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  • American Institute of Physics (AIP)  (15)
  • Springer Nature  (11)
  • 2000-2004  (6)
  • 1990-1994  (20)
  • 1
    Electronic Resource
    Electronic Resource
    GaAs surface reconstruction obtained using a dry process (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2035-2037 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report attaining Ga-terminated (4×2) surface reconstruction on virgin GaAs substrates using a completely dry process at temperatures below the oxide sublimation temperature and without group V overpressure. The native oxides are removed with an electron cyclotron resonance hydrogen plasma treatment, followed by annealing at 500 °C in ultrahigh vacuum, which yields a reconstructed surface suitable for epitaxial overgrowth. Characterization by secondary ion mass spectroscopy and transmission electron microscopy reveals the complete removal of O, reduced C, and high structural order at the epilayer/substrate interface when this preparation method is used before molecular beam epitaxy. Annealing the substrate at a lower temperature yields a nonreconstructed surface possessing significant impurity concentrations, and leads to dislocation defects at the epilayer/substrate interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353148
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  • 2
    Electronic Resource
    Electronic Resource
    Calculated structures for [001] symmetrical tilt grain boundaries in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2048-2056 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structures of [001] tilt boundaries in silicon have been systematically investigated by computer modeling, using the harmonic Keating potential to describe the interatomic forces. The full angular range of symmetrical tilt boundaries can be described in terms of linear combinations of characteristic groupings of atoms. More than one stable relaxed structure has been found for most grain boundaries. In all cases the relaxed bicrystal consists of localized groups of pure edge or 45° dislocation cores embedded in a tetrahedrally coordinated, stable structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348730
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  • 3
    Electronic Resource
    Electronic Resource
    Application of microwave detection of the Shubnikov–de Haas effect in two-dimensional systems (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7533-7542 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microwave detection of the Shubnikov–de Haas (SdH) effect as a contact-free characterization technique for different types of two-dimensional semiconductor structures is explored in the low magnetic field region. The detection technique and the data analysis are described. The character and relevance of the single-particle relaxation time that can be detected by this technique are distinguished from the usual transport scattering time. The measured values of the carrier concentration and single-particle relaxation time agree with electrical measurements, while the problem of making contacts on the structure is avoided. Uncertainties in the analysis for the single-particle relaxation time are discussed. Cyclotron resonance, optically detected cyclotron resonance, and magneto-photoluminescence are applied as other contact-free techniques on the same samples. The results and suitability of these techniques are compared with the microwave detection of the SdH effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354001
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  • 4
    Electronic Resource
    Electronic Resource
    An instrument for measuring circular dichroism simultaneously at all wavelengths in a limited spectral range (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1912-1915 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An instrument is described for the simultaneous measurement of circular dichroism at all wavelengths in a limited spectral range. A polychromator and a charge-coupled device (CCD), serving as multichannel sensor, are arranged behind the sample cell, which is located close to the entrance slit, in contrast to the arrangement of a monochromator before the cell and using a photomultiplier as radiation detector, as usual until now. The CCD with low-noise electronics is driven by the system clock of a microprocessing unit controlled by a quartz oscillator and works fully synchronously with modulation and acquisition cycles. This leads to a high suppression of noise and systematic deviations. An electro-optic modulator with approximately rectangular excitation voltage is used. Partial CD spectra over the range of 80 nm each down to 200 nm have been recorded. The detection of a smaller amount of substance is possible than with other modern commercial instruments such as a JASCO J-600, with the same signal-to-noise ratio.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142391
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  • 5
    Electronic Resource
    Electronic Resource
