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  • American Institute of Physics (AIP)  (9)
  • 2000-2004  (1)
  • 1985-1989  (8)
  • 1
    Electronic Resource
    Electronic Resource
    Electron-impact ionization cross sections of the SiF3 free radical (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 4035-4041 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Absolute cross sections for electron-impact ionization of the SiF3 free radical from threshold to 200 eV are presented for formation of the parent SiF+3 ion and the fragment SiF+2, SiF+, and Si+ ions. A 3 keV beam of SiF3 is prepared by near-resonant charge transfer of SiF+3 with 1,3,5-trimethylbenzene. The beam contains only ground electronic state neutral radicals, but with as much as 1.5 eV of vibrational energy. The absolute cross section for formation of the parent ion at 70 eV is 0.67±0.09 A(ring)2. At 70 eV the formation of SiF+2 is the major process, having a cross section 2.51±0.02 times larger than that of the parent ion, while the SiF+ fragment has a cross section 1.47±0.08 times larger than the parent. Threshold measurements show that ion pair dissociation processes make a significant contribution to the formation of positively charged fragment ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.454836
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  • 2
    Electronic Resource
    Electronic Resource
    Electron impact ionization cross sections of SiF2 (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 4042-4047 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Absolute cross sections are measured for electron impact ionization and dissociative ionization of SiF2 from threshold to 200 eV. A fast (3 keV) neutral beam of SiF2 is formed by charge transfer neutralization of SiF+2 with Xe; it is primarily in the ground electronic state with about 10% in the metastable first excited electronic state (a˜ 3B1). The absolute cross section for ionization of the ground state by 70 eV electrons to the parent SiF+2 is 1.38±0.18 A(ring)2. Formation of SiF+ is the major process with a cross section at 70 eV of 2.32±0.30 A(ring)2. The cross section at 70 eV for formation of the Si fragment ion is 0.48±0.08 A(ring)2. Ion pair production contributes a significant fraction of the positively charged fragment ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.454837
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  • 3
    Electronic Resource
    Electronic Resource
    Rotational structure in an excited vibronic band of the dipole-supported state of cyanomethyl anion, CH2CN− (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 68-73 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Previous reports of threshold resonances occurring in the photodetachment spectra of molecular anions have provided detailed information about the nature of dipole-supported states and the dynamics of autodetachment from the vibrationless level. In this paper we report the first observation and analysis of rotational band structure in an excited vibrational level of a dipole-supported state. The 1 cm−1 resolution laser photodetachment spectrum of cyanomethyl anion (CH2CN−), the conjugate base of acetonitrile, was recorded in the 12 500–13 700 cm−1 region using ion cyclotron resonance spectrometry. Rotational assignment of the resonances occurring in this region provides evidence for vibrational-to-electronic coupling in the autodetachment process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456468
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  • 4
    Electronic Resource
    Electronic Resource
    Absolute cross sections for electron-impact ionization and dissociative ionization of the SiF free radical (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 823-829 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Absolute cross sections for electron-impact ionization of the SiF free radical from threshold to 200 eV are presented for formation of the parent SiF+ ion and the fragment Si+ and F+ ions. A fast beam of SiF is prepared by charge transfer neutralization of an SiF+ beam. The radicals form in the ground electronic state and predominantly in their ground vibrational state, as shown by agreement of the measured ionization threshold with the ionization potential. The absolute cross section for SiF→SiF+ at 70 eV is 3.90±0.32 A(ring)2. The ratio of cross sections for formation of Si+ to that for SiF+ at 70 eV is 0.528±0.024; the ratio for formation of F+ to that of SiF+ is 0.060±0.008. The observed threshold energy for Si+ formation indicates the importance of ion pair formation SiF→Si++F−. Breaks in the cross section at 14.3 and 17 eV are assigned as dissociative ionization thresholds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.454161
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  • 5
    Electronic Resource
    Electronic Resource
