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  • 2000-2004  (97)
  • 1930-1934  (8)
  • 1
    Electronic Resource
    Electronic Resource
    Modeling of poling behavior of ferroelectric 1-3 composites (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5040-5047 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Piezoelectric 1-3 composites are typically prepared from a polymer matrix and an unpoled Pb(ZrxTi1−x)O3 (PZT) based ceramic. During the subsequent poling process the PZT cannot strain freely due to the clamping by the surrounding polymer, which after poling results in the occurrence of residual mechanical stress in the composite. The poling process is investigated theoretically by a nonlinear finite element method modeling, which takes into account the ferroelectric and ferroelastic properties of PZT ceramics. Furthermore, an analytical model is developed, which predicts the remanent strain of the composite and the residual mechanical stress. The compressive residual mechanical stress acting on the PZT in the poling direction increases continuously with decreasing volume content va of the PZT ceramic. For values of va higher than about 20% it is lower than half of the coercive stress necessary to cause a mechanical depolarization. For va lower than 20% the residual stress rises rapidly. It may cause a mechanical depolarization of the PZT ceramic for va〈11%. With increasing volume content the longitudinal and the transversal components of the remanent strain increase monotonously in similar way like the corresponding linear effective piezoelectric coefficients. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359164
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  • 2
    Electronic Resource
    Electronic Resource
    Room-temperature and 50 GHz operation of a functional nanomaterial (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1357-1359 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate an artificial electronic nanomaterial, constructed by arrangement of nanometer-sized symmetry-breaking elements into a two-dimensional lattice. The material exhibits intrinsic nonlinear electronic functionality, and therefore functions also as a two-dimensional ratchet. We show that individual devices can be made by simply cutting pieces from the material. We also demonstrate that these devices operate at temperatures up to room temperature and at frequencies at least up to 50 GHz. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1398324
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  • 3
    Electronic Resource
    Electronic Resource
    High peak-to-valley ratios observed in InAs/InP resonant tunneling quantum dot stacks (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3232-3234 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant tunneling was observed through single InAs quantum dot (QD) stacks embedded in InP barriers with peak-to-valley ratios as high as 85 at 7 K. Negative differential resistance in the current–voltage [I(V)] characteristics was obtained up to a point above the temperature of liquid nitrogen. These features were observed in measurements on low-density QD stacks, in which a macroscopic ohmic contact covered less than 150 QD stacks. Due to the design of the structure, the upper QD in the stack has the function of a zero-dimensional emitter. Electrons easily fill the upper dot, whereas tunneling through the entire structure is only allowed when two states in the dots align energetically, resulting in sharp resonant tunneling peaks with high peak-to-valley ratios. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1374235
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  • 4
    Electronic Resource
    Electronic Resource
    Conductance oscillations induced by longitudinal resonant states in heteroepitaxially defined Ga0.25In0.75As/InP electron waveguides (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2274-2276 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured at low temperatures the conductance of electron waveguides fabricated from modulation-doped quantum wells by wet etching and regrowth. We have found that, for a waveguide with abruptly changed geometry at the entrance and exit, the conductance shows oscillations, which are superimposed on a conventional conductance plateau structure. The periods and amplitudes of conductance oscillations depend on the length to width aspect ratio of the waveguide. In addition, the amplitudes of conductance oscillations decrease with increasing temperature. We propose that the observed oscillations are caused by the formation of longitudinal resonant electron states in the waveguide, in analogy with optical Fabry–Perot effects. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126319
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of charged self-assembled quantum dots on two-dimensional quantum transport (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1704-1706 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of a layer of InAs quantum dots on the transport properties of a nearby two-dimensional electron gas (2DEG) in an InGaAs/InP quantum well is investigated. The probability of the scattering between edge states is found to increase as the distance between the layer of the dots and the 2DEG decreases. It is shown that Coulomb scattering by electrons in the charged quantum dots play an important role in the scattering between edge states. An effect of the electrons in the dots is to mediate scattering between spin-split edge states. This is demonstrated by showing that the overshoot effect in the quantum Hall regime is only present when the dots are charged with electrons. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126142
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  • 6
    Electronic Resource
    Electronic Resource
    Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1841-1843 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied GaP/GaAs/GaP and GaAsxP1−x/GaAs/GaAsxP1−x double-barrier resonant tunnelling diodes grown by metalorganic vapor phase epitaxy. We find that GaP tensile strained barriers in GaP/GaAs/GaP diodes may be grown with a barrier thickness below the critical thickness of about 12 monolayers. However, a corrugation of the strained barrier is observed by transmission electron microscopy. This variation may explain the low peak-to-valley ratio of the diodes (about 2). In contrast, GaAsxP1−x/GaAs/GaAsxP1−x resonant tunnelling diodes have been grown with a homogeneous thickness of the barriers, consequently showing a substantially improved electrical performance compared to the GaP diodes with peak-to-valley ratios 〉5. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459113
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  • 7
    Electronic Resource
    Electronic Resource
    Nonlinear operation of GaInAs/InP-based three-terminal ballistic junctions (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1384-1386 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on nonlinear electrical properties of three-terminal ballistic junctions (TBJs) based on high-electron-mobility GaInAs/InP quantum-well structures. Nonlinear electrical transport behavior of the TBJs is found, and we show a correlation between this behavior and the linear regime of electron transmission in the devices. We also study device geometry effects on these electrical properties of the TBJs. Finally, we demonstrate room-temperature operation of the devices. The results obtained are compared with recent predictions by Xu [H. Q. Xu, Appl. Phys. Lett. 78, 2064 (2001)] and good agreement is found. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1396626
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  • 8
    Electronic Resource
    Electronic Resource
    Designed emitter states in resonant tunneling through quantum dots (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2681-2683 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant tunneling through a single layer of self-assembled quantum dots (QDs) is compared to tunneling through two layers of vertically aligned (stacked) dots. The difference can be viewed as going from a two-dimensional emitter to a zero-dimensional emitter. The temperature dependence of current peaks originating in tunneling through individual QDs and individual stacks is used to clarify this point. In addition, we show that the statistical size distribution of self-assembled quantum dots causing the inhomogeneous broadening in luminescence experiments can be analyzed in a resonant tunneling experiment. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1469686
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  • 9
    Electronic Resource
    Electronic Resource
    Electron beam prepatterning for site control of self-assembled quantum dots (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1367-1369 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A site-control technique for individual InAs quantum dots (QDs), formed by self-assembling has been developed, using scanning-electron-microscope assisted nanodeposition and metalorganic vapor phase epitaxy. We find that the nanoscale deposits, created at the focal point of the electron beam on a semiconductor surface, act as "nanogrowth masks". Growth of a thin epitaxial layer produces nanoholes extending down to the deposits. The carbon deposits can be removed by oxygen plasma etching. When a compressively strained layer is deposited on this surface, QDs are self-organized at the hole sites, while no dots are observed in the flat surface region. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1351528
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  • 10
    Electronic Resource
    Electronic Resource
    Literatur (1932)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 90 (1932), S. 55-56 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01333547
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