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  • 2015-2019  (15)
  • 1990-1994  (43)
  • 1
    Electronic Resource
    Electronic Resource
    Schottky barrier of epitaxial (100)CoGa on GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1191-1193 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky barrier heights in the epitaxial (100) CoGa/n-(100) GaAs diodes were studied by the I-V and internal photoemission methods. Diodes of these epitaxial contacts were shown to exhibit good rectifying behaviors and the forward current was found to follow the thermionic emission theory. Using the temperature dependence of the barrier heights, we show that the Schottky barrier heights are about 0.67 eV by I-V and 0.68 eV by internal photoemission measurements. The Schottky barrier height was found to be constant for contacting to n-type GaAs in the temperature range between 150 and 300 K. From this fact, we conclude that the metal Fermi level is pinned relatively to the GaAs conduction band minimum in this case. This finding is similar to other epitaxial contacting cases, CoSi2/Si and ErSi2/Si, where the Fermi level pins to the nearest semiconductor band [J. Y. Duboz, P. A. Badoz, F. Arnaud d'Avitaya, and E. Rosenche, Phys. Rev. B 40, 10 607 (1989)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351803
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  • 2
    Electronic Resource
    Electronic Resource
    Self-consistent analysis of intersubband transitions in quantum wells (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3199-3201 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intersubband transitions in modulation doped, arbitrary potential profile quantum-well structures under an applied field are analyzed by solving the Schrödinger and Poisson equations self-consistently. This analysis is applied to the local-to-global transitions of a step well structure. The results show that although the band-bending effect is significant (∼25 meV) at a relatively high carrier density of 5.6×1011 /cm2 (∼3×1017 /cm3 ), the transition energies and absorption coefficients remain close to the flat band cases. This calculation confirms that the local-to-global transitions have large linear Stark shift and oscillator strength even at high doping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345375
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  • 3
    Electronic Resource
    Electronic Resource
    Bifurcation solutions of the Schwinger–Dyson equation (1994)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 35 (1994), S. 6270-6290 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: As a function of the coupling constant, it is shown that the Schwinger–Dyson equation has many bifurcation solutions that branch off from the trivial solution. Three of these solutions are obtained explicitly, using the parameter imbedding method and the Liaponov–Schmidt method. Application of these methods to other nonlinear problems is discussed. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.530674
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  • 4
    Electronic Resource
    Electronic Resource
    A generalized parameter imbedding method (1994)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 35 (1994), S. 6693-6702 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The parameter imbedding method for the Fredholm equation converts it into an initial value problem in its parameter λ. The method is established for general operator equations of the form [I+fˆ(λ)]ψ=φ. It is particularly useful for studying spontaneous symmetry breaking problems such as contained in the nonlinear Schwinger–Dyson equation. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.530637
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  • 5
    Electronic Resource
    Electronic Resource
    dc H−/D− sources at TRIUMF : Proceedings of 5th international conference on ion sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1189-1191 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Several H−/D− dc sources employing multicusp confinement and magnetic filtering to enhance H−/D− production have been designed, built, and tested. Source performance in terms of beam output, emittance merit as functions of arc current, confinement magnetic strength, plasma volume, beam exit diameter, and extraction lens configuration have been studied in detail. At present, up to 9 mA H− and 3 mA D− beams with a normalized emittance of 0.44 mm mrad for H− beam have been extracted. A number of sources are tailored to fit the requirements of individual projects. In this article, a general description of source structure, power and biasing algorithms, and extraction geometries of these cusp sources will be given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145053
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical resistivity of ultrathin, epitaxial CoGa on GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3399-3401 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The successful growth of ultrathin CoGa on GaAs by MBE is demonstrated. The crystalline quality of the films is verified by in situ RHEED, RBS, and x-ray rocking curve. Transport studies are performed in the temperature range of 4 to 300 K for layer thickness from 10 to 730 A(ring), and all the films are found to be electrically continuous. The Markowitz's model [Phys. Rev. B 15, 3617 (1977)] of the electrical resistivity is applied to analyze the measured data. Finally, the specularly scattering probability of these thin films is studied using Fuchs' theory [Proc. Cambridge Philos. Soc. 34, 100 (1938)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105687
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  • 7
    Electronic Resource
    Electronic Resource
    Variation of the Schottky barrier height of the differently oriented CoGa on GaAs by molecular beam epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2869-2871 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Schottky barrier formation of CoGa on (100)n-GaAs is investigated. CoGa is grown by molecular beam epitaxy and the epitaxial orientation is controlled by the initial growth conditions of the GaAs substrate. Schottky diodes with three different phases of CoGa: (100)CoGa, (110)CoGa, and mixed (100) and (110)CoGa, are fabricated and Schottky barrier heights are measured by I-V, C-V, and internal photoemission. The fact that these three types of diodes have different values of barrier height indicates that the mechanisms of the barrier formation for these three phases are different. Finally, the temperature dependence of the Schottky barrier height is also examined and the barrier height is found to be constant from 150 to 300 K for each of the phases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108060
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  • 8
    Electronic Resource
    Electronic Resource
    Monolayer δ-doped heterojunction bipolar transistor characteristics from 10 to 350 K (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 682-684 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heterojunction bipolar transistors (HBTs) with bases composed of a single monolayer of dopant are found to have exponentially increasing current gain as the temperature is lowered, in contrast to the gains of homogeneously doped HBTs, which have little dependence on temperature. We present GaAs-AlGaAs HBTs with base doping as high as 3×1014 cm−2 with a room-temperature current gain of 14. The sheet resistance of such a layer is 270 Ω/square at room temperature, and the carriers are restricted to a 15 A(ring) layer, implying an extremely short base transit time. AT 77 K the gain increases to 220, while the base resistance decreases to 190 Ω/square. Therefore by operating this HBT at low temperature we have achieved for the first time high gain and low base resistance in a HBT with an infinitesimally thin base.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105364
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  • 9
    Electronic Resource
    Electronic Resource
    Nonlinear dependencies of Si diffusion in δ-doped GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1452-1454 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We examine atomic diffusion of Si, when initially δ doped into very pure GaAs layers grown by gas source molecular beam epitaxy. A nonlinear Si diffusion coefficient versus inverse temperature is observed as a two-component Arrhenius dependence in which the activation energies change by 1.5 eV. Furthermore, when Si diffusion is thermally activated with the lower energy kinetics, the corresponding impurity profile grows in width linearly with the anneal time. We explain the above departures of measured Si diffusivity from classical impurity diffusion via a nonequilibrated concentration of vacancies generated at the δ position during the anneal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105285
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  • 10
    Electronic Resource
    Electronic Resource
    Ballistic-electron-emission microscopy of (100)CoGa/n-type GaAs interfaces grown by molecular beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1062-1064 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scanning tunneling microscope (STM) was used for the first time to investigate the (100)CoGa/GaAs interfaces grown by molecular beam epitaxy. The surface image indicates a vertical variation of about 7.5 A(ring) with some domains of dimensions of about 170 A(ring). Furthermore, ballistic-electron-emission-microscopy spectra of this metal/semiconductor interface show two turn-on voltages, which account for the change of transmission probabilities for electrons with energies above the L minima and X minima of GaAs, respectively. The transmission into the X valleys of GaAs is found to be relatively stronger than that into the L valleys. This is explained by the CoGa band structure and the conservation of energy and transverse momentum for ballistically injected electrons. So far no ballistic electron current flowing into the Γ valley has been observed. For this reason, Schottky barrier height and its spatial variation measured by STM were not directly from the anticipated turn-on voltage at the Γ minimum, but instead, from the thresholds corresponding to transmission into higher valleys.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110774
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