ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1985-1989  (127)
  • 1
    Monograph available for loan
    Monograph available for loan
    London [u.a.] : Allen & Unwin
    Call number: G 8857
    Type of Medium: Monograph available for loan
    Pages: XVIII, 276 S. : Ill., graph. Darst.
    ISBN: 0045511314
    Location: Upper compact magazine
    Branch Library: GFZ Library
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    ISSN: 1432-1041
    Keywords: diflunisal ; pharmacokinetics ; healthy volunteers ; kidney failure ; rheumatoid arthritis ; aged subjects
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Summary The single-dose plasma kinetics of diflunisal was studied in healthy young and old subjects, in patients with rheumatoid arthritis, and in patients with renal failure. The plasma and urine kinetics of the glucuronidated metabolites of diflunisal were studied in the healthy elderly subjects and in the patients with renal failure. In addition, the multiple-dose plasma kinetics of diflunisal was assessed in healthy volunteers and in patients with rheumatoid arthritis. After a single dose of diflunisal the terminal plasma half-life, mean residence time and apparent volume of distribution were higher in elderly subjects than in young adults. No difference was observed in any pharmacokinetic parameter between age-matched healthy subjects and patients with rheumatoid arthritis. The elimination half-life of unchanged diflunisal was correlated with the creatinine clearance (r=+0.89) and its apparent total body clearance exhibited linear dependence on creatinine clearance (r=+0.78). In patients with renal failure, the terminal plasma half-life and mean residence time of diflunisal were prolonged. The renal and apparent total body clearances were lower, the mean apparent volume of distribution was higher and the mean area under the concentration-time curve extrapolated to infinity (AUC) was greater in the renal failure patients than in controls. The plasma concentration of the glucuronidated metabolites rapidly rose to levels above those of unchanged drug in renal patients, whereas they were lower than those of unchanged diflunisal in controls. The AUC (0–96 h) of diflunisal glucuronides in the patients was four-times that in controls, and the terminal elimination half-life of the glucuronides was prolonged in them. The renal excretion and clearance of diflunisal glucuronides were reduced when renal function was impaired. After multiple dosing, the pre-dose steady-state plasma-concentration increased with decreasing creatinine clearance (r=-0.79). When the plasma concentration exceeded 200 µmol·1−1, the elimination half-life was doubled, due to partial saturation of diflunisal conjugation. This finding suggests that lower doses could be used in long-term treatment. Thus, old age and arthritic disease appear to have little influence on the kinetics of diflunisal in the absence of renal functional impairment. Ordinary doses can be given for short term treatment of elderly patients with or without RA. In patients with renal failure, however, reduced doses of diflunisal are recommended.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Springer
    European journal of clinical pharmacology 34 (1988), S. 461-464 
    ISSN: 1432-1041
    Keywords: cyclosporin A ; organ transplantation ; immunosuppression ; systemic availability ; plasma concentrations ; intra-/interindividual variation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Summary We have measured total and unbound plasma concentrations of cyclosporin A in seven healthy men after single oral doses (12 mg per kg body weight) on two occasions at least two weeks apart. There was an up to two-fold intraindividual and a more than three-fold interindividual variation in the AUCs of both total and unbound drug. The intraindividual variability in the AUC of cyclosporin is similar to that of many other drugs and needs to be taken into account in the planning of pharmacokinetic studies.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6546-6551 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper analyzes a photoconductive switch design utilizing a static magnetic field to displace the optically generated electron-hole plasma to surfaces having high recombination velocities. It is demonstrated that this mechanism markedly speeds up the turnoff transient of the switch without affecting its conductance in the illuminated steady state.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 1484-1485 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: It follows from recent deductions of the HAM semiempirical MO method from density functional theory and Hartree–Fock, that HAM can be used to calculate electron affinities and core-excitation energies. As an example trans-butadiene is studied. Reasonable agreement with measurements is obtained.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4915-4923 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Computer simulation of the time-of-flight experiment in amorphous silicon p-i-n diodes is used to predict and interpret the terminal response following a transient strongly absorbed optical excitation. Numerical solutions and the associated physical interpretation illuminate the transport physics and the accuracy of the methods used to extract transport parameters. The interaction between free carriers and gap states is discussed on the basis of numerical results on the internal variable profiles. The influence on the transient photocurrent of band mobilities, transient trapping, and transient emission is investigated. Based on the interpretation of the computer solutions, certain analytical approximations are derived that allow extraction of parameters such as band mobilities, transition rates, and density of tail states.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1249-1253 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for finding the space-charge-layer thickness is developed based on the relevant device physics and on a space-charge-layer capacitance model which accounts for the effects of the free-carrier charges in the space-charge layer. Discrepancies of as much as 50% are predicted when the present model is compared with the conventional depletion model. A partitioned charge-based model is used to illustrated the usefulness of the model.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6369-6372 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper studies the thickness of silicon p-n junction space-charge regions at low temperature including the effects of doping-dependent dielectric permittivity ε(N), which is important for heavily doped semiconductor materials because of the presence of unionized impurity atoms that are subjected to polarization. The treatment is applicable for p-n junctions under all voltages and is not based on the conventional depletion approximation which assumes free carriers are negligible in the space-charge region. Comparison of the present thickness model including ε(N) and the conventional depletion model is included.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5563-5570 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We review and extend the theory and experimental practice of the electrical short-circuit current decay (ESCCD) method for determining the effective back surface recombination velocity S and minority-carrier lifetime τ in p-n junction solar cells and diodes. The ratio of minority-carrier diffusion length to base thickness plays a key role in the transient ESCCD response which in general is an infinite sum of decaying exponentials. Their amplitudes and decay constants depend on this ratio. If this ratio is much less than unity, the response decays in proportion to (t/τ)−3/2 exp(−t/τ) for times that can be explored experimentally. If this ratio exceeds unity, a single mode of exponential decay predominates. For all intermediate cases a multimode fitting procedure yields S and τ. We present, with illustrative measurements of solar cells, three different ways to improve accuracy of the ESCCD method: (a) observing the amplitude and the decay constant for different injection levels, (b) altering the device under study by replacing the low-high junction (or back-surface-field region) by an ohmic contact, and (c) combining the observed decay constant with results of low- or high-frequency small-signal-admittance measurements.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 285-287 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-low (HL) junctions form part of many semiconductor devices, including back surface field solar cells. A first experimental determination and interpretation of the voltage across the HL junction under low- and high-injection conditions is presented as a function of the voltage across a nearby p/n junction. Theoretical analysis from first principles is shown to bear well on the experimental results. In addition, a test structure is proposed for measurement of the effective surface recombination velocity at the HL junctions.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...