ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1990-1994  (109)
  • 1
    facet.materialart.
    Unknown
    Source parameters of earthquakes and intraplate deformation beneath the Shillong plateau and the northern Indoburman Ranges (1990)
    In:  J. Geophys. Res., Taipei, Conseil de l'Europe, vol. 95, no. 3, pp. 12527-12552, pp. B09401, (ISBN: 0-12-018847-3)
    Details
    Publication Date: 1990
    Keywords: Source parameters ; Fault plane solution, focal mechanism ; Plate tectonics ; JGR
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    BIBLIOGRAPHY SEISMOLOGY
  • 2
    facet.materialart.
    Unknown
    Growth of diamond from atomic hydrogen and a supersonic free jet of methyl radicals (1994)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1994-03-18
    Description: The growth of small ( approximately 10-micrometer) diamond particles (on 0.1-or 0.25-micrometer seed crystals) using an effusive glow discharge nozzle for H.and a separate supersonic pyrolysis jet for .CH(3) is reported. Laser micro-Raman, scanning electron microscopy, and x-ray photoelectron spectroscopy data are presented as evidence that well-crystallized diamond is indeed formed. Resonant multiphoton ionization spectroscopy is used as a diagnostic for the gas-phase chemistry indicating that the radical sources are clean and quantitative and that there is no detectable interconversion of .CH(3) to C(2)H(2) under the conditions of the experiment. Diamond growth is found at substrate temperatures greater than or equal to 650 degrees C with no marked increase in the rate of growth up to 850 degrees C. Acetylene does not give good quality diamond under similar conditions.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Lee, S S -- Minsek, D W -- Vestyck, D J -- Chen, P -- New York, N.Y. -- Science. 1994 Mar 18;263(5153):1596-8.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/17744789" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
  • 3
    Electronic Resource
    Electronic Resource
    A comparative kinetic study of xenon adsorption on a flat Pt(111) and stepped Pt(557) and Pt(112) surfaces (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 7690-7699 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The adsorption and desorption kinetics for Xe on three Pt single crystalline surfaces have been measured using threshold temperature programmed desorption measurements. It has been found that the first-order desorption kinetic parameters at zero coverage for Xe on Pt(111) (E0d =5.73±0.50 kcal/mol; ν0d=1012.5±0.9 s−1) are in excellent agreement with measurements made by a modulated molecular beam method [E0d =5.65±0.35 kcal/mol; ν0d=1012.1 s−1]. The presence of step defect sites of varying density on Pt(557) (1/6 defects) and on Pt(112) (1/3 defects) is shown to have a marked influence on Xe desorption kinetics, producing larger values of E0d(approximately-equal-to)8.5–8.7 kcal/mol and larger values of ν0d (approximately-equal-to)1014 s−1 compared to Pt(111). In addition, for Pt(111), slight attractive Xe–Xe interactions are observed, whereas for Xe adsorption on step sites, repulsive Xe–Xe interactions are observed as the steps fill. Xe adsorption kinetics on Pt(111) at 87 K are consistent with an island growth mechanism. In contrast, on Pt(557) and Pt(112), the adsorption process does not seem to produce island growth on the terraces. These results, taken together, show that using Xe, defect sites on metals may be probed effectively with adsorption and desorption kinetic methods.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458155
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Control of Superficial Scald on ‘?Anjou’ Pears by Ethoxyquin: Effect of Ethoxyquin Concentration, Time and Method of Application, and a Combined Effect with Controlled Atmosphere Storage (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 55 (1990), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: ‘d'Anjou’ pears (Pyrus communis, L.) without ethoxyquin developed superficial scald upon ripening after 3 months of storage. Ethoxyquin at 1,000 ppm controlled scald for 4 months and did not cause phy-totoxicity to the fruit. Ethoxyquin at 2,700 ppm controlled scald for 5 months but caused phytotoxicity to the fruit. Fruit drenched with 1,000 ppm ethoxyquin within 2 days after harvest plus an additional line spray of 1,700 ppm ethoxyquin after 1 to 3 months of storage developed minimal scald incidence and did not suffer phytotoxicity after 5 months. Pre-storage drench of ethoxyquin at 500 ppm to ‘d'Anjou’ fruit was sufficient to control the scald disorder for up to 7 months in a controlled atmosphere (2% O2+ 1% CO2) storage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1990.tb06044.x
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Control of Superficial Scald On ‘?Anjou’ Pears by Ethoxyquin: Oxidation of α-Farnesene and its Inhibition (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 55 (1990), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: α-Farnesene in the skin tissue of ‘?Anjou’ pears (Pyrus communis, L.) increased to a maximum after 3 months of storage in air at - 1°C and then declined. α-Farnesene was oxidized to conjugated trienes and its oxidation was inhibited by ethoxyquin. The split application by drenching fruit with 1,000 ppm ethoxyquin at harvest and then line-spraying 1,700 ppm after 1, 2 or 3 months of storage inhibited the oxidative activity of α-farnesene similar to the single application with 2,700 ppm ethoxyquin by drenching fruit at harvest. Incidence of superficial scald was highly correlated with the level of conjugated trienes. The control of scald by ethoxyquin was due to its antioxidant action and/or its inhibition of conjugated trienes biosynthesis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1990.tb06045.x
