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  • 1
    Electronic Resource
    Electronic Resource
    Structure and Interaction of Lithium Dodecyl Sulfate Micelles in the Presence of Li-Specific Macrocyclic Cage: A Study by SANS (1994)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 98 (1994), S. 10208-10215 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100091a041
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical characteristics of barium titanate films prepared by laser ablation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2143-2145 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The BaTiO3 ferroelectric films of quality suitable for applying as dielectrics in 64 and 256 Mb dynamic random access memory have been successfully synthesized using the laser ablation technique. The dielectric constant and dielectric strength of the films are ε=200 and 1 MV/cm, respectively. The switching characteristics are Qc=0.66 μc/cm2, ts=0.1 ps, and J1=1.57 μA/cm2 at 2.5 V, for charge storage density, writing time, and leakage current density, respectively. The quality of the BaTiO3 films is superior to the Ta2O5 dielectric films and is comparable to the lead-zirconate-titanate ferroelectric films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354744
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of Pt-Si interface by spectroscopic ellipsometry (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7423-7427 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic ellipsometric measurements for Pt/n-Si samples with different thickness of Pt films have been performed. The thickness of the Pt films determined with the three-phase model (air/Pt/Si) changes with the wavelength λ while that with the four-phase model (air/Pt/interface layer/Si) remains unchanged, showing the existence of an interface layer. At the same time, the apparent optical dielectric constants of the interface layer as a function of λ are also obtained. A calculation based on the effective medium theory is carried out to simulate the optical dielectric data of the interface layer. Some structural information of the interface layer is obtained from the calculation. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357968
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  • 4
    Electronic Resource
    Electronic Resource
    High quality ZnO thin films grown by plasma enhanced chemical vapor deposition (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 501-505 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality ZnO thin films have been grown on a Si(100) substrate by plasma enhanced chemical vapor deposition using a zinc organic source [Zn(C2H5)2] and carbon dioxide (CO2) gas mixtures at the low temperature of 180 °C. The dependence of ZnO thin film quality on the gas flow rate ratio of Zn(C2H5)2 to CO2 (GFRRZC) is studied by using x-ray diffraction (XRD), optical absorption (OA) spectra, and cathodoluminescence (CL) spectra. High quality ZnO thin films with a c-axis-oriented wurtzite structure are obtained when the GFRRZC is 0.33. XRD shows that the full width at half maximum of (0002) ZnO located at 34.42° is about 0.2°. At room temperature, a pronounced free exciton absorption peak around 365 nm is clearly observed. Also, a strong free exciton emission without deep level defect emission is observed around 385 nm, and its temperature dependence is studied from the photoluminescence spectra. These observations indicate the formation of a high quality ZnO film. Additionally, nitridation of the Si surface caused by releasing NH3 plasma into the deposition chamber is an effective way to improve film quality. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415545
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  • 5
    Electronic Resource
    Electronic Resource
    Oxide-nitride storage dielectrics on smooth and rough polycrystalline silicon layers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 345-347 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that for the same capacitance value, 9.5-nm-thick oxide-nitride storage dielectrics deposited on rough polycrystalline silicon exhibit a lower leakage current and a higher lifetime than 5.9 nm layers on smooth polycrystalline silicon. Leakage current reduction of more than two orders of magnitude and a lifetime increase of more than three orders of magnitude are reported. These improvements are explained by the nitride bulk-limited type of conduction. Our data show that textured storage capacitors have all the properties required for efficient fabrication of 64 megabit dynamic random access memories.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105591
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  • 6
    Electronic Resource
    Electronic Resource
    Expression of the ipomoelin gene from sweet potato is regulated by dephosphorylated proteins, calcium ion and ethylene (2003)
    Oxford, UK : Blackwell Science Ltd
