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  • 1
    Electronic Resource
    Electronic Resource
    Relaxation processes following excitation and ionization of SiF4 in the vicinity of the silicon 2p threshold. II. Dissociation of the molecular ions (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 7078-7086 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Partial ion yields from photoionization of SiF4 have been measured with time-of-flight mass spectrometry, photoion–photoion coincidence and triple photoion coincidence techniques using synchrotron radiation from 100 to 136 eV, in the region of the silicon 2p edge where strong resonances are found. From the photon energy dependence of positive ion pairs and of doubly charged fragment intensities, with a suitable normalization procedure, we have estimated the total double photoionization cross section. Below the Si2p edge, the double to single dissociative ionization branching ratio follows the resonance behavior, and is consistent with the photoelectron results of de Souza et al. (Paper I) and discussed in terms of multibond breaking dissociation pathways of residual excited ions (singly and doubly charged) produced by resonant Auger decay processes. Above the Si2p edge, the fragmentation is found to originate from dissociative double ionization occurring after normal Auger processes. The small additional contribution of triple dissociative ionization is consistent with a second order Auger process. In contrast, the underlying valence ionization continuum is responsible for all parent intensity and most of the SiF+3 fragment expected from the normal dissociative ionization channels. The measurement of appearance energies of fragment ion pairs by the photoion–photoion coincidence method, offers a direct measurement of the first direct double ionization onset in SiF4 and new values for other dissociative SiF2+4 states which complement those found by Auger spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456236
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  • 2
    Electronic Resource
    Electronic Resource
    Vibrational state mixing of individual rotational levels in 1-butyne near 3333 cm−1 (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 4569-4578 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The high resolution infrared spectrum of jet-cooled 1-butyne is reported for the acetylenic C–H stretch. The absorbance of an F-center laser beam is enhanced by a multiple reflection cell surrounding the free jet. Although the spectrum in the gas phase (300 K) is a featureless rotational contour, at 3 K sharp features are observed. For J'=0, 1, 2, the K'a =1 lines are spectroscopically well-behaved, but the Ka =0 lines are split into multiplets. Analysis of the K'a =1 lines gives the constants (B'+C')/2=0.143 82(11) cm−1, (B'−C')/2=0.007 20(11) cm−1, and ν0+A'−A‘=3333.0182(9) cm−1. The quantities in parentheses are two standard deviations in units of the last digit. It is concluded that the Ka =0 levels are mixed with the bath of background vibrations by anharmonic matrix elements the order of 0.01 cm−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.453769
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  • 3
    Electronic Resource
    Electronic Resource
    Relaxation processes following excitation and ionization of SiF4 in the vicinity of the silicon 2p threshold. I. Electronic relaxation processes (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 7071-7077 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photoelectron and Auger spectra of SiF4 have been measured, using synchrotron radiation in the 100 to 125 eV photon energy range in the vicinity of the Si2p ionization threshold. Partial photoionization cross sections have been obtained for outer, inner valence states and satellite states in the same energy range, together with the threshold photoelectron spectrum. At the energies of the discrete resonances observed below 112 eV, the core excited molecule is found to decay mostly by resonant Auger and to a small extent by autoionization. Among the resonant Auger pathways, those in which two electrons (rather than one) are ejected are found to play a dominant role. Above threshold, especially around the energy of the first continuum resonance, normal Auger processes are observed. Also, we offer a new interpretation of the Auger spectrum based on large configuration interaction in the final state and on the screening of the Si2p hole by the lone-pair electrons of the fluorine atoms. We also find some evidence of cascade Auger processes which explain the formation of triply ionized molecules.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456235
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  • 4
    Electronic Resource
    Electronic Resource
    Angle resolved photoelectron study of resonances near the Si 2p edge of the Si(CH3)4 molecule (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 492-498 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Photoelectron spectra of tetramethylsilane, were measured at selected photon energies in the vicinity of the Si 2p edge, using synchrotron radiation. In addition to known valence and core Si 2p bands, three LVV Auger lines (69, 76, and 80 eV electron energy) were observed for the first time. Partial and differential cross sections for the Si 2p band and two of the Auger lines have been measured at several photon energies from the Si 2p onset up to 135 eV. An intense resonance is evident in the Si 2p continuum as well as in the LVV Auger decay channels. Its position, right above threshold, accounts for only a part of the absorption feature. Another maximum, already seen in absorption around 124 eV, may be a shape resonance associated with the Si 2p continuum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.449511
