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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of medicinal chemistry 28 (1985), S. 388-392 
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of medicinal chemistry 28 (1985), S. 958-960 
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1023-1025 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated that a buried gettering layer can be formed with a single MeV ion implantation without damaging the top device region. The strong gettering efficiency of carbon implant and its linear dependence on dose are confirmed. A surprising feature of the carbon implanted layers is that no extended defects are formed after annealing for implant doses up to 2×1016 cm−2 at 3 MeV, compared to a layer of small precipitates and dislocations in the case of oxygen implantation. It is suggested that the carbon-related gettering centers are point defects or their clusters.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 889-891 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gettering effects of implanted carbon for Au and Cu are studied and compared with the gettering effects of implanted oxygen, nitrogen, BF2, neon, and argon. It is demonstrated that implanted carbon forms strong gettering centers in silicon which are an order of magnitude more effective than implanted oxygen. The amount of gettered Au by implanted carbon is found to be approximately linear with dose in the range from 1015 to 1016 cm−2 and no thermal instability is observed with annealing up to 12 h at 1000 °C. It is found that the gettering effect of carbon is reduced by the addition of oxygen. This indicates that the strong gettering effect of carbon is not due to carbon-enhanced oxygen precipitation but a phenomenon of its own.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 893-897 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper presents a new growth kinetic model for thermal oxidation of silicon in dry oxygen, taking into account the effect of charged oxygen on the growth rate. Two parallel oxidizing species are assumed to be transported during oxidation, i.e., neutral ones via interstitial sites and charged ones through the network. The kinetic model has sufficient physical justifications and agrees with a recent dry oxidation study using 18O/16O sequential treatment. The model is found to correlate very well with experimental data at an O2 pressure of 1 atm in the temperature range 850–1000 °C in dry oxygen for both 〈100〉 and 〈111〉 silicon. Special emphasis is placed on the thin initial regime (10–300 A(ring)) where this model is in excellent agreement with the experiments. The maximum error does not exceed 0.2 A(ring)/min in the curve fitting.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 1174-1176 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We report how an induction cooker for household use can be modified for heating substrate or heating gases to high temperature in a chemical vapor deposition system. Only minor changes of the cooker are necessary. Stable substrate temperature as high as 900 °C was achieved with input power of about 1150 W.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 607-612 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a four-gun sputtering system which has been used successfully to prepare composition-modulated structures consisting of amorphous semiconductors and superconducting alloys or binary compounds. The substrates are mounted in ovens which can be individually heated to over 1000 °C. The ovens are mounted on a wheel which is driven by a computer-controlled stepping motor. With appropriate programming of the movement of the stepping motor, the deposition sequence is determined.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 28 (1985), S. 1881-1894 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of symmetric mirror systems, such as tandem mirrors and multiple mirrors (or equivalently, bumpy tori of large aspect ratio), is investigated when stabilization is attempted with high-energy particles. The analysis is derived from a zero Larmor radius variational form, and the stability criteria for eikonal and long wavelength layer modes are obtained. For eikonal modes it is shown that line bending can stabilize the low l-number modes and together with finite Larmor radius effects discussed elsewhere, complete stabilization is possible. For disk-shaped plasma pressure profiles it is shown that currents induced by conducting walls can stabilize the l=1 layer mode, while the higher-l layer modes require finite Larmor radius effects for stabilization. For thin, ring-like pressure profiles, wall stabilization of the l=1 mode cannot be achieved, although the line bending term reduces the core beta limit and the growth rate of low l-number layer modes. The coupling of the precessional mode of a plasma ring to the surface Alfvén wave in a multiple mirror plasma is also discussed.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 1 (1989), S. 826-839 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of a Migma disk is reexamined to determine the threshold to the interchange instability. It is shown that a previous calculation [Z. Naturforsch. Teil A 42, 1208 (1987)], which assumes a rigid mode eigenfunction, is inaccurate at the predicted particle number for marginal stability. As a result the integral equation for the system must be solved. A variational method of solution is developed and is shown to give good agreement with a direct numerical solution. The threshold for instability is found to be sensitive to the details of the distribution function. For highly focused systems, where all ions pass close to the axis, the threshold particle number (Nu1) for instability is substantially below that predicted by rigid mode theory (Nrigid) (by a factor ∼8ε2, where ε=r1/rL, r1 is the spread in the distance of closest approach to the axis, and rL the ion Larmor radius). At a higher density, a second band of stability appears that again destabilizes at yet a higher particle number (Nu2). If ε(very-much-less-than)1, Nu2 is substantially below the rigid mode prediction, while for 0.2〈ε〈0.3, Nu2 is comparable to the rigid mode prediction. At moderate values of ε (ε≈0.3–0.4) the second stability band disappears and the instability particle number threshold varies from the rigid stability threshold by a factor of 0.4ε, when ε=0.4, to 0.7ε when ε is about unity. The stability criteria would be consistent with the observed particle storage number obtained in experimental configurations if the spread in ε is sufficiently large.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 31 (1988), S. 706-707 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Kaufman's formula [Phys. Fluids 15, 1063 (1972)] for the first-order distribution function obtained via the action-angle formalism is shown to be correct. The proof requires that it be noted that the transformation from canonical coordinates to physical variables has terms of all orders. Neglect of this fact has led to an incorrect formula for the linear susceptibility in previous work.
    Type of Medium: Electronic Resource
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