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  • American Institute of Physics (AIP)  (4)
  • 2010-2014  (1)
  • 2000-2004  (3)
  • 1
    Publication Date: 2014-08-27
    Description: Microbial fuel cells (MFCs) are promising devices for capturing biomass energy. Although they have recently attracted considerable attention, their power densities are too low for practical use. Increasing their electrode surface area is a key factor for improving the performance of MFC. Carbon nanotubes (CNTs), which have excellent electrical conductivity and extremely high specific surface area, are promising materials for electrodes. However, CNTs are insoluble in aqueous solution because of their strong intertube van der Waals interactions, which make practical use of CNTs difficult. In this study, we revealed that CNTs have a strong interaction with Saccharomyces cerevisiae cells. CNTs attach to the cells and are dispersed in a mixture of water and S. cerevisiae , forming a three-dimensional CNT conductive network. Compared with a conventional two-dimensional electrode, such as carbon paper, the three-dimensional conductive network has a much larger surface area. By applying this conductive network to MFCs as an anode electrode, power density is increased to 176  μ W/cm 2 , which is approximately 25-fold higher than that in the case without CNTs addition. Maximum current density is also increased to approximately 8-fold higher. These results suggest that three-dimensional CNT conductive network contributes to improve the performance of MFC by increasing surface area.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 7627-7633 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The rotator phase transition in n-alkane was recently found to show a characteristic pattern of preferred growth along the b-axis (shorter axis) of the unit cell. In order to investigate the origin of this anisotropic growth, a pattern formation in n-alkane crystal is studied during the transition between the low temperature orthorhombic (LO) phase and the rotator (R) phase by use of the Monte Carlo method. Of possible factors that will influence the growth pattern, we here concentrate on the mode of chain packing by assuming that the chains have rigid planar zigzag conformation and are placed in a regular orthohexagonal lattice. The herringbone order in the LO phase is found to develop rather quickly resulting characteristic domains with the (100) and (110) boundaries. The domain boundaries run preferentially along the b-axis at lower temperatures and are considered as a stacking fault or antiphase boundary. The transition between the LO phase and the R phase is found to exhibit a characteristic pattern, where the R phase domains grow preferentially along the b-axis. All these behaviors are shown to originate from different energies of the (100) and (110) boundaries. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1734-1737 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 11B and 10B magic-angle spinning nuclear magnetic resonance (MAS NMR) spectroscopy was conducted to characterize cubic boron nitride films prepared by plasma chemical vapor deposition. Similarities and differences between cubic boron nitride films and polycrystals synthesized at high pressure and high temperature were clarified by chemical shift and linewidth. The same local structure and tetrahedral symmetry of boron atoms in both forms was demonstrated, and a higher defective density appeared to exist in the film form, agreeing well with results from Raman measurements. Noncubic-phase impurities, i.e., amorphous, turbostratic, and hexagonal phases, in films were also detected in 11B MAS NMR spectra, and the possibility of removing these impurities by chemical etching was demonstrated. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Flicker noise measurements for n-metal–oxide–semiconductor field-effect transistors have been carried out under a wide range of bias conditions. The experiments show excess noise over an ideal 1/f noise spectrum at around 1–10 kHz frequency range, which is independent of the drain voltage. The origin of the additional noise is the Shockley–Read–Hall generation–recombination process occurring near the drain in the channel. Monte Carlo device simulations confirmed the excess noise origin as well as the observed reduction of its magnitude with increasing gate voltage. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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