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  • 1995-1999  (32)
  • 1
    Electronic Resource
    Electronic Resource
    A study of interlayer coupling in Co/Cu multilayers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3971-3974 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co(22 A(ring))/Cu multilayers with Cu thicknesses varying from 6 to 40 A(ring) are studied by vibrating-sample magnetometry and ferromagnetic-resonance spectroscopy (FMR). The magnetization was found to increase with decreasing Cu thickness, whereas the linewidth of the uniform mode of the FMR was found to decrease. This is attributed to the spin polarization of the Cu layers due to interlayer coupling and its effect on the lowered dimensionality of the Co layers. We also observed a peak on the high-field side of the uniform FMR mode, which we attribute to antiparallel coupling of adjacent ferromagnetic layers producing an "optical'' mode. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359561
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  • 2
    Electronic Resource
    Electronic Resource
    The spin-dependent electronic structure of amorphous magnetic alloys : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4419-4421 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin-resolved photoemission from FeB and CoB binary amorphous alloys has been measured using, for the first time, a synchrotron radiation source. A comparison of the experimental results with several ab initio calculations on two model systems Fe80B20 and Co77B23 shows that the spin-resolved photoemission provided a critical test of theoretical models, and gives insight into the spin-dependent electronic structures of these materials.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364787
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetization reversal and magnetoresistance in a lateral spin-injection device (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6682-6685 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the magnetization reversal and magnetoresistance (MR) behavior of a lateral spin-injection device. The device consists of a two-dimensional electron gas (2DEG) system in an InAs quantum well and two ferromagnetic (Ni80Fe20) contacts: an injector (source) and a detector (drain). Spin-polarized electrons are injected from the first contact and propagating through InAs are collected by the second contact. By engineering the shape of the permalloy film distinct switching fields (Hc) from the injector and the collector have been observed by scanning Kerr microscopy and MR measurements. Magneto-optic Kerr effect (MOKE) hysteresis loops demonstrate that there is a range of magnetic field (20–60 Oe), at room temperature, over which magnetization in one contact is aligned antiparallel to that in the other. The MOKE results are consistent with the variation of the magnetoresistance in the spin-injection device. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370504
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  • 4
    Electronic Resource
    Electronic Resource
    Ferromagnetic metal/semiconductor hybrid structures for magnetoelectronics (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5369-5371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the following new ferromagnetic metal/semiconductor heterostructure material systems: (1) Fe/InAs(100)-4×2, (2) Fe/InAs(graded)/GaAs(100), and (3) Fe/InAs/AlSb/GaSb/AlSb/InAs/GaAs resonant tunneling diodes. Single crystal Fe films have been stabilized in these structures using molecular beam epitaxy growth, as evidenced by low energy electron diffraction. The magnetic and electrical properties have been studied using in situ (and focused) magneto-optical Kerr effect, alternating gradient field magnetometry, and current–voltage measurements. The results show that Fe/InAs based heterostructures are very promising systems for use in future magnetoelectronic devices as they have well defined magnetic properties as well as favorable electrical properties. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369980
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  • 5
    Electronic Resource
    Electronic Resource
    Domain wall trapping probed by magnetoresistance and magnetic force microscopy in submicron ferromagnetic wire structures (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6178-6180 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetoresistance (MR) and domain structure of submicron NiFe wires and crosses fabricated using advanced electron beam lithography techniques have been studied in order to investigate the dependence of MR on the detailed domain configurations. While the 0.5 μm wire shows almost no longitudinal MR, the cross sample clearly shows a variation of the resistance upon sweeping the magnetic field, indicating an MR effect associated with the domain structures which form at the junction. By correlating the MR curves with the domain configurations obtained from magnetic force microscopy, we found that a 180° domain wall trapped in the junction of this 0.5 μm cross contributes a negative MR effect. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370213
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  • 6
    Electronic Resource
    Electronic Resource
