ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The strain relaxation in linearly graded composition InGaAs layers grown on (001) GaAs substrates by molecular beam epitaxy is studied by transmission electron microscopy (TEM) and double crystal x-ray diffraction (DCXRD). The dislocation distribution in these layers does not coincide with the predicted equilibrium dislocation distribution [J. Tersoff, Appl. Phys. Lett. 62, 693 (1993)]. The dislocation density in the dislocation-rich layer thickness is slightly smaller than the equilibrium density. The thickness of the dislocation-rich region is different in the [110] and [11¯0] directions. A good correspondence exists between the TEM and DCXRD strain measurements. The dislocation distribution observed by TEM has made it possible to design a scheme to grow dislocation-free and unstrained top layers on linearly graded composition buffer layers. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112707
Permalink