Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 64-66
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Ultrafast relaxation dynamics of light and heavy holes in GaAs following femtosecond valence-to-conduction-band excitation are measured by probing the light- and heavy-to-split-off hole transitions at different midinfrared wavelengths using the recently developed broadly tunable femtosecond optical parametric oscillator. The initial relaxation times are less than 75 fs, and a spectral hole-burning effect is seen. The results suggest that carrier–carrier and optical-phonon scattering, in particular, polar optical-phonon scattering, are the primary processes leading to the initial redistribution of heavy and light holes. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121724
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