ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1990-1994  (58)
  • 1
    Electronic Resource
    Electronic Resource
    Room temperature epitaxial growth of Ag on low-index Si surfaces by a partially ionized beam (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 466-470 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The room temperature growth of 1000–1500 A(ring) Ag films on HF-dipped Si substrates is studied as a function of self-ion (Ag+) energy during deposition. In all cases the films contained a mixture of epitaxial grains and randomly oriented (111) grains. The orientations observed were Ag(111)/Si(111) with both type A (Ag〈110〉//Si〈110〉) and type B (Ag〈110〉//Si〈114〉) twins; Ag(110)/Si(110) with Ag〈001〉//Si〈001〉; and Ag(100)/Si(100) with Ag〈011〉//Si〈011〉. All three constructions match three Si atomic rows with four Ag rows. As judged by the ratio of epitaxial to nonepitaxial grains, the strength of the epitaxy was seen to decrease in the order (111)(approximately-greater-than)(110)(approximately-greater-than)(100). Increasing the Ag+ ion energy during the deposition was generally seen to decrease this ratio. Annealing of the Ag/Si(100) films induced preferential (100) grain growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351876
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Vacuum deposition of nonlinear chromophore-polymer composite thin films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 533-535 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Novel nonlinear composite thin films containing 4-dialkylamino-4'-nitro-stilbene (DANS) and Teflon AF 1600 have been deposited by vacuum evaporation techniques. Pure DANS thin film, due to its centrosymmetric crystal structure, does not exhibit any electro-optic effect. However, composite thin films of DANS and Teflon AF 1600 with a DANS concentration of 5%–25% (by volume) do exhibit an electro-optic effect after poling. Their electro-optical coefficients are measured to be as large as 2.4 pm/V. X-ray diffraction shows that these composite thin films are in an amorphous state as-deposited as well as after poling. It is argued that the DANS molecules are in their molecular form embedded in the Teflon AF amorphous matrix, thereby allowing the effect of their large molecular hyperpolarizability to be detected. The characterization of the thin films using scanning electron microscopy is also presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111966
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Study of silver diffusion into Si(111) and SiO2 at moderate temperatures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1392-1396 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of Ag from epitaxial layers into Si(111) is studied under an anneal of 450–500 °C using the secondary ion mass spectrometry depth profiling tool. The measurements yielded values of the diffusion constant (0.80–1.6 × 10−15 cm2/s) which fall short of literature values extrapolated from higher-temperature Arrhenius laws. Diffusion of Ag into SiO2 was also measured directly. The observed diffusivity of 1.0 × 10−15 cm2/s is a factor of ∼ 105 smaller than expected from previous determinations of the diffusivity of Ag+ in SiO2 obtained from anneals in forming gas. The discrepancy may be due to changes in the local electrostatic environment in the absence of acceptor levels in SiO2 from dissolved gases which are absent in vacuum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349547
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Growth of epitaxial Ag/Si films by the partially ionized beam deposition technique (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 773-777 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The observation of room-temperature epitaxy of vapor-deposited thin Ag films on Si(111) accomplished under conventional vacuum conditions is reported. Epitaxy was also observed at 350 °C. The films were deposited using a partially ionized beam deposition system, and were typically 1500 A(ring) thick. Epitaxy was confirmed via pole-figure analysis. Scanning electron microscopy revealed excellent surface flatness even for the room-temperature films. Contrary to previous observations, the growth was found to proceed by the layer mode, even at the elevated temperature. This change in morphology is attributed to the enhanced density of nucleation sites due to the energetic ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347363
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Intrinsic Cu gettering at a thermally grown SiO2/Si interface (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3313-3316 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiO2 film of 1500-A(ring) thickness has been grown by a conventional thermal dry oxidation process on commercial Si(111) and Si(100) wafers. A secondary-ion mass spectrometry study of the SiO2/Si structure showed that a gettering of Cu atoms, which were present in the Si wafers as residual impurities, has occurred at the SiO2/Si interface due to the thermal dry oxidation process. The areal concentration of the Cu atoms at the interface has been found to depend on the Cu concentration in the Si wafers. Areal concentrations in order of 1×1012/cm2 were measured at the interfaces. Facilitated by the high diffusivity of Cu in SiO2 and Si, the gettering is thermodynamically driven by the low solid solubility of Cu, either in SiO2 at the temperature range up to the oxidation temperature, or in Si at low temperatures as the wafers cool down. The defects generated at the SiO2/Si interface provide the nucleation sites for the Cu gettering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346383
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Secondary ion mass spectrometry study of the thermal stability of Cu/refractory metal/Si structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6719-6721 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Evidence is presented for the blocking of Cu diffusion into SiO2 and Si by Ta and Ta/W barriers. The anneal was performed at 450 °C for 30 min. Here, W is rejected as a potential barrier for Cu technology. A Cr layer as thin as 200 A(ring) is shown to limit diffusion into Si to ∼600 A(ring). The study also demonstrates the utility and versatility of secondary ion mass spectrometry for evaluating potential diffusion barriers, and the need for such corroborative characterization in light of the lesser sensitivity of Rutherford backscattering spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348973
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Partially ionized beam deposition of 2-methyl-4-nitroaniline thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6766-6773 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline thin films (1–10 μm) of the nonlinear material 2-methyl-4-nitroaniline were deposited on Ag, Cu, and Si by conventional and partially ionized beam deposition. The use of ions was seen to promote a highly oriented film, with only the single x-ray diffraction orientation (112) being observed at reduced temperatures (−50 °C). The effect of the ions on the physical microstructure of the films was to densify the film and reduce the size of the microcrystals. The films had powderlike optical properties and displayed a strong second harmonic from a Nd:YAG laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349851
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Study of interface impurity sputtering in partially ionized beam deposition of Cu on Si (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3619-3624 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cu thin films have been deposited on Si(111) substrate using partially ionized deposition technique in which the self-ions, i.e., the ions derived from the depositing materials themselves, are being used to concurrently bombard the substrate surface during thin film growth. The ion percentage in the deposition beam is in the range from 0% to 5% with the ion energy varying between a few eV and several keV. The Si(111) substrates are chemically cleaned by a RCA cleaning process before loading into the vacuum chamber of deposition. No in situ cleaning of the substrate surface is performed prior to deposition. A reduction of impurities such as oxygen, carbon, and hydrogen at the Cu/Si interface is observed as a function of the ion bombardment parameters using secondary-ion mass spectrometry. The estimates of the sputtering cross section of oxygen, carbon and hydrogen at the Cu/Si interface by Cu ions and their energy dependence are discussed in the framework of mechanisms of the impurity sputtering by low-energy ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346323
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Densification induced dielectric properties change in amorphous BaTiO3 thin films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5596-5600 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of amorphous BaTiO3 thin films deposited on Si substrates were studied as functions of annealing temperature. The film thickness decreased monotonically as the annealing temperature increased up to 600 °C. This reduction is believed to correlate with the densification process observed in the amorphous films during annealing. After the 500 °C annealing, a partial crystallization process was observed. It was also found that the dielectric constant and the index of refraction of the film showed significant changes as the annealing temperature increased from 400 to 500 °C. Correlations between the film density, index of refraction, and the dielectric constant are discussed. A severe reaction at the interface between the film and Si substrate was observed in the 750 °C annealed sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350538
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Observation of a new Al(111)/Si(111) orientational epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 796-799 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new Al(111)/Si(111) orientational epitaxy using x-ray pole figure analysis is reported. The new structure has a 19° rotation with respect to the parallel epitaxy. The results are explained using a geometrical lattice matching concept.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345734
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...