    Capacitance bridge detector and signal lock for ion cyclotron resonance spectrometry (1987)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 1460-1463 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The design and operational characteristics of a capacitance bridge detector and accompanying signal lock system are presented. The signal lock is especially well suited for the measurement of small changes in ion concentration during photochemical experiments, thereby alleviating problems caused by resonant frequency shifts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139433
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  • 6
    Electronic Resource
    Electronic Resource
    A dipole-supported state in cyanomethyl anion, the conjugate base of acetonitrile. Rotational band assignments in the electron photodetachment spectrum of −CH2CN (1986)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 84 (1986), S. 5284-5289 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report the 1 cm−1 resolution electron photodetachment spectra of cyanomethyl anion and its deuterated analog, trapped and detected in an ion cyclotron resonance spectrometer. Many sharp resonances were observed in the threshold region corresponding to rovibrational transitions from the ground electronic state to a dipole-supported state of the anion which subsequently undergo electron autodetachment. An assignment of the rotational transitions has been carried out, yielding rotational constants. Using spectral band intensities, we have estimated the electron binding energy of the dipole-supported state as 0.020 (±0.006) eV. The adiabatic electron affinities of the neutral radicals ⋅CH2CN and ⋅CD2CN are found to be 1.560±0.006 and 1.549±0.006 eV, respectively. Features of the dipole-supported state in this system have been compared to those in acetaldehyde enolate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.449938
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  • 7
    Electronic Resource
    Electronic Resource
    Epitaxy of CoSi2 on Si (111) at low temperature (≤400 °C) (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1384-1386 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth of thin CoSi2 films on a Si(111) surface has been studied using surface techniques such as low-energy electron diffraction and photoemission spectroscopy. Various preparation methods at low temperature (≤400 °C) are investigated. Both layer by layer growth and coevaporation invariably exhibit a bulk and surface excess of Si. In contrast a different preparation method where the Co atoms were evaporated onto the Si(111) substrate maintained at ∼360 °C produces CoSi2 films exposing a Co-rich CoSi2 surface without any Si excess in bulk. It is concluded from these experiments that at ∼360 °C diffusion of Si from substrate through the CoSi2 layer is much easier than usually expected and quite sufficient to sustain further CoSi2 growth without any extra Si supply.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100456
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  • 8
    Electronic Resource
    Electronic Resource
    Near-infrared acousto-optic tunable filter based instrumentation for the measurement of dynamic spectra of polymers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 2153-2158 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The use of an acousto-optic tunable filter spectrometer can simplify the instrumental requirements for the collection of time resolved spectra to measure the difference in absorbance of polarized radiation due to chemical functional group orientation of a polymer as it undergoes repetitive oscillatory strain. The rapid data collection achieved in the near-infrared spectral region rivals that of current interferometric instruments. Achieving a good signal to noise ratio requires only a singly modulated optical signal, and the use of digital filtering eliminates the requirement of phase sensitive detection. The usefulness of this instrument for routine testing of polymers is demonstrated by differentiating polymers of the same chemical composition but different rheology and by determining the effect of varying the concentration of monomers in a copolymer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1355265
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  • 9
    Electronic Resource
    Electronic Resource
    Resistivity of AuIn2+δ thin films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2041-2045 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resistivity and residual resistance ratio of 31-nm films of AuIn2+δ have been measured for a series of precision vacuum-deposited films covering the range of −0.04≤δ≤0.12. Both the resistivity and the resistance ratio exhibit a strongly peaked dependence on δ around δ=0. The results are analyzed in terms of the Mayadas–Shatzkes theory of scattering in thin films which includes the effects of both surface and grain boundary scattering. The dominant contribution to the resistivity is due to grain boundary scattering. The grain boundary scattering coefficient is unusually large compared to published results on single-phase metal films. These findings are interpreted in relation to the structure of the films and to the presence of second-phase material (AuIn or In) in the grain boundaries.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337206
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