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  • 5
    Electronic Resource
    Electronic Resource
    Prolonged and rapid thermal annealing of boron implanted silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2696-2699 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the annealing of silicon substrates implanted with a medium dose of boron ions (3×1014 cm−2, 150 keV) employing conventional furnace annealing (FA) and rapid thermal annealing (RTA) processes performed in a nitrogen atmosphere. The annealing efficiency was monitored by visual inspection of the implanted surface with an optical microscope after steam oxidation and Secco etching. The FA is more efficient when performed at a high temperature, but even so, it is not capable of suppressing completely the implantation damage. On the other hand, the RTA was observed to be more efficient than any FA cycle. We discuss this fact taking into account the influence of the very high heating rates (∼250 °C/s) the samples underwent during the RTA cycle on the annealing behavior of implantation damage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341610
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  • 6
    Electronic Resource
    Electronic Resource
    Microprocessor-based system for automatic x-ray diffraction and fluorescence (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1972-1972 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A system based on a Z-80 microprocessor is used for x-ray analysis and goniometer control.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138406
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  • 7
    Electronic Resource
    Electronic Resource
    New silicon-related deep broadband luminescence emission in Al0.3Ga0.7As epitaxial layers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 444-447 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Luminescence spectra of variously silicon-doped Al0.3Ga0.7As (Al0.3Ga0.7As@B: Si) single layers grown by molecular-beam epitaxy were investigated as a function of silicon effusion-cell temperature. A correlation between silicon incorporation as a complex involving SiAs and the existence of a deep broadband emission is suggested. To achieve this, in addition to photoluminescence, Hall effect, capacitance, and secondary ion mass spectroscopy measurements were also performed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341216
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  • 8
    Electronic Resource
    Electronic Resource
    Structure and composition of amorphous Ge1−xSnx thin films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5596-5598 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The composition and bonding configuration of amorphous germanium-tin (a-Ge1−xSnx) thin films are reported (0≤x〈0.3). Mössbauer spectroscopy analyses show that under the reported deposition conditions all tin atoms enter the a-Ge network in a perfect substitutional way, i.e., in a covalent tetrahedral configuration. The absence of defect structures in the tin sites is discussed and compared with results on films prepared under different conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340338
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  • 9
    Electronic Resource
    Electronic Resource
    Dopants redistribution during titanium-disilicide formation by rapid thermal processing (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1228-1230 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Redistribution of implanted As (5×1015 cm−2, 150 keV) and Sb (1×1015 cm−2 , 200 keV) due to TiSi2 formation by rapid thermal processing was investigated by means of backscattering spectroscopy. By choosing properly the rapid thermal processing parameters, low resistance uniform silicides layers (typically 14 μΩ cm) were obtained, and dopant loss by out-diffusion and redistribution of the dopant were made negligible. High peak concentrations of dopant within silicon substrate, beneath the silicide, were obtained for all processing times.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338177
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  • 10
    Electronic Resource
    Electronic Resource
    Mass and energy dependence of implanted ion profiles in the AZ111 photoresist (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1322-1324 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Profiles of Bi, Xe, Sn, Kr, Ga, Fe, K, Ar, P, Na, and F implanted into the AZ111 photoresist are compared with recent theoretical predictions. With the exception of the noble gases and F, the experimental results are well fitted by the Biersack–Haggmark [Nucl. Instrum. Methods 174, 257 (1980)] Monte Carlo calculations. For the noble gases we obtain ranges up to a factor of 2 shorter than the above predictions. Fluor changes the profile as function of energy, being nearly Gaussian at 30 keV and distributing according to the calculated ionization at 70 keV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337304
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