Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
71 (1997), S. 72-74
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The first observation of atomic long range ordering in AlxGa1−xN thin films grown by electron cyclotron resonance assisted molecular beam epitaxy on sapphire and 6H-SiC substrates is reported. The phenomenon was investigated by studying the superlattice peaks (0001), (0003), and (0005) using x-ray diffraction. The relative intensity of these peaks was found to be largest for Al content in the 30%–50% range in qualitative agreement with expectations for an ordered structure of ideal Al0.5Ga0.5N stoichiometry. The average size of the ordered domains in the films was found to be within a factor of 4 of the films' thicknesses. The degree of ordering depends on the III/V flux ratio and exhibits a weaker dependence on Si doping. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.119916
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