ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
  • 1
    Digitale Medien
    Digitale Medien
    Homoepitaxial growth of GaN using molecular beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2195-2198 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this article, experimental results are presented for the homoepitaxial deposition of a GaN overlayer onto a bulk single-crystal GaN substrate using molecular beam epitaxy. Transmission electron microscopy shows a superior structural quality of the deposited GaN overlayer when compared to heteroepitaxially grown layers. Photoluminescence shows narrow excitonic emission (3.467 eV) and the very weak yellow luminescence, whereas the bulk substrate luminescence is dominated by this deep level emission. These results show that homoepitaxy of GaN can be used to establish benchmark values for the optoelectronic properties of GaN thin films. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363112
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 2
    Digitale Medien
    Digitale Medien
    Continuum model of dispersion caused by an inherent material characteristic length (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4054-4063 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Modifications of the Helmholtz free energy and the stress associated with general constitutive equations of a simple continuum are proposed to model dispersive effects of an inherent material characteristic length. These modifications do not alter the usual restrictions on the unmodified constitutive equations imposed by the first and second laws of thermodynamics. The special case of a thermoelastic compressible Newtonian viscous fluid is considered with attention focused on uniaxial strain. Within this context, the linearized problems of wave propagation in an infinite media and free vibrations of a finite column are considered for the simple case of elastic response. It is shown that the proposed model predicts the dispersive effects observed in wave propagation through a chain of springs and masses as the wavelength decreases. Also, the nonlinear problems of steady wave propagation of a soliton in the absence of viscosity and of a shock wave in the presence of viscosity are discussed. In particular it is shown that the presence of the dispersive terms can cause the stress in a shock wave to overshoot the Hugoniot stress by as much as 50%. This phenomenon may cause an underprediction of the threshold level for failure determined by analysis of stress in shock experiments. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359488
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 3
    Digitale Medien
    Digitale Medien
    Refractive index changes of Pd-coated magnesium lanthanide switchable mirrors upon hydrogen insertion (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 408-413 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The optical effect upon insertion of hydrogen into Pd-coated magnesium lanthanide switchable mirrors is investigated in terms of the changes of their complex refractive indices. A significant change in the optical constants of LnMg layers is seen between the as-deposited state and the dehydrided state after one cycle. Furthermore, the optical effect of switching the Pd cap layer to a PdH cap layer was determined. It is shown that the Pd layer mainly limits the visible transmittance of the hydrided stack to about 35%–40%. Whereas the extinction coefficient of dehydrided LnMg layers at 550 nm is between 2.2 and 3.1, it is as low as 10−4 in the transparent state. This is of great promise to applications requiring large optical contrast (e.g., optical switches). © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.369399
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 4
    Digitale Medien
    Digitale Medien
    Hollow-anode plasma source for molecular beam epitaxy of gallium nitride : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 905-907 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: GaN films have been grown by molecular beam epitaxy (MBE) using a hollow-anode nitrogen plasma source. The source was developed to minimize defect formation as a result of contamination and ion damage. The hollow-anode discharge is a special form of glow discharge with very small anode area. A positive anode voltage drop of 30–40 V and an increased anode sheath thickness leads to ignition of a relatively dense plasma in front of the anode hole. Driven by the pressure gradient, the "anode'' plasma forms a bright plasma jet streaming with supersonic velocity towards the substrate. Films of GaN have been grown on (0001) SiC and (0001) Al2O3 at 600–800 °C. The films were investigated by photoluminescence, cathodoluminescence, x-ray diffraction, Rutherford backscattering, and particle-induced x-ray emission. The film with the highest structural quality had a rocking curve width of 5 arcmin, the lowest reported value for MBE growth to date. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1146834
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 5
    Digitale Medien
    Digitale Medien
    Classical limits for quantum maps on the torus (1998)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 39 (1998), S. 1835-1847 
    Details
    ISSN: 1089-7658
    Quelle: AIP Digital Archive
    Thema: Mathematik , Physik
    Notizen: We provide a rigorous canonical quantization for the following toral automorphisms: cat maps, generalized kicked maps, and generalized Harper maps. For each of these systems we construct a unitary propagator and prove the existence of a well-defined classical limit. We also provide an alternative derivation of Hannay and Berry results for the cat map propagator on the plane. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.532266
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 6
    Digitale Medien
    Digitale Medien
    Diffusion of ion implanted boron in preamorphized silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2672-2674 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Transient enhanced diffusion of boron in preamorphized and subsequently regrown Si was studied by secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM). A comparison of 4 keV, 1× 1014/cm2 boron implants into crystalline and Ge+ preamorphized silicon was undertaken. Upon annealing the B+ implant into crystalline material exhibited the well-known transient enhanced diffusion (TED). In this case the peak of the boron distribution was relatively immobile and only B in the tail showed TED. In the second set of samples, the surface was first preamorphized by a 180 keV, 1×1015/cm2 Ge+ implant which produced an amorphous layer 2300 A(ring) deep, which then was implanted with boron. After implantation the tail of the B distribution extended to only 700 A(ring). Upon annealing, TED of the boron in the regrown Si was also observed, but the diffusion profile was very different. In this case the peak showed no clustering, so the entire profile diffused. The time for the TED to decay was around 15 min at 800 °C. TEM results indicate that the (311) defects in the end of range damage finish dissolving between 10 and 60 min at 800 °C. These results indicate that for these Ge preamorphization conditions, not only do the end of range defects not block the flow of interstitials into the regrown silicon, the (311) defects in the end of range damage act as the source of interstitials. In addition, boron does not appear to cluster in regrown silicon. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.116277
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 7
    Digitale Medien
    Digitale Medien
    Local conduction band offset of GaSb self-assembled quantum dots on GaAs (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1590-1592 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: GaSb self-assembled quantum dots grown by molecular beam epitaxy on GaAs exhibit a staggered (type II) band lineup with a potential barrier in the conduction band. Traditional methods cannot measure this local band offset because of the small (∼50 nm) lateral dot size. The nanometer resolution of ballistic electron emission microscopy is exploited to image individual dots and measure a local band offset of 0.08±0.02 eV. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.118624
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 8
    Digitale Medien
    Digitale Medien
    Thermal annealing characteristics of Si and Mg-implanted GaN thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2702-2704 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this letter, we report the results of ion implantation of GaN using 28Si and 24Mg species. Structural and electrical characterizations of the GaN thin films after thermal annealing show that native defects in the GaN films dominate over implant doping effects. The formation energies of the annealing induced defects are estimated to range from 1.4 to 3.6 eV. A 40 keV 1014 cm−2 Mg implant results in the decrease of the free-carrier concentration by three orders of magnitude compared to unimplanted GaN up to an annealing temperature of 690 °C. Furthermore, we have observed the correlation between these annealing-induced defects to both improved optical and electrical properties. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.116314
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...