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  • 1990-1994  (18)
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  • 1
    Electronic Resource
    Electronic Resource
    Vacuum deposition of nonlinear chromophore-polymer composite thin films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 533-535 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Novel nonlinear composite thin films containing 4-dialkylamino-4'-nitro-stilbene (DANS) and Teflon AF 1600 have been deposited by vacuum evaporation techniques. Pure DANS thin film, due to its centrosymmetric crystal structure, does not exhibit any electro-optic effect. However, composite thin films of DANS and Teflon AF 1600 with a DANS concentration of 5%–25% (by volume) do exhibit an electro-optic effect after poling. Their electro-optical coefficients are measured to be as large as 2.4 pm/V. X-ray diffraction shows that these composite thin films are in an amorphous state as-deposited as well as after poling. It is argued that the DANS molecules are in their molecular form embedded in the Teflon AF amorphous matrix, thereby allowing the effect of their large molecular hyperpolarizability to be detected. The characterization of the thin films using scanning electron microscopy is also presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111966
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  • 2
    Electronic Resource
    Electronic Resource
    Study of silver diffusion into Si(111) and SiO2 at moderate temperatures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1392-1396 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of Ag from epitaxial layers into Si(111) is studied under an anneal of 450–500 °C using the secondary ion mass spectrometry depth profiling tool. The measurements yielded values of the diffusion constant (0.80–1.6 × 10−15 cm2/s) which fall short of literature values extrapolated from higher-temperature Arrhenius laws. Diffusion of Ag into SiO2 was also measured directly. The observed diffusivity of 1.0 × 10−15 cm2/s is a factor of ∼ 105 smaller than expected from previous determinations of the diffusivity of Ag+ in SiO2 obtained from anneals in forming gas. The discrepancy may be due to changes in the local electrostatic environment in the absence of acceptor levels in SiO2 from dissolved gases which are absent in vacuum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349547
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  • 3
    Electronic Resource
    Electronic Resource
    Growth of epitaxial Ag/Si films by the partially ionized beam deposition technique (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 773-777 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The observation of room-temperature epitaxy of vapor-deposited thin Ag films on Si(111) accomplished under conventional vacuum conditions is reported. Epitaxy was also observed at 350 °C. The films were deposited using a partially ionized beam deposition system, and were typically 1500 A(ring) thick. Epitaxy was confirmed via pole-figure analysis. Scanning electron microscopy revealed excellent surface flatness even for the room-temperature films. Contrary to previous observations, the growth was found to proceed by the layer mode, even at the elevated temperature. This change in morphology is attributed to the enhanced density of nucleation sites due to the energetic ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347363
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  • 4
    Electronic Resource
    Electronic Resource
    Intrinsic Cu gettering at a thermally grown SiO2/Si interface (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3313-3316 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiO2 film of 1500-A(ring) thickness has been grown by a conventional thermal dry oxidation process on commercial Si(111) and Si(100) wafers. A secondary-ion mass spectrometry study of the SiO2/Si structure showed that a gettering of Cu atoms, which were present in the Si wafers as residual impurities, has occurred at the SiO2/Si interface due to the thermal dry oxidation process. The areal concentration of the Cu atoms at the interface has been found to depend on the Cu concentration in the Si wafers. Areal concentrations in order of 1×1012/cm2 were measured at the interfaces. Facilitated by the high diffusivity of Cu in SiO2 and Si, the gettering is thermodynamically driven by the low solid solubility of Cu, either in SiO2 at the temperature range up to the oxidation temperature, or in Si at low temperatures as the wafers cool down. The defects generated at the SiO2/Si interface provide the nucleation sites for the Cu gettering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346383
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  • 5
    Electronic Resource
    Electronic Resource
    Secondary ion mass spectrometry study of the thermal stability of Cu/refractory metal/Si structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6719-6721 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Evidence is presented for the blocking of Cu diffusion into SiO2 and Si by Ta and Ta/W barriers. The anneal was performed at 450 °C for 30 min. Here, W is rejected as a potential barrier for Cu technology. A Cr layer as thin as 200 A(ring) is shown to limit diffusion into Si to ∼600 A(ring). The study also demonstrates the utility and versatility of secondary ion mass spectrometry for evaluating potential diffusion barriers, and the need for such corroborative characterization in light of the lesser sensitivity of Rutherford backscattering spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348973
