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  • Wiley-Blackwell
  • American Institute of Physics (AIP)
  • 2010-2014  (10)
  • 1990-1994  (126)
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  • 1
    Electronic Resource
    Electronic Resource
    Two-point quasifractional approximant in physics. Truncation error (1991)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 32 (1991), S. 1470-1477 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The quasifractional approximation method is developed in a systematic manner. This method uses simultaneously the power series, and at a second point, the asymptotic expansion. The usual form of the approximants is two or more rational fractions, in terms of a suitable variable, combined with auxiliary nonfractional functions. Coincidence in the singularities in the region of interest is pursued. Equal denominators in the rational fractions is required so that the solution of only linear algebraic equations is needed to determine the parameters of the approximant. An upper bound is obtained for the truncation error for a certain class of functions, which contains most of the functions for which this method has been applied so far. It is shown that quasifractional approximants can be derived as a mixed German and Latin polynomial problem in the context of Hermite–Padé approximation theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.529304
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  • 2
    Electronic Resource
    Electronic Resource
    The chemical potential in atomically inhomogeneous fluids in external force fields by computer simulation (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 4098-4102 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The accuracy and practicality of the Widom fictitious-particle insertion method for determining the chemical potential is tested for very inhomogeneous fluids in strong external potentials by a series of molecular dynamics computer simulations. The chemical potential determined in this way is found, as predicted, on an atomic scale to be independent of position in the fluid to a few percent even when the density varies by up to a factor 80. This severe test means that this method of determining chemical potential is established as reliable and accurate in any well-found computer simulation even when the system is very inhomogeneous.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.467527
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  • 3
    Electronic Resource
    Electronic Resource
    The effect of grid quality and weight derivatives in density functional calculations (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 8894-8902 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Full density functional geometry optimizations on hydrogen peroxide and heptane/dimethyl pentane using six different numerical grids are presented. The grids vary in quality and gradients are calculated (1) assuming a fixed grid and no weight derivatives, and (2) with full allowance for a "moving'' atom-centered grid and inclusion of the weight derivatives. The results clearly demonstrate that accurate energies and geometries can be obtained with around 3500 points per atom for medium-sized systems (up to say 30 atoms) without the necessity of including the weight derivatives. The latter only begin to influence the results for grids which are of insufficient quality to guarantee reliable values in any case.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.468081
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  • 4
    Electronic Resource
    Electronic Resource
    Fracture and spall ejecta mass distribution: Lognormal and multifractal distributions (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2724-2731 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Numerous distributions (Mott, exponential, bimodal) have been proposed on the basis of geometrical or semi-empirical grounds as suitable for characterizing the mass distribution from fracture or spallation. It is argued here that the lognormal distribution is particularly suitable on the basis of a number of considerations: empirical fits, the fractal character of fracture, and the geometrical arguments when carried to their logical conclusion. We explain the deviations from the lognormal distribution as due to the finite thickness of the shell, which violates the scale-independence requirement for exact fractal behavior and introduces multifractal character to the spallation process. A plausiblity argument for the observed relationship between ductility and the shape of the distribution is offered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351522
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  • 5
    Electronic Resource
    Electronic Resource
    Assessment of single crystal p-toluene sulfonate as an all-optical switching material at 1.3 μm (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1742-1744 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We evaluate the potential of single crystal PTS (p-toluene sulfonate) for all-optical applications at the 1.32 μm communications wavelength by measuring the electronic and thermo-optic nonlinearities, and the multiphoton absorption with picosecond pulses. With appropriate heat sinking, duty cycles greater than 25% should be possible without significant cumulative thermal effects for 1 W operating powers. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112902
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  • 6
    Electronic Resource
    Electronic Resource
    High brightness slab waveguide carbon monoxide laser (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2916-2918 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Near diffraction limited output from a slab waveguide carbon monoxide gain medium using a hybrid confocal unstable resonator is described. A device producing a cw output of 80 W in a beam with M2=1.5 has been demonstrated operating with 12% efficiency at −30 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111410
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  • 7
    Electronic Resource
    Electronic Resource
    Carbon incorporation in InP grown by metalorganic chemical vapor deposition and application to InP/InGaAs heterojunction bipolar transistors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4233-4236 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of residual carbon has been studied for InP grown at low temperatures using TMIn and PH3 by low-pressure metalorganic chemical vapor deposition. n-type conduction is observed with electron concentrations as high as 1×1018 cm−3, and the electrical activation efficiency is 5%–15%. Carbon incorporation is found to be highly dependent on substrate temperature, suggesting that the rate-limiting step is desorption of CHy (0≤y≤3) from the surface during growth. Hydrogen is also incorporated in the layers during growth. The electron mobilities are lower for C-doped InP than for Si-doped InP. InP/InGaAs heterojunction bipolar transistors with C as the p-type base dopant and either Si or C as the n-type emitter dopant have been fabricated and compared. Devices with a carbon-doped base and emitter showed degraded performance, likely as a result of deep levels incorporated during growth of the emitter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356011
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  • 8
    Electronic Resource
    Electronic Resource
    Observation of surface charge screening and Fermi level pinning on a synthetic, boron-doped diamond (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4015-4019 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic current-voltage (I-V) curves taken with a scanning tunneling microscope on a synthetic, boron-doped diamond single crystal indicate that the diamond, boiled in acid and baked to 500 °C in vacuum, does not exhibit ideal Schottky characteristics. These I-V curves taken in ultrahigh vacuum do not fit the traditional theory of thermionic emission; however, the deviation from ideal can be accounted for by charge screening at the diamond surface. At ambient pressure, the I-V curves have a sharp threshold voltage at 1.7 eV above the valence band edge indicating pinning of the Fermi energy. This measurement is in excellent agreement with the 1/3 band gap rule of Mead and Spitzer [Phys. Rev. 134, A713 (1964)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354445
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of low-temperature annealing on the native oxide of AlxGa1−xAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3880-3885 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on the effects of low-temperature (∼540 °C) annealing, with and without an As overpressure, on the native oxide of AlxGa1−xAs formed via water vapor oxidation at elevated temperature (∼425 °C). Auger electron spectroscopy data show the Al to be oxidized while the Ga remains unoxidized after the water vapor oxidation of AlxGa1−xAs. Transmission electron microscopy data show a possible composition or phase change upon annealing with an As overpressure. Electron diffraction data indicate that the as-oxidized AlxGa1−xAs is a combination of four possible phases of Al2O3, η, γ, δ, χ, or AlO(OH). Supporting secondary-ion mass spectrometry data are also presented. Ellipsometer measurements indicate an index of refraction n=1.63 (λ=6328 A(ring)) for the native oxide. Ellipsometer measurements of the oxidized and annealed samples show the creation of a region 300–550 A(ring) thick at the oxide-semiconductor interface with n=2.78–2.93.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354482
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  • 10
    Electronic Resource
    Electronic Resource
    Structure and chemical composition of water-grown oxides of GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1863-1867 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Previously it has been shown that the electronic surface properties of GaAs can be improved by photochemical treatment in water. If this photowashing technique is carried out with intense white light, oxides several hundred angstroms thick can be grown. This paper reports the structure and composition of this photowashed oxide and one grown by soaking in stagnant water in low light. The oxide was determined by TEM cross sections to be highly porous, but with thin continuous oxide layers both at the surface and at the oxide/GaAs interface. The oxide is composed of Ga2O3 with a low concentration of As2O3. The layer is primarily a fine grain Ga oxide crystal with a structure which appears different from the common forms of Ga2O3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345614
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