ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Quality of ZnSe/GaAs epilayers studied by spatial correlation model of Raman scattering (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2845-2847 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, the spatial correlation model has been used for interpreting the line shapes of the first-order longitudinal-optical phonon Raman spectra of ZnSe/GaAs epitaxial layers. The good agreement between theoretical line shapes and the experiment measurements was illustrated for the samples grown by the molecular beam epitaxy (MBE), hot wall epitaxy (HWE), and hot wall beam epitaxy (HWBE).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109229
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Product vibrational distributions and collision energy dependence of chemiluminescent reactions of group IVA elements with O2, N2O, and NO2 (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 4839-4848 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Computer simulations of the observed spectra in reactions of group IVA elements with oxygen donors yield information on the product vibrational distributions in the electronically excited states of group IVA oxides. The observed vibrational distributions have been compared with the prior predictions. While the vibrational distributions resulting from the Ge2+O2 reaction show statistical behavior, those of products formed in the Si+N2O reaction are found to be much hotter than the prior distributions. Also, time-of-flight studies have been conducted to determine the collision energy dependence of the reactive rate coefficients and the cross sections for these chemiluminescent reactions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457701
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Chemiluminescent reactions of group IV A atoms with PCl5 and SnCl4 (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 7830-7835 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Earlier work on chemiluminescent (CL) reactions of group IV A atoms with halogens has been extended to two chlorine-rich molecules PCl5 and SnCl4. The CL products in these reactions were found to be group IV A dihalides formed in a one step mechanism instead of the two step mechanism proposed in the study of the reactions involving Br2, I2, and ICl. For PCl5, the CL products were found to be group IV A dichlorides, while for SnCl4, the CL products are believed to be SnCl2 for all three atoms. The overall absolute cross sections for the reactions have been estimated, as well as the relative cross sections as functions of collisional energy. The observation of different collisional energy dependence for the reactions of PCl5 and SnCl4, along with other evidence, suggests that two different mechanisms produce the CL products in the two groups of reactions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459364
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Kinetics of protein folding: The dynamics of globally connected rough energy landscapes with biases (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 11037-11043 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We study relaxation within a biased rough energy landscape as a means of investigating protein folding kinetics. The energies of the conformational states of the protein are taken to be random variables. The degree of similarity of each state with the native is described by an order parameter ρ. The energy is, on average, a decreasing function of ρ, in line with the principle of minimal frustration. The limiting case model described here has global connectivity. There are no restrictions on the change in order parameter in the elementary moves through conformational space. The folding kinetics vary as a function of both the energy gap between the folded and unfolded states and the roughness of the energy landscape. This model yields curved Arrhenius plots that are qualitatively similar to those seen in experiments and in simulations of protein folding. We show that in globally connected models, the Laplace transformed concentrations of species obey a frequency dependent generalization of the law of mass action. We show that when states with intermediate degrees of ordering are included in a globally connected model, one obtains much the same qualitative behavior as some experiments that are often used to justify the existence of specific intermediates along a sequential pathway even though there is no such path in the model. Also we show that for short times, populations of ensembles of configurations are dominated by entropic considerations: an observation in harmony with studies on initial events in folding based on more detailed models. Thus, we believe that this model sheds light on the interpretation of experiments that probe protein folding kinetics. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.467855
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Superconducting epitaxial (Tl,Bi)Sr1.6Ba0.4Ca2Cu3O9−δ film with high critical current in magnetic field (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 237-239 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality 1-μm-thick (Tl,Bi)Sr1.6Ba0.4Ca2Cu3O9−δ films were synthesized by a simple two-step procedure. A prefilm of TlxBiySr1.6Ba0.4Ca2Cu3Oy was first deposited on the (100) surface of LaAlO3 by laser ablation at 300–500 °C. This prefilm was placed on a gold plate sitting between two similarly placed unfired Tl0.95Bi0.22Sr1.6Ba0.4Ca2Cu3O8.76 pellets, wrapped in silver foil, and subsequently heated in air at 840–870 °C for 25–60 min. The resulting glossy film exhibited at 77 K a transport Jc of 2×106 A/cm2 at 0 T and 1.5×106 A/cm2 at 0.5 T with magnetic field parallel to the film. These observed values show the absence of weak links effect. X-ray diffraction (XRD) reflections reveal the existence of only 1223 phase with nearly perfect c-axis alignment. The half-width of rocking angle monitored at (006) reflection is only 0.365°. XRD φ scan also shows no trace of intergranular misalignment along the a and b axes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112640
