage method is used to measure the electronic gap-state density in diamond-like carbon (DLC) films. The gap-state density is derived from the analysis of high frequency capacitance-voltage characteristics of DLC on crystalline silicon (c-Si) heterojunctions. Near the Fermi level the gap-state density in the DLC thin film is obtained of the order 1016 cm−3 eV−1. Furthermore, the energy-band diagram of a DLC/c-Si heterojunction is evaluated, and the work function of DLC is derived to be 3.6 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111955
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  • 9
    Electronic Resource
    Electronic Resource
    Some new features of the photoluminescence of SiC(6H), SiC(4H), and SiC(15R) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 509-513 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low temperature photoluminescence (LTPL) measurements have been performed on 6H, 4H, and 15R polytype SiC crystals. In addition to well-known emission lines close to the band gap a couple of new features could be observed. Emission lines attributed to the recombination of bound excitons at aluminum acceptors have been seen in all three polytypes. A defect interpreted as a divacancy is described for SiC(4H). In SiC(6H) emission lines due to scandium centers have been observed. Furthermore the effect of a uniaxial stress on the LTPL spectrum is investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357103
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  • 10
    Electronic Resource
    Electronic Resource
    Anisotropic oxidation of 6H-SiC (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3276-3281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The anisotropy of the thermal oxidation of 6H-SiC has been investigated. Spheres of Acheson and modified Lely single crystals were prepared and subsequently oxidized under wet oxidation conditions. Afterwards the spheres showed an impressive image of interference colors in different crystal orientations due to different oxide thicknesses. The star-shaped structure on the (0001) Si face and the regular structure in the plane perpendicular to the c axis with six maxima and six minima is remarkable. The orientation of one maximum of oxide thickness could be assigned from Laue diffraction patterns to the (11¯00) and the orientation of one minimum of oxide thickness to the (112¯0) orientation. The oxide thicknesses were determined by Rutherford backscattering spectrometry and subsequently fitting of the measured Rutherford backscattering spectra by a spectrometry simulation program on various points on the spheres. The oxide thickness was determined as a function of the azimuth angle of the sphere. Different behavior at the interface SiC/SiO2 for the (0001) Si face and the (0001¯) C face was observed and is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361225
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