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  • 1
    Electronic Resource
    Electronic Resource
    Ultrafast dynamics of holes in GaAs probed by two-color femtosecond spectroscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 64-66 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrafast relaxation dynamics of light and heavy holes in GaAs following femtosecond valence-to-conduction-band excitation are measured by probing the light- and heavy-to-split-off hole transitions at different midinfrared wavelengths using the recently developed broadly tunable femtosecond optical parametric oscillator. The initial relaxation times are less than 75 fs, and a spectral hole-burning effect is seen. The results suggest that carrier–carrier and optical-phonon scattering, in particular, polar optical-phonon scattering, are the primary processes leading to the initial redistribution of heavy and light holes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121724
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  • 2
    Electronic Resource
    Electronic Resource
    Switching dynamics of near-infrared vertical-cavity surface-emitting lasers by injection of near-infrared and midinfrared femtosecond pulses (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1664-1666 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the switch-off and recovery dynamics of a vertical-cavity surface-emitting semiconductor laser induced by injection of near-infrared or midinfrared femtosecond optical pulses. The laser is switched off by carrier-density depletion or carrier-heating effects, depending on the spectral range of the injected pulses. In both cases, the recovery of the laser output can be described by standard rate equations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124785
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  • 3
    Electronic Resource
    Electronic Resource
    Femtosecond midinfrared-induced luminescence study of the ultrafast dynamics of split-off holes in GaAs (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1734-1736 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ultrafast relaxation dynamics of split-off holes in GaAs are studied using a time-resolved two-wavelength excitation luminescence technique. Following valence-to-conduction-band transitions that are excited by near-infrared femtosecond pulses, delayed midinfrared femtosecond pulses are used to promote holes from the heavy-hole band to the split-off-hole band. The subsequent conduction-to-split-off-hole luminescence indicates that the room-temperature lifetime of split-off holes in GaAs is approximately 50 fs. The accompanying changes in conduction-to-heavy-hole-and-light-hole luminescence when holes are transferred to the split-off band are also observed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123671
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  • 4
    Electronic Resource
    Electronic Resource
    High-repetition-rate femtosecond optical parametric oscillator based on periodically poled lithium niobate (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3341-3343 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high-repetition-rate, femtosecond optical parametric oscillator based on bulk periodically poled lithium niobate is described. This optical parametric oscillator is continuously tunable from 1.12 to 1.50 μm in the signal branch, and signal pulses as short as 60 fs have been observed. The corresponding turning range for the idler branch is from 1.68 to 2.72 μm. Modifications which should result in a femtosecond optical parametric oscillator with a pumping threshold of less than 50 mW are discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119164
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