    Spin-dependent electron transport at the ferromagnet/semiconductor interface (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5804-5806 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A search for spin-dependent electron transport at the ferromagnet/semiconductor interface has been made by measuring the bias dependence of a photon excited current through the interface. A circularly polarized laser beam was used to excite electrons with a spin polarization perpendicular to the film plane. In samples of the form 3 nm Au/5 nm Ni80Fe20/GaAs (110), a significant transport current was detected with a magnitude dependent on the relative orientation of the spin polarization and the magnetization vector. At perpendicular saturation, the bias dependence of the photocurrent is observed to change in the range 0.7–0.8 eV when the helicity is reversed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369925
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetoresistance in modulated width Ni80Fe20 wires (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1689-1692 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetization reversal processes and magnetoresistance behavior in micron-sized Ni80Fe20 wires with periodically modulated width have been studied. The wires were fabricated by electron beam lithography and a lift-off process. A combination of the magneto-optical Kerr effect and magnetoresistance measurements shows that the lateral shape of the wires greatly influences the magnetic and transport properties. For the field applied along the wire axis, the hysteresis loops are strongly influenced by the wire shapes. In contrast to the fixed width wires, the modulated width wires show an additional transverse magnetoresistance, which has been attributed to the shape-dependent demagnetizing fields and the inhomogeneous current density. The resistance of the modulated width wires is dominated by the contribution due to the narrow part of the wires; however, the inhomogeneous current density in the wide part of the wires contributes a significant transverse magnetoresistance. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369307
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  • 8
    Electronic Resource
    Electronic Resource
    Dynamic scaling of magnetic hysteresis in micron-sized Ni80Fe20 disks (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1609-1611 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The scaling of the magnetic hysteresis loop area of permalloy disks (20–400 μm diam) has been studied as a function of applied field amplitude H0 and frequency Ω using scanning Kerr microscopy. An increase in the dynamic coercivity with reduced size is observed for d〈100 μm in the frequency range studied (0.1–800 Hz). However, the loop area A follows the scaling relation A∝H0αΩβ, with α(approximate)0.14 and β(approximate)0.50 throughout the entire size range studied. Our results demonstrate that the dynamic scaling behavior is universal even though the lateral size influences the domain structure and magnetic reversal behavior. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123632
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  • 9
    Electronic Resource
    Electronic Resource
    Single crystal Fe films grown on InAs(100) by molecular beam epitaxy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 399-401 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin Fe films have been grown on InAs(100) by molecular beam epitaxy, and studied using in situ magneto-optical Kerr effect (MOKE), low energy electron diffraction (LEED), and scanning tunneling microscopy (STM). Despite the large lattice mismatch between Fe and InAs, the growth of Fe on InAs at 175 °C was found to be epitaxial with the orientation relationship Fe(100)〈001〉||InAs(100)〈001〉, as evidenced by LEED. STM images indicate that growth proceeds via a 3D Volmer–Weber mode. The magnetic hysteresis loops measured using in situ MOKE show a distinct cubic anisotropy with the easy axis along 〈001〉, the easy axis of bulk bcc Fe, which further confirms that well ordered single crystal Fe films have been stabilized on the InAs(100) substrate. Current–voltage measurements in the temperature range of 2.5–304 K show that Fe forms an ohmic contact on InAs. We propose that Fe/InAs is a suitable heterostructure for magnetoelectronic devices as, unlike Fe/GaAs, there is no Schottky barrier to electron transport. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121847
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  • 10
    Electronic Resource
    Electronic Resource
    Modelling for waste water treatment by Rhodopseudomonas palustris Y6 immobilized on fibre in a columnar bioreactor (1996)
    Springer
    Applied microbiology and biotechnology 44 (1996), S. 676-682 
    Details
    ISSN: 1432-0614
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Abstract A kinetic model of continuous treatment of waste water by Rhodopseudomonas palustris Y6 immobilized on soft fibre in a columnar bioreaction system was established. Good agreement was found between the model prediction and the experimental data from continuous operation [initial chemical oxygen demand (COD) concentration = 29.700 g/l] of the system. The optimum operational conditions for the maximum COD reduction capacity were investigated from the model prediction and the experimental data. The waste water treatment process may significantly increase the waste reduction capacity because a large amount of active biomass for COD reduction is immobilized in the system, resulting in operation stability. The results presented here provide a useful basis for further scaling up and efficient operation of waste water treatment processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00172502
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