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  • American Institute of Physics (AIP)  (118)
  • Nature Publishing Group  (59)
  • Periodicals Archive Online (PAO)  (31)
  • 1985-1989  (208)
  • 1
    Electronic Resource
    Electronic Resource
    Effects of Al and Ti interlayers on Sb/(HgCd)Te interface behavior (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3435-3440 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of 0.1 and 0.5-nm Al and 0.02-nm Ti interlayers on the Sb/(HgCd)Te system have been investigated with photoelectron spectroscopy using synchrotron radiation. With no interlayer, the Sb forms an abrupt, uniform overlayer with a stoichiometric interface and causes no change in the band bending induced during the cleaving process. With the two Al interlayers Sb exhibits less uniform deposition and diffuses into the semiconductor enough to reverse the additional band bending caused by Al in-diffusion. It also reacts with the elemental Al of the 0.5-nm interlayer to form AlSb. The increased disruption of the (HgCd)Te surface by the Ti interlayer leads to enhanced out-diffusion of Te in addition to Sb clustering and in-diffusion. In this case, Sb is able to compensate for the inversion occurring during cleavage and returns the surface to a nearly flat-band condition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342662
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  • 2
    Electronic Resource
    Electronic Resource
    SiGe/Si superlattices on implanted buried-oxide structures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1505-1509 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In an attempt to reduce the number of threading dislocations propagating through a silicon epitaxial layer grown on an implanted buried-oxide structure, a SiGe/Si superlattice was placed between the initial silicon surface layer and the subsequently grown silicon epitaxial layer. Both the superlattice and the silicon epitaxial layer were formed by molecular-beam epitaxy. Some of the threading dislocations are bent parallel to the superlattice as they propagate through the structure. Some of these are annihilated by interacting with other dislocations while others bend toward the surface again after propagating parallel to the superlattice for some distance. The effect of the superlattice is limited, and many of the dislocations continue propagating through the superlattice toward the surface of the silicon epitaxial layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342965
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  • 3
    Electronic Resource
    Electronic Resource
    Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2672-2679 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality, monocrystalline 6H-SiC thin films have been epitaxially grown on 6H-SiC {0001} substrates which were prepared 3° off-axis from 〈0001〉 towards 〈112¯0〉 at 1773 K via chemical vapor deposition (CVD). Essentially, no defects were generated from the epilayer/substrate interface as determined by cross-sectional transmission electron microscopy (XTEM). Double positioning boundaries which were observed in β-SiC grown on 6H-SiC substrates were eliminated as confirmed by plan-view TEM. A strong dependence of the surface morphology of the as-grown thin films on the tilting orientation of the substrates was observed and reasons for this phenomenon are discussed. The unintentionally doped 6H-SiC thin films always exhibit n-type conduction with a carrier concentration on the order of 1016 cm−3. Au-6H-SiC Schottky barrier diodes were fabricated on the CVD 6H-SiC thin films and it was found that the leakage current at a reverse bias of 55 V was only 3.2×10−5 A/cm2. This is compared to SiC films grown on other substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341608
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical properties of ion-implanted p-n junction diodes in β-SiC (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 922-929 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mesa structure junction diodes prepared via high-temperature ion implantation of Al+ (100 keV, 4.8×1014 Al/cm2) in n-type or N+ (90 and 180 keV, 0.9 and 1.3×1014 N/cm2) in p-type β-SiC thin films were electrically characterized as a function of temperature using current-voltage and capacitance-voltage measurements. In either case, rectification was observed to the highest measurement temperature of 673 K. Closer examination of the device current-voltage characteristics yielded diode ideality factors greater than 2. Additionally, the log dependence of these two parameters indicated space-charge-limited current in the presence of traps as the dominant conduction mechanism. From the temperature dependence of log-log plots, trap energies and densities were determined. Two trapping levels were observed: (1) 0.22 eV with a density of 2×1018 cm−3 and (2) 0.55 eV with a density of 2×1016 cm−3. The former is believed to be ionized Al centers (in the case of Al-implanted sample) and the latter a compensating acceptor level, both of which lie within the bottom third of the band gap. Reverse currents at low biases were characteristic of generation in the depletion region. At intermediate biases an ohmic dependence was observed, whereas at high biases the current appeared to be space-charge limited. Capacitance-voltage measurements indicated both types of diodes were abrupt junctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340034
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  • 5
    Electronic Resource
    Electronic Resource