    Er/Si (111) interface intermixing investigation using core level photoemission (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 341-343 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present in this letter Si 2p core level photoemission measurements on the Er/Si (111) interface formed at room temperature. These spectroscopic data are compared with those measured on amorphous silicide films for various Er concentrations grown by coevaporation of Er and Si species at room temperature under ultrahigh vacuum conditions. This study reveals a strong interaction between Er and the Si (111) substrate even at very low coverage. A mixed interface is observed with silicide formation up to 6 monolayers of deposited metal which corresponds to the onset of erbium metal overgrowth. The Er concentration in the interfacial silicide is found to increase as a function of the deposited Er thickness. A model for the interface is proposed and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103685
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  • 6
    Electronic Resource
    Electronic Resource
    X-ray photoemission characterization of thin epitaxial Fe silicide phases on Si(111) (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2360-2362 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depending on preparation conditions, Fe silicides grown on Si(111) by means of solid phase epitaxy and molecular beam epitaxy show the formation of the bulk ε-FeSi and β-FeSi2 phases as well as epitaxially grown metastable CsCl- and CaF2-type Fe silicides. The valence-band of these Fe silicides are measured with monochromatized Al Kα x-ray photoemission and angle resolved ultraviolet photoemission and are found to be in remarkable agreement with calculated densities of states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110501
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  • 7
    Electronic Resource
    Electronic Resource
    Temperature characteristics of (InAs)1/(GaAs)4 short-period superlattices quantum well laser (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2018-2020 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature characteristics of (InAs)1/(GaAs)4 superlattice quantum well lasers are analyzed both experimentally and theoretically. The measured threshold current density as a function of temperature is characterized by a T0=135 K for 115 K〈T〈380 K and by T0=47 K for 420 K〈T〈480 K. The radiative and nonradiative recombination rates and the gain versus carrier density relationship in monolayer superlattice structures are calculated. Inclusion of the nonradiative recombination process is necessary to explain the observed high-temperature characteristics of these lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109521
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  • 8
    Electronic Resource
    Electronic Resource
    Spin dependent recombination in Pt-doped silicon p-n junctions (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1857-1859 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrically detected magnetic resonance experiments showing spin dependent recombination in commercial p-n diodes are presented. The observed anisotropy in the g values along with the marked shift from the free electron g-value point to a metal-vacancy complex. Deep level transient spectroscopy reveals the presence of the Pt acceptor level (0/−) at Ec−0.23 eV and the donor level (+/0) at Ev+0.32 eV in the same device. Calculations of the recombination rates support that spin dependent recombination occurs at the Pt (+/0) donor level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107160
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  • 9
    Electronic Resource
    Electronic Resource
    GaN epitaxial layers grown on 6H-SiC by the sublimation sandwich technique (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1033-1035 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the structural and optical properties of GaN epitaxial layers grown on 6H-SiC. We employed the sublimation sandwich method to grow single crystal layers at high growth rates with free carrier concentrations of 2×1017 cm−3. Very narrow x-ray diffraction peaks of the GaN (0002) plane are obtained indicating the high quality of this system. These findings are directly reflected in the optical properties. The photoluminescence shows a single sharp exciton line with a half width of 4 meV. Impurity related donor acceptor transitions are seen with very weak intensities. However, at lower energies the internal luminescence transitions of the 3d transition metal ions Fe and V are observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112143
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  • 10
    Electronic Resource
    Electronic Resource
    Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 735-737 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a method for the removal of AlxGa1−xAs native oxides for 0≤x≤1, prior to molecular beam epitaxial overgrowth. The oxides formed on epilayers of AlGaAs after atmospheric exposure are removed in an electron cyclotron resonance hydrogen plasma with a substrate temperature less than 400 °C. Reflection high energy electron diffraction indicates the plasma-prepared AlGaAs surface are oxide-free and crystalline; after a vacuum anneal to 250–500 °C, GaAs or AlGaAs are epitaxially overgrown on these surfaces. Secondary ion mass spectroscopy detects C, O, and Si impurities at the interfaces, where their concentrations increase with increasing Al content of the exposed surface. The quality of the interface and the overgrown film, as observed by transmission electron microscopy, are found to be better for lower interface impurity densities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108854
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