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  • 1
    Electronic Resource
    Electronic Resource
    The thermal roughening of liquid surfaces and its effect on gas–liquid collisions (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 2539-2547 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Collisions of inert gases with a perfluorinated liquid over an 85 K range reveal how gas–liquid energy transfer depends on the temperature of the liquid. At higher temperatures, thermal accommodation of impinging Ne, Ar, and Xe atoms grows at the expense of prompt inelastic scattering. The experiments suggest that hotter liquids possess rougher surfaces, which promote multiple collisions that dissipate the atom's incident energy and which may momentarily trap gases in gaps created by incommensurate packing of the surface molecules. The fraction of energy transferred during a high energy impulsive collision remains almost unaltered by changes in the liquid's temperature, implying that impulsive encounters within the scattering plane are dominated by single collision events.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.467693
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  • 2
    Electronic Resource
    Electronic Resource
    New experimental method for studying rotationally state-selected ion-molecule reactions (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 10609-10617 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A new apparatus is described in which a beam of molecular ions in a selected vibration–rotation state is prepared by field ionization of high Rydberg states, in an adaptation of the zero-kinetic-energy photoelectron technique. The state-selected ions undergo low energy reactive collisions within a molecular beam and the ionic products are detected in a quadrupole mass filter. The Rydberg states are populated by two-color stepwise multiphoton excitation, and by tuning to the pseudocontinuum of high-Rydberg states associated with different vibration–rotation states of the ion core, different states of the ion are selected and the effect on reactivity determined. Some preliminary results for the H2+H+2→H+3+H reaction are reported. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.467875
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  • 3
    Electronic Resource
    Electronic Resource
    Carbon doping of AlAs using CCl4 and CBr4 during growth by metalorganic molecular-beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2205-2207 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CBr4 and CCl4 have been investigated as carbon doing sources for deposition of AlAs:C by metalorganic molecular-beam epitaxy. Through the use of CBr4, hole concentrations up to 4.5×1019 cm−3 were achieved in as-deposited AlAs layers. Attempts to increase the hole concentration in as-grown material beyond this level resulted in a decrease in the hole concentration even though (SIMS) and (XRD) analysis show the carbon concentration to increase with increasing dopant flow. By annealing the AlAs after growth, the maximum achievable hole concentration could be increased to 1.1×1020 cm−3, which is the highest yet reported for AlAs:C. This increase in p after annealing is believed due to removal of hydrogen from the lattice which passivates the carbon acceptor. Neither carbon source increased the oxygen background beyond the level of ∼5×1017 cm−3 normally observed in AlAs grown under similar conditions. These compounds do introduce Cl and Br, and reduce the Al incorporation rate due to parasitic etching reactions with the adsorbed halogen. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112762
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  • 4
    Electronic Resource
    Electronic Resource
    Ferroelectric and pyroelectric properties of strontium barium niobate films prepared by the sol-gel method (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1763-1765 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of Sr0.6Ba0.4Nb2O6 on silicon and fused silica substrates have been prepared by the sol-gel method. The dense, transparent, and crack-free films were fabricated by the dipping and then firing at a temperature of 700 °C. Ferroelectric properties were confirmed by P-E hysteresis loops. The refractive index and optical transmission were measured. The temperature variation of the dielectric constant was obtained. The pyroelectric coefficient at room temperature was found to be 2×10−8 C/cm2 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347226
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  • 5
    Electronic Resource
    Electronic Resource
    Some optical properties of infrared transmitting Bi-Ca-Sr-Cu-O glasses (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 894-896 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Glasses based on Bi2O3, CaO, SrO, and CuO were first prepared as precursors to polycrystalline superconducting ceramics based on these oxides. These glasses were found to be transparent in the infrared to 11 μm. The infrared cutoff is approximately 6.5 μm. The refractive indices are surprisingly high being about 2.9.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346754
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  • 6
    Electronic Resource
    Electronic Resource
    The self-biased heterojunction effect of ferroelectric thin film on silicon substrate (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2985-2991 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several ferroelectric thin films with n-type or p-type conductivity, including undoped and doped lead zirconate titanate, barium titanate, strontium barium niobate, and potassium niobate, as well as lead barium niobate, were made on silicon single-crystal substrates by the sol-gel process. Self-biased heterojunction effects were observed in both p-ferroelectric thin film on n-silicon and n-ferroelectric thin film on p-silicon by the measurement of current-voltage characteristics. It has been observed that either p-n junction or n-p junction in the ferroelectric-semiconductor systems behave like a rectifying diode. However, the junction effect is weak in the p-ferroelectric thin film on p-silicon system. A physical model based on the consideration of energy-band theory has been constructed in explaining this effect. Possible applications of this effect are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345420
