Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
85 (1999), S. 893-896
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The central-cell correction has been determined experimentally for the two donor impurities S and Si in GaAs. Data have been obtained for magnetic fields to 39 T, corresponding to γ(approximate)6. The observed behavior is in good agreement with theory. The analysis permits accurate evaluation of zero-field central-cell corrections, yielding 0.110 and 0.059 meV for S and Si, respectively. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.369351
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