Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 1004-1006
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
GaN/Al0.20Ga0.80N (50 Å/50 Å) multiple quantum wells (MQW) with 15 periods were grown on (0001) sapphire substrates by molecular beam epitaxy and evaluated by x-ray diffraction. To simulate an ultraviolet laser diode structure, the substrate was coated first with n-GaN as the bottom contact layer and n-Al0.25Ga0.75N as the corresponding cladding layer. The crystal structure of this system was investigated by studying the reciprocal lattice map of off-axis diffraction peaks as well as the θ–2θ pattern around the (0002) reflection. The MQW was found to be coherent and has the a-lattice parameter of the underlying Al0.25Ga0.75N. The good agreement between experimental and theoretical data in the relative intensity of up to third-order satellite peaks supports that the interfaces of the MQW are abrupt, and thus, interdiffusion of Ga and Al atoms at the growth temperature was negligible. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.120976
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