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    The thermal dissociation of decaborane on Si(111)-(7×7) and doping effects in the near surface region (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3155-3160 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal decomposition of decaborane (B10H14) and its doping effects on Si(111)-(7×7) has been investigated by surface spectroscopies. Upon adsorption between 100 and 300 K, molecular decaborane was identified on the surface by high-resolution electron-energy-loss spectroscopy (HREELS) by the absence of Si-H surface species production. The thermal decomposition of adsorbed decaborane molecules at higher temperatures involves a preferential removal of hydrogen from the weaker B—H—B linkage. H2 thermal desorption was observed to cover a wide temperature range between 300 and 900 K. Clean boron deposition on the surface was achieved at ∼900 K. Upon heating to ∼1275 K, extensive boron diffusion into bulk silicon produced a highly B-doped region below the surface (∼103 A(ring)) with a carrier hole concentration on the order of ∼1019 cm−3 depending upon the initial surface boron coverage and annealing conditions. The surface adopted a ((square root of)3×(square root of)3)R30° reconstruction with a nominal 1/3 ML boron occupying subsurface substitutional sites. Both the localized B-Si vibration and carrier surface plasmon excitation were observed by HREELS at 100 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351477
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Analysis of differential gain in GaAs/AlGaAs quantum-well lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 85-91 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The differential gain of a quantum-well laser is studied theoretically with use of both a parabolic band model and a valence-band-mixing model. In the valence-band-mixing model, the gain profile is derived from the multiband effective mass theory (k⋅p method) as well as the density matrix formalism. The peak gain including the band-mixing effect is significantly reduced to 1.5–2 times when compared to the conventional parabolic band model. There is still a larger differential gain using the parabolic band model than using the band-mixing model. The magnitudes of differential gains for these two models give the order of 10−16–10−15 cm2, which is in agreement with the experimental results. Besides, the quantum-well thickness also influences the differential gain, which is enhanced by a thinner quantum-well structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357064
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Low-temperature luminescent properties of degenerate p-type GaAs grown by low-pressure metalorganic chemical vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2210-2214 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature (20 K) luminescent properties of heavily carbon- and zinc-doped GaAs grown by low-pressure metalorganic chemical vapor deposition were investigated. The luminescence linewidth became broader at low temperatures when p(approximately-greater-than)4×1019 cm−3 due to the appearance of a shoulder peak. The main peak shifted to low energy when the dopant concentration was increased; however, the shoulder peak was at around 1.485 eV and was nearly independent of the dopant concentration. The peak of the band-to-acceptor transition occurred at low temperature and dominated the emission spectra of degenerate GaAs. The peak energy of Zn-doped samples was lower than that of C-doped samples because of the existence of defects. The excitation power intensity was varied to investigate the behavior of the shoulder peak for both types of dopants. The shoulder peak was a part of the main peak because of the recombination between the conduction band and the bottom of the impurity band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356283
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Carbon incorporation during growth of GaAs by TEGa-AsH3 base low-pressure metalorganic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7851-7856 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heavily carbon-doped GaAs (1×1018∼1×1020 cm−3) grown by low-pressure metalorganic chemical vapor deposition using triethylgallium and arsine as sources and liquid carbon-tetrachloride (CCl4) as dopant has been investigated. The carrier concentration was verified at various growth temperatures, V/III ratios, and CCl4 flow rates. Dopant concentration first increased from 550 °C and reached a maximum at 570 °C growth temperature (Tg) and then decreased monotonously. Carbon incorporation was strongly enhanced when the V/III ratio was less than 30 at Tg=590 °C or less than 40 at Tg=630 °C. Hole concentration increased and then decreased as CCl4 flow rate increased. Growth rate of layers decreased as growth temperature and flow rate of CCl4 increased. The doping efficiency of epitaxial layers grown on the (100) substrate was higher than that on the 2° off toward 〈110(approximately-greater-than) misoriented substrate. Carbon-doped GaAs films had higher Hall mobility than zinc-doped GaAs films at high doping levels due to less self-compensation. The highest dopant concentration in this system was 2.3×1020 cm−3 at Tg=580 °C and V/III=10.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353935
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Silicon nitride thin film production on Si(111) (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4927-4931 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The production of silicon nitride films by ammonia decomposition on Si(111)-(7×7) has been studied by high-resolution electron energy loss spectroscopy, Auger electron spectroscopy, and low-energy electron diffraction. Silicon nitride films of ≤1 monolayer thickness exhibit a characteristic four mode vibrational spectrum after annealing to 1200 K, while multilayer films produce three vibrational modes at 495, 720, and 1020 cm−1. Upon continued heating of the submonolayer and multilayer nitride films, identical vibrational spectra are obtained, suggesting that both layers form Si3N4. These results are in excellent agreement with the vibrational spectra reported in the literature for Si3N4 layers grown using N atoms on the heated Si(111)-(7×7) surface, signifying that identical nitride films can be grown using ammonia. Si3N4 films grown on Si(111) are able to chemisorb ammonia at 300 K, showing that coordinatively unsaturated silicon sites are probably present on the film surface. This is in agreement with other studies which indicate that the growth mechanism for these silicon nitride films involves silicon enrichment at the film/vacuum interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353810
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...