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  • American Institute of Physics (AIP)  (5)
  • 2000-2004  (5)
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 1587-1594 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Vibrational relaxation in the electronic ground state initiated by intramolecular back-electron transfer (b-ET) of betaine-30 (B-30) is studied by picosecond time-resolved anti-Stokes Raman spectroscopy. Measurements were carried out with B-30 dissolved in slowly as well as in rapidly relaxing solvents. We observed a risetime of the Raman band with the highest frequency near 1600 cm−1 which is close to the b-ET time τb-ET of B-30. For B-30 dissolved in propylene carbonate (τb-ET∼1 ps), the population of this mode exhibits a rise time of 1 ps whereas vibrational populations between 400 and 1400 cm−1 increase substantially slower. In contrast, in glycerol triacetin (τb-ET∼3.5 ps) and in ethanol (τb-ET∼6 ps) rise times of all modes are close to the respective b-ET times. Within the first few picoseconds, direct vibrational excitation through b-ET is favored for modes with the highest frequencies and high Franck–Condon factors. Later on, indirect channels of population due to vibrational energy redistribution (IVR) become effective. Thermal equilibrium populations of the Raman active modes are established within 10 to 15 ps after optical excitation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 123-125 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The trap properties of the commonly used organic light-emitting diode emitter material tris-8-(hydroxyquinoline) aluminum (Alq3) have been investigated using thermally stimulated currents. Based on a model of the field dependence of the thermally stimulated currents, a trap density of 1.3×1017 cm−3 for depths ranging from 0.05 to 0.7 eV is obtained, indicating considerable influence on charge carrier statistics. A field-induced lowering of trap depth was observed and explained in the framework of the Poole–Frenkel effect. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate low-voltage inverted transparent vacuum deposited organic light-emitting diodes employing an indium-tin-oxide coated glass substrate directly as cathode and a semitransparent top Au thin film as anode. The devices comprise an intrinsic 8-tris-hydroxyquinoline aluminum (Alq3) emitting layer sandwiched in between n- and p-doped charge transport layer with appropriate blocking layers. They exhibit low driving voltages (∼4 V for a luminance of ∼100 cd/m2). The devices are about 50% transparent in the Alq3 emission region and emit green light from both sides with a total external current efficiency of about 2.5 cd/A. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of controlled n-type doping in molecular organic semiconductors: Naphthalenetetracarboxylic dianhydride is doped by cosublimation with the donor molecule bis(ethylenedithio)-tetrathiafulvalene. Electrical parameters are deduced from temperaturedependent measurements of the conductivity and the thermopower for various dopant concentrations. The results are compared to the predictions of a standard model commonly used for crystalline semiconductors. The Fermi level shifts towards the transport level, the conductivity is increased, and the mobility decreases with the doping ratio. © 2000 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 410-412 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the use of a p-doped amorphous starburst amine, 4, 4′, 4″-tris(N, N-diphenyl- amino)triphenylamine (TDATA), doped with a very strong acceptor, tetrafluoro- tetracyano-quinodimethane by controlled coevaporation as an excellent hole injection material for organic light-emitting diodes (OLEDs). Multilayered OLEDs consisting of double hole transport layers of p-doped TDATA and triphenyl-diamine, and an emitting layer of pure 8-tris-hydroxyquinoline aluminum exhibit a very low operating voltage (3.4 V) for obtaining 100 cd/m2 even for a comparatively large (110 nm) total hole transport layer thickness. © 2001 American Institute of Physics.
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