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  • Articles  (4)
  • American Institute of Physics (AIP)  (4)
  • 1990-1994  (4)
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  • Articles  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Structural properties of CdMgTe/CdTe superlattices (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7323-7329 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdMgTe/CdTe superlattices with a high degree of structural perfection were grown on CdTe and Cd0.975Zn0.025Te substrates by molecular-beam epitaxy. The structural properties of the superlattices, i.e., the morphology of the layers and the state of strain relaxation, were examined by transmission electron microscopy and x-ray diffractometry. High-resolution transmission electron microscopy (HRTEM) reveals the structural quality of the superlattices on an atomic scale. The width of the chemical transition between the CdTe and CdMgTe layers was determined by HRTEM using chemically sensitive imaging conditions. Two different mechanisms of misfit dislocation generation could be observed in situ in the electron microscope studying a cross-section specimen of a superlattice which was originally fully strained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356643
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  • 2
    Electronic Resource
    Electronic Resource
    Structural properties of ion-beam-synthesized β-FeSi2 in Si(111) (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3788-3794 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A continuous buried β-FeSi2 layer was obtained by implantation of 200 keV Fe+ ions into Si(111) wafers at elevated temperature. During the subsequent rapid thermal annealing at 1150 °C for 10-s, a continuous buried layer of the metallic α-FeSi2 phase is formed. During the second annealing step at 800 °C, the α phase is completely transformed into the semiconducting β phase. The epitaxial relationship between the β-FeSi2 and the silicon substrate was investigated by transmission electron microscopy. It was found that the β-FeSi2(010) plane grows parallel to the Si(111) substrate. Two different azimuthal orientations were observed. For the first azimuthal orientation, the β-FeSi2[001] direction is oriented almost parallel to one of the three Si〈110〉 directions lying in the interface. In the second azimuthal orientation, the β-FeSi2[100] direction lies parallel to one of the Si〈110〉 directions in the interface. The lattice parameter mismatch and the growth mechanism must be considered to be the main reasons for the epitaxial relationship of the Si(111)/β-FeSi2/Si(111) heterostructures studied in this investigation. The orientation of the β-phase is likely to be predetermined by the orientation of the α-phase which is formed during the first annealing step. Different orientation relationships were observed for β-FeSi2 prepared by solid phase epitaxy and ion beam synthesis without high-temperature annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350891
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  • 3
    Electronic Resource
    Electronic Resource
    Gas source molecular beam epitaxy of FeSi2/Si(111) heterostructures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2271-2273 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial iron disilicide thin layers have been grown on silicon by gas source molecular beam epitaxy (GSMBE) in the temperature range 450–550 °C. Fe(CO)5 and SiH4 are used as sources for the silicide growth on a heated Si(111) surface. The growth phases are characterized in situ by means of high-resolution electron energy loss spectroscopy, ultraviolet and x-ray photoelectron spectroscopies. The formation of an epitaxial metallic γ-FeSi2 layer at the interface with the silicon substrate is revealed and no complete relaxation of this strained metastable interface layer is observed, as the growth proceeds with the semiconducting equilibrium β-FeSi2 phase. The coexistence in the GSMBE grown heterostructures of the metallic (CaF2) and semiconducting (orthorhombic) FeSi2 structures is confirmed by cross-section transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109411
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  • 4
    Electronic Resource
    Electronic Resource
    Growth mode and strain relaxation during the initial stage of InxGa1−xAs growth on GaAs(001) (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 74-76 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth mode and relaxation of the misfit strain of thin InxGa1−xAs layers grown by molecular-beam epitaxy on GaAs(001) were studied by plan-view transmission electron microscopy. The indium concentration was varied between x=0.13 and x=1.0. The transition from two-dimensional to island growth was found at x=0.4. The island growth mode is characterized by islands of different sizes in various states of strain relaxation which is determined by the density of misfit dislocations at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107379
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