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    N-channel metal-oxide-semiconductor transistors fabricated in a silicon film bonded onto sapphire (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 724-726 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: N-channel metal-oxide-semiconductor transistors were fabricated in silicon films that were bonded onto sapphire substrates. The bonded silicon films can withstand high processing temperatures (850 °C). The electrical performance of the resulting devices is comparable to that of devices fabricated in bulk silicon wafers. This technology can be applied to silicon-on-insulator device development and for integrated optoelectronic device research.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111047
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Characteristics of the Mn and Co volume-doped acicular γ-Fe2O3 particles (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5845-5848 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mn- and Co-doped acicular γ-Fe2O3 particles with a coercivity of 923 Oe and Co content of 3.5 wt % have been prepared by a special process. This involves high-temperature ion diffusion, then step annealing. These particles exhibit a high magnetic thermal stability and low-temperature coefficient of coercivity. The latter demonstrates a striking contrast to the ordinary cobalt-body-doped γ-Fe2O3 particles. The induced uniaxial anisotropy constant Ku and the magnetocrystalline anisotropy constant K1 of the particles were determined by torque measurements. The novel properties of these particles are mainly due to the high uniaxial anisotropy, resulting from the anisotropic arrangements of cobalt ions. With the above characteristics and low Co content, these acicular particles can be one of the promising candidates for particulate high-density magnetic recording materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358398
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Epitaxial growth of RbTiOPO4 films on KTiOPO4 substrates by excimer laser ablation technique (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 8215-8217 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transparent single-phase rubidium titanyl phosphate (RTP) films having excellent crystalline properties have been deposited by excimer laser ablation method on (001)- and (010)-oriented potassium titanyl phosphate (KTP) substrates, respectively. X-ray θ-2θ scans and pole figures showed that the laser-ablated RTP films grew epitaxially on, and had exactly the same orientations of, the underlying KTP substrates. X-ray photoelectron spectroscopy analysis revealed that the RTP films prepared with this method are nearly stoichiometric. It appears to be possible to use these films as waveguides having sharp waveguide/substrate interfaces. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357884
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Influence of size and magnetocrystalline anisotropy on spin canting anomaly in fine ferrimagnetic particles : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6591-6593 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fine equiaxed γ-CoxFe2−xO3 (x=0, 0.06) particles with a diameter ranging from 200 to 1000 A(ring) were prepared by chemical precipitation. The average crystallite sizes were determined from x-ray line broadening measurements. The saturation magnetization and magnetocrystalline anisotropy of the particles were determined by using the approach to saturation. An empirical linear dependence of the specific saturation magnetization σs on the specific surface area Sa of the fine crystallites was obtained in the form of σs(S)=σs(∞)(1−ASa). The slope A which reflects the surface spin canting anomaly is different for γ-Fe2O3 and γ-Co0.06Fe1.94O3 particles. Under the supposition of the fine crystallite consisting of two parts, i.e., the surface layer, whose magnetic moment cannot be turned entirely along the direction of the applied field, but makes an average canting angle with the field, and the inner part, whose magnetic moment can be aligned along the direction of the applied field, the above formula can be interpreted well. The different slope A for γ-Fe2O3 and γ-Co0.06Fe1.94O3 particles may be caused by the different anisotropies of the two series particles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358203
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Magnetic properties of R2Fe17−xGax compounds (R=Y, Ho) : The 6th joint magnetism and magnetic materials (MMM)−intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6740-6742 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural and magnetic properties of the R2Fe17−xGax compounds (R=Y, Ho, 0≤x≤6) have been investigated. All investigated Ho2Fe17−xGax compounds with x(approximately-greater-than)2.5 crystallize in the Th2Zn17-type structure and the others in the Th2Ni17-type structure. The substitution of Ga for Fe leads to an increase in lattice constants a, c, and unit-cell volume, a decrease of the average Fe moment, and a maximum of the Curie temperature as a function of the Ga concentration at x=3, for both Y2Fe17−xGax and Ho2Fe17−xGax compounds. The high magnetic field leads to a spin phase transition from the ferromagnetic to the canted phase. The critical field Bc of the transition decreases with increasing Ga concentration. The exchange interaction constants JTT between Fe–Fe spins and JRT between R–T spins have been derived from a mean field analysis of Curie temperature. It has been found that JTT increases at first, going through a maximum at x=3, then decreases with increasing x, whereas JRT is almost independent of the Ga content, which is consistent with the result obtained from a mean field analysis of the high field magnetization curves of the Ho2Fe17−xGax.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358147
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...