    Optical, mechanical, and thermal properties of barium borate (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1968-1983 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements of all the material constants necessary to fully characterize barium borate as a nonlinear optical material. All data was taken on crystals supplied by Professor Chuangtien Chen, Fuzhou, People's Republic of China. We have determined the crystal structure, the optical absorption, the refractive indices from the UV to the near IR, the thermo-optic coefficients, the nonlinear optical or coefficients, the resistance to laser damage, the elastic constants, the thermal expansion, thermal conductivity and dielectric constants, and the fracture toughness. This data is used to evaluate barium borate for a variety of applications. We find that, in general, barium borate has a low acceptance angle, and that despite its higher optical nonlinearity, it is therefore not significantly more efficient than other commonly available materials, except in the UV below 250 nm. On the other hand, it has a high damage threshold, it is physically robust, it has good UV and IR transparency, and it has excellent average power capability. It permits deep UV generation, and has great potential for generating tunable visible and IR light as an optical parametric amplifier.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339536
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  • 6
    Electronic Resource
    Electronic Resource
    Photoluminescence spectroscopy of ion-implanted 3C-SiC grown by chemical vapor deposition (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2011-2016 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence (PL) spectroscopy has been used to characterize as-grown and ion-implanted 3C-SiC films grown by chemical vapor deposition on Si(100) substrates. The D1 and D2 defect PL bands reported previously in ion-implanted Lely-grown SiC were also observed in the as-grown chemical vapor deposited films, and the effects of annealing (1300–1800 °C) on these PL bands as observed in as-grown films and films implanted with B, Al, or P have been studied. As reported previously for Lely-grown SiC, the spectral details of the defect PL bands and their annealing characteristics were found to be independent of the particular implanted-ion species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337997
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  • 7
    Electronic Resource
    Electronic Resource
    Raman scattering by coupled plasmon-phonon modes in n-type Ga1−xAlxAs epitaxial layers (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 231-233 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering by coupled plasmon-phonon modes in Ga0.75Al0.25As epitaxial layers grown by molecular beam epitaxy and metalorganic chemical vapor deposition was studied. Good agreement between predicted and observed behavior was found. It was concluded that Raman scattering can be conveniently used for nondestructive and fast evaluation of free electron concentration in these materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336869
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  • 8
    Electronic Resource
    Electronic Resource
    Decay kinetics of photoconductivity of PbSnTe doped with indium (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4618-4620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temporal decay of persistent photoconductivity in PbSnTe films doped with indium were fit using a phenomenological model featuring a quasi-Fermi level-dependent activation energy. The resulting decay curves are nonexponential with a very fast initial relaxation followed by a slower decay due to an increase in the effective activation energy as the quasi-Fermi level decreases. Numerical solutions to the rate equation governing the relaxation were used to fit the data with excellent results. The activation energy in the limit of low carrier densities is found to be 24 meV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336230
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  • 9
    Electronic Resource
    Electronic Resource
    Rate-dependent plasticity of copper and stainless steel under shock compression (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1951-1960 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental copper and stainless-steel particle velocity profiles are analyzed to determine the plastic strain, plastic strain rate, and deviatoric stress through the shock front. A steady-wave shock analysis is used, together with a numerical characteristics-code calculation to correct for reflections created when the steady wave passes through the sample-window interface. The results are well represented by power-law relations giving the plastic strain rate as powers of the deviatoric stress and plastic strain. The effects of the sample-window interface are found to be minor for windows closely matched in impedance to the sample. The effects of the window on the strain-rate relation are appreciable only near peak compression.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344331
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  • 10
    Electronic Resource
    Electronic Resource
    Point-of-use arsine generation for organometallic vapor-phase epitaxial growth (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1185-1189 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for the continuous generation of arsine as required for organometallic vapor-phase epitaxial growth is described. Arsine is generated through the reduction of arsenic trichloride by lithium tetrahydridoaluminate in a nonvolatile ether. Reaction conditions appropriate for steady-state operation, necessary for this application, have been established. Arsenide conversion efficiencies in excess of 95% have been consistently demonstrated with arsine flows up to 100 μmol/min. GaAs grown using generated arsine exhibits a 77-K carrier concentration of 1.29×1015 cm−3 and mobility of 33 000 cm2/V s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343460
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