ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Deep states in silicon-on-insulator substrates prepared by oxygen implantation using current deep level transient spectroscopy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 871-873 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current deep level transient spectroscopy was applied using enhancement n-channel metal-oxide-semiconductor field-effect transistors fabricated in silicon-on-insulator substrates (prepared by oxygen implantation) to study the deep levels existing in the substrates. The current transients are not affected by the large series resistances which affect the measurement of capacitance transients on thin films. For the transistors used in this work a hole trap was found with energy ET=0.63 eV above the valence-band edge. The concentration and capture cross section of this state were estimated to be 1014 cm−3 and 10−16 cm2, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100099
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Sequential tunneling due to intersubband scattering in double-barrier resonant tunneling devices (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 212-214 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetoquantum oscillations in the tunnel current of double-barrier n-GaAs/(AlGa)As/GaAs/(AlGa)As/GaAs resonant tunneling devices reveal evidence of sequential tunneling in the voltage range corresponding to the resonance when electrons tunnel into the second subband of the GaAs quantum well. The sequential tunneling arises from intersubband scattering between two quasi-bound states of the well. Near this resonance, the charge buildup in the well can be estimated from the magnetoquantum oscillations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99522
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1323-1325 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the time and temperature dependence of the two prominent instability mechanisms in amorphous silicon thin-film transistors, namely, the creation of metastable states in the a-Si:H and the charge trapping in the silicon nitride gate insulator. The state creation process shows a power law time dependence and is thermally activated. The charge trapping process shows a logarithmic time dependence and has a very small temperature dependence. The results for the state creation process are consistent with a model of Si dangling bond formation in the bulk a-Si:H due to weak SiSi bond breaking stabilized by diffusive hydrogen motion. The logarithmic time dependence and weak temperature dependence for the charge trapping in the nitride suggest that the charge injection from the a-Si:H to the nitride is the rate limiting step and not subsequent conduction in the nitride.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100704
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Aerosol flow reactor production of fine Y1Ba2Cu3O7 powder: Fabrication of superconducting ceramics (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1622-1624 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An aerosol flow reactor operating at 900–1000 °C is used to prepare high-purity Y1Ba2Cu3O7 powders with a uniform chemical composition and a submicron to micron average particle size by thermally decomposing aerosol droplets of a solution consisting of the nitrate salts of Y, Ba, and Cu in a 1:2:3 ratio. The powders were at least 99% reacted based on thermogravimetric analysis, and the x-ray diffraction pattern is essentially that of Y1Ba2Cu3O7. Magnetic susceptibility measurements showed the powders to be superconducting with a transition at 90 K even for average reactor residence times as short as 20 s. Sintering cold-pressed pellets between 900 and 1000 °C provides dense, fine grained (average size on the order of 1 μm) superconducting ceramics with sharp 90 K transitions. The grain size and shape of a final sintered part could be varied depending on powder production, processing, and sintering conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99703
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Synchrotron radiation Bragg angle contour mapping of crack nucleation at grain boundaries (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2282-2288 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In technical materials a critical step leading to complete macroscopic failure is not the nucleation of cracks in isolated grains, but instead the transmission of rupture from grain to grain until the entire cross section is traversed. It is difficult, in general, to employ the usual microscopic observations which could provide the keys to a comprehensive mechanistic understanding of this problem. It is shown herein that monochromatic synchrotron radiation can be used to provide Bragg angular contour maps in a rapid and precise manner. These maps enable one to quantify the local strain field tensor associated with crack nucleation and propagation through a grain boundary. Based on this analysis it is then a straightforward process to determine the other mathematical properties usually associated with second rank tensors which lead to assessment of critical parameters for crack transmission at the boundary. The application of this analytical technique is experimentally demonstrated by studies of crack formation at grain boundaries in zinc bicrystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343416
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Low-energy proton detection by Pd metal-insulator-semiconductor diodes (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6839-6844 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been discovered that palladium-gated metal-insulator-silicon Schottky barrier diodes are very sensitive to fluxes of energetic protons in high vacuum. Data on the dosimetric response of the diodes to energetic protons are presented, along with data on the subsequent decay in the induced signal. A model for the response is developed, based on the response of similar structures to partial pressures of molecular hydrogen. The model involves adsorption sites at both the external Pd surface and the interface between Pd and SiO2, as well as known H absorption properties of bulk Pd. The sensitivity at 300 K of our diodes is about 109 protons (1011 cm−2). The inventory of protons stored in the bulk Pd, the surface, and at the interface indicates that the areal site density for the surface and interface is about 1015 cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341973
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Time-of-flight x-ray photoconductivity of HgI2 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4308-4310 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-of-flight photoconductivity measurements were performed on HgI2 using a penetrating, pulsed x-ray source, simulating the operation of photoconductive x-ray detectors. By examining a variety of HgI2 samples, a wide range of electron and hole mobilities were observed, but in all cases hole transport was highly localized, limiting the collection of the photocarriers in HgI2 detectors. The intrinsic photocarrier generation and recombination processes differed from classical Onsager and Langevin mechanisms observed in low-mobility photoconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339059
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Theory of response of radiation sensing field-effect transistors in zero-bias operation (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1216-1217 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation sensing field-effect transistors operated at zero bias show a low-dose response that is roughly linear in the thickness of the gate oxide. The same devices show a thickness squared dependence if a bias is applied during the irradiation. This effect can be explained by examining the effect of diffusion and electron trapping on the buildup of net positive charge in the gate oxide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337369
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Time-resolved optical emissions from high-current relativistic electron beams propagating in 150-mTorr air (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1866-1871 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of a time-resolved study of optical emissions from high-current relativistic (6.5 MeV) electron beams propagating in air at a pressure of 150 mTorr are presented. The emissions included N+ lines at λλ4803, 4630, 4552, and 4530 A(ring). Data were obtained on a single-shot basis by simultaneously recording the temporal history of all four ion lines. For propagating electron beam pulses, each ion line exhibited peak intensity a few microseconds after the passage of the 80-ns-wide electron pulse. This behavior is explained on the basis of inductive (magnetic) energy storage in the return current plasma channel. Spatially integrated plasma temperatures are measured to be in the 20 000–30 000 K range, reaching a maximum when the inductive energy storage has gone to zero.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336414
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Dual dielectric silicon metal-oxide-semiconductor field-effect transistors as radiation sensors (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1972-1976 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new design for radiation-sensing field-effect transistors (RADFETs) is presented, involving the use of very thick silicon nitride layers deposited on top of a high-quality thermal silicon dioxide. In contrast to previous RADFET fabrication procedures, no attempt was made to introduce hole traps into the thermal oxide. Instead the trapping layer at the nitride oxide interface was used to store the positive charge which forms the basis for operation of the RADFET. Data is presented which shows hole transport in the thermal oxide. Models explaining the field dependence of the response and the saturation behavior of the dual dielectric device are given. These RADFETs are more stable than any previously described in the literature and have a sensitivity of 86 μV/rad dose at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342887
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...