    Plant, cell & environment 26 (2003), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: A wound-inducible cDNA, ipomoelin (IPO) was isolated from the subtraction library of sweet potato (Ipomoea batatas cv. Tainung 57) and used as a molecular probe to investigate the transduction pathway of wounding signal within plant cells. Following mechanical wounding of the leaves of sweet potato, IPO mRNA accumulation peaked at 6 h and then continuously declined. However, IPO gene expression in the apical unwounded leaves began at 6 h after wounding and continued for a further 10 h. Besides mechanical wounding, methyl jasmonate (MeJA) was identified as a signal transducer leading to the accumulation of IPO mRNA. Treatment with salicylic acid reduced the production of IPO mRNA, further supporting the involvement of the octadecanoid pathway in the signal transduction of wounding in sweet potato. In addition, ethylene was involved in the signal pathway and induced the expression of the IPO gene. Furthermore, the application of okadaic acid, a protein phosphatase inhibitor, blocked the accumulation of IPO mRNA induced by MeJA or ethylene, indicating that activation of the IPO gene by both MeJA and ethylene was via dephosphorylated proteins. The presence of a calcium ion chelator or channel blockers also inhibited the expression of the IPO gene after wounding. However, investigation by confocal scanning microscopy further pointed out that mechanical wounding rather than the application of MeJA induced the accumulation of the calcium ion. These results may indicate that the calcium ion is also involved in the activation of IPO mRNA. In addition, wounding signals the accumulation of calcium ion first and then stimulates the biosynthesis of MeJA in sweet potato. Hence, the reaction sequence of signal transducers, including the calcium ion, MeJA and protein kinase/phosphatase, in the wounding signalling pathway of sweet potato is suggested in this report.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.0016-8025.2003.01062.x
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  • 7
    Electronic Resource
    Electronic Resource
    Growth morphology of decagonal quasicrystal in laser resolidified Al72Ni12Co16 (2000)
    Springer
    Journal of materials science 19 (2000), S. 1095-1097 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1006724127554
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  • 8
    Electronic Resource
    Electronic Resource
    Nanometer-scale, fully net lamella microstructure in the laser resolidified Ti-45Al-2Cr-2Nb alloy (2000)
    Springer
    Journal of materials science 19 (2000), S. 241-243 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1006771027374
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  • 9
    Electronic Resource
    Electronic Resource
    Adaptive FEM computation of forming processes - Application to porous and non-porous materials (1990)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal for Numerical Methods in Engineering 30 (1990), S. 1527-1553 
    Details
    ISSN: 0029-5981
    Keywords: Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mathematics , Technology
    Notes: This paper presents the ‘flow formulation’ approach applicable to both compressible and incompressible forming analysis. Appropriate error estimates and adaptive remeshing schemes are described for updated co-ordinate analysis. Several numerical examples are given. These are backward-forward extrusion and thermally coupled extrusion of pore-free materials, followed by cylinder upsetting, and tapered die extrusion of porous materials. The simulation of the deformation is shown as well as the distribution of effective strain and density at different time stages. The procedures are automatic and are incorporated in a general purpose code FEMMETA.
    Additional Material: 23 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/nme.1620300812
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  • 10
    Electronic Resource
    Electronic Resource
    Assessment of discretized errors and adaptive refinement with quadrilateral finite elements (1992)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal for Numerical Methods in Engineering 33 (1992), S. 781-798 
    Details
    ISSN: 0029-5981
    Keywords: Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mathematics , Technology
    Notes: This paper studies discretized errors, and their estimation in conjunction with quadrilateral finite element meshes which are generated by the intelligent mesh generator XFORMQ.1 The exact energy error is used to evaluate the distortion effect of the quadrilateral mesh. The Zienkiewicz-Zhu2 error estimate and actaptive procedure are applied to the short cantilever and the square plate problems using the quadrilateral mesh generator XFORMQ. It is shown that the multistage quadrilateral element refinement produces results superior to the triangular element refinement in the test cases.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/nme.1620330408
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