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  • 7
    Electronic Resource
    Electronic Resource
    Compositional homogeneity of metalorganic chemical vapor deposition grown III-V compound semiconductor epilayers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 250-256 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The compositional homogeneity of epitaxially grown layers of GaInAs, AlInAs, and GaAlInAs on InP substrates has been investigated using pulsed laser atom probe techniques. All the material characterized was shown by transmission electron microscopy to have a fine-scale contrast variation, however only some of the samples were found, using atom probe techniques, to show distinct deviations from compositional uniformity. The average composition measured from each of the layers was that of the lattice-matched composition intended during growth, however the composition varied locally, on a scale of typically 10–20 nm, from the mean composition by up to 5 at. %.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347759
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  • 8
    Electronic Resource
    Electronic Resource
    Zero-kinetic-energy photoelectron spectrum of carbon dioxide (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 8430-8439 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The zero-kinetic-energy (ZEKE) photoelectron spectrum of carbon dioxide has been measured between 111 000 and 112 000 cm−1 at a resolution of 1.5 cm−1 using a coherent source of XUV radiation based on four-wave mixing in krypton. The spectrum consists of six bands corresponding to transitions from the ground X 1Σ+g(v1,v2,v3=000) state of the neutral to the two spin–orbit components of the (000) vibrational level and the four Renner–Teller states associated with the (010) vibrational level of the ground electronic state (X 2Πg) of the ion. The analysis of the partially resolved rotational structure of the various bands leads to a detailed picture of the photoionization process. The propensity rules for angular momentum transfer during photoionization are strongly dependent on the symmetry (2Πg,3/2, 2Πg,1/2, 2Δu,5/2, 2Δu,3/2, 2Σ+u, and 2Σ−u) of the different ionic states probed and on the Hund's coupling case they follow [case (a) for the Π and Δ states and case (b) for the Σ states]. A comparison of the experimental ZEKE line intensities with theoretical predictions and conventional photoelectron spectra reveals a series of anomalies which are discussed in terms of final state interactions. The ionization potential of CO2 is estimated to be 111 111.0±3 cm−1, somewhat lower than the value of 111 121±2 cm−1 determined from extrapolation of the Rydberg series by Cossart-Magos et al. [Mol. Phys. 61, 1077 (1987)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.466212
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  • 9
    Electronic Resource
    Electronic Resource
    Preparation of ions in selected rotational states by delayed pulsed field ionization (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 4213-4214 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A novel method of preparing ions in selected rovibronic states is presented. It is based on pulsed field ionization of long-lived high-n Rydberg states lying just below the different rovibronic energy levels of the ion. The potential of the method is illustrated with the example of hydrogen: A clean population of H2+ ions is prepared in the X 2∑g+ (v+=2, N+=0, 1, 2, 3) states. The method ought to be applicable to the preparation of a wide range of small molecular ions in selected rotational states and opens new possibilities in the study of state-to-state ion–molecule reactions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.466119
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  • 10
    Electronic Resource
    Electronic Resource
    Noise and the Kelvin method (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1326-1332 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The Kelvin probe, used to measure changes in work function (wf), has proved particularly useful as a UHV surface analysis technique, having applications in the study of thin films, adsorption kinetics, surface photovoltage spectroscopy, surface topographies, etc. However the Kelvin circuit is plagued by noise problems, which are considerably enhanced by long connecting wires and the nonideal UHV environment. Careful shielding is essential in order to improve the signal-to-noise (S/N) ratio, especially at backing potentials close to the null condition. Although lock-in-amplifier (LIA) based automatic compensation systems are available they operate on low signal levels and are prone to electromagnetic pickup from the driving element and mechanical instabilities of the vibrating capacitor. We discuss the general noise spectrum and describe an alternative "off-null'' approach utilizing a data-acquisition-system (DAS) based measuring system that features an active suspension system (ASS), automatic set-up, and software elimination of driver talkover. This system has applications where very high resolution (〈0.1 meV) is required, or if low S/N ratios caused by reduced probe dimensions or a high noise background would otherwise prejudice the measurement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142494
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