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  • American Institute of Physics (AIP)  (3)
  • 2000-2004  (3)
  • 1
    Electronic Resource
    Electronic Resource
    A Monte Carlo study of the pattern formation during transitions in n-alkane crystals (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 7627-7633 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The rotator phase transition in n-alkane was recently found to show a characteristic pattern of preferred growth along the b-axis (shorter axis) of the unit cell. In order to investigate the origin of this anisotropic growth, a pattern formation in n-alkane crystal is studied during the transition between the low temperature orthorhombic (LO) phase and the rotator (R) phase by use of the Monte Carlo method. Of possible factors that will influence the growth pattern, we here concentrate on the mode of chain packing by assuming that the chains have rigid planar zigzag conformation and are placed in a regular orthohexagonal lattice. The herringbone order in the LO phase is found to develop rather quickly resulting characteristic domains with the (100) and (110) boundaries. The domain boundaries run preferentially along the b-axis at lower temperatures and are considered as a stacking fault or antiphase boundary. The transition between the LO phase and the R phase is found to exhibit a characteristic pattern, where the R phase domains grow preferentially along the b-axis. All these behaviors are shown to originate from different energies of the (100) and (110) boundaries. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.481357
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  • 2
    Electronic Resource
    Electronic Resource
    11B and 10B magic-angle spinning nuclear magnetic resonance studies of cubic boron nitride films prepared by plasma chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1734-1737 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 11B and 10B magic-angle spinning nuclear magnetic resonance (MAS NMR) spectroscopy was conducted to characterize cubic boron nitride films prepared by plasma chemical vapor deposition. Similarities and differences between cubic boron nitride films and polycrystals synthesized at high pressure and high temperature were clarified by chemical shift and linewidth. The same local structure and tetrahedral symmetry of boron atoms in both forms was demonstrated, and a higher defective density appeared to exist in the film form, agreeing well with results from Raman measurements. Noncubic-phase impurities, i.e., amorphous, turbostratic, and hexagonal phases, in films were also detected in 11B MAS NMR spectra, and the possibility of removing these impurities by chemical etching was demonstrated. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1338516
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  • 3
    Electronic Resource
    Electronic Resource
    Evidence for an additional noise source modifying conventional 1/f frequency dependence in sub-μm metal–oxide–semiconductor field-effect transistors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 380-382 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Flicker noise measurements for n-metal–oxide–semiconductor field-effect transistors have been carried out under a wide range of bias conditions. The experiments show excess noise over an ideal 1/f noise spectrum at around 1–10 kHz frequency range, which is independent of the drain voltage. The origin of the additional noise is the Shockley–Read–Hall generation–recombination process occurring near the drain in the channel. Monte Carlo device simulations confirmed the excess noise origin as well as the observed reduction of its magnitude with increasing gate voltage. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1339252
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