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  • 6
    Electronic Resource
    Electronic Resource
    Study of interface impurity sputtering in partially ionized beam deposition of Cu on Si (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3619-3624 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cu thin films have been deposited on Si(111) substrate using partially ionized deposition technique in which the self-ions, i.e., the ions derived from the depositing materials themselves, are being used to concurrently bombard the substrate surface during thin film growth. The ion percentage in the deposition beam is in the range from 0% to 5% with the ion energy varying between a few eV and several keV. The Si(111) substrates are chemically cleaned by a RCA cleaning process before loading into the vacuum chamber of deposition. No in situ cleaning of the substrate surface is performed prior to deposition. A reduction of impurities such as oxygen, carbon, and hydrogen at the Cu/Si interface is observed as a function of the ion bombardment parameters using secondary-ion mass spectrometry. The estimates of the sputtering cross section of oxygen, carbon and hydrogen at the Cu/Si interface by Cu ions and their energy dependence are discussed in the framework of mechanisms of the impurity sputtering by low-energy ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346323
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  • 7
    Electronic Resource
    Electronic Resource
    Interaction of amorphous fluoropolymer with metal (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 508-510 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bonding structure of an amorphous fluoropolymer, AF 1600, with Al, Ag, Au, and Cu were examined using x-ray photoelectron spectroscopy. 100 A(ring) thick films of AF 1600 were deposited on various metal films. AlF3 was found at the AF 1600/Al interface. F detached from the −CF3 functional group of the AF 1600, diffused into the Al/Al2O3 matrix and formed AlF3. The diffusion depth of F is estimated to be (approximately-greater-than)150 A(ring). An Al film was evaporated onto an AF 1600 film. The Al film was then mechanically peeled off and the remaining polymer surface examined. AlF3 was again found. For the spin-on AF 1600 film on Ag, Au, and Cu, no chemical reaction between the metal and the polymer were found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112281
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  • 8
    Electronic Resource
    Electronic Resource
    Low-resistivity Cu thin-film deposition by self-ion bombardment (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 198-200 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An anomalous reduction of the thin-film resistivity has been observed in the Cu deposition at room temperature using a partially ionized beam in which the self-ions are used to bombard the substrate surface during growth. A minimum thin-film resistivity of 1.83 μΩ cm has been obtained at 2 kV substrate bias voltage with an ion percentage of about 1% in the beam for films of 2500 A(ring) thickness. This is compared to the resistivity of close to 4 μΩ cm obtained by the conventional evaporation technique without the use of self-ions. We discuss the results within the framework of the theory of grain-boundary resistivity proposed by Mayadas and Shatzkets [Phys. Rev. B 1, 1382 (1970)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103024
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  • 9
    Electronic Resource
    Electronic Resource
    Texture of vapor deposited parylene thin films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2812-2814 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The texture of vapor deposited parylene (poly-p-xylylene) thin films on Si is measured using the x-ray pole figure technique to quantify the crystalline portion. The as-deposited sample is the monoclinic α phase where the (020) fiber texture component comprises 48% and the remaining 52% are randomly oriented crystallites. The sample annealed for 350 °C 12 h is hexagonal β phase with an (040) fiber texture component of 68%. The half-width (ω) of the (040) fiber component of the β crystallites is within 25° of the substrate normal (fiber axis). In a β(040) oriented crystallite, the polymer chain is parallel to the Si substrate. This β fiber texture develops by polymer chain movement and rearrangement of the as-deposited α fiber texture.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111433
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  • 10
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    Vacuum deposition of nonlinear chromophore‐polymer composite thin films (1994)
    American Institute of Physics
    Details
    Publication Date: 1994-01-31
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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