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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 4531-4535 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 8673-8680 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1975-1979 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence of AlxGa1−xAs/AlyGa1−yAs heterostructures has been performed in presence of high magnetic fields. Under the magnetic field the broad carbon related peak becomes resolved into several narrow peaks. Experimental results and a theoretical analysis based on the single band model suggest that these peaks are due to the recombination of free electrons with holes bound to neutral carbon atoms distributed in the several atomic layers in the well side of the interfaces of the heterostructures. Magnetic fields reduce the effects of interfacial roughness and make it possible to resolve the carbon related peak into several peaks. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry research 34 (1995), S. 4003-4008 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3534-3540 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the effects of surface roughness and grain boundary diffusion (GBD) at elevated temperatures on the Auger-electron-spectroscopy sputter depth profiles of Co–Ag bilayers and the GBD process of Ag atoms in Co. The Ag layer in the Ag/Co bilayer is transformed from a uniform layer to discrete islands by heat treatment. Enhanced mobility during sputtering at elevated temperatures makes Ag atoms migrate continually from islands to cover neighboring exposed Co, which reduces the size of Ag islands. On the other hand, the surface morphological modification of Co/Ag bilayer does not occur by heat treatment, and the depth profile at 340 °C resembles that from a uniformly intermixed film, which shows a drastic difference from that of Ag/Co. This is explained with a very thin and stable accumulation of Ag on the Co layer by GBD. A model of structural changes in Co/Ag subjected to ion sputtering at elevated temperatures is proposed on the basis of the results. The activation energy and pre-exponential factor for GBD of Ag in Co are found to be 0.46±0.06 eV and ∼1×10−8 cm2/s, respectively. © 1996 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4649-4654 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An UV multipass optical absorption method to increase the sensitivity for radical species detection has been developed for high temperature chemical kinetics experiments in a shock tube. The specific illustration is for OH radicals in the reflected shock wave regime. With a resonance lamp source, 12 optical passes were found to give a sufficient signal-to-noise ratio for a large range of [OH]. Two different calibration procedures using the reaction systems H2/O2 and C2H5I/NO2 were used, and a curve of growth was determined. The measured absorbance (ABS), was found to be dependent on both temperature and [OH]. The results can be expressed in a modified Beer's law form as,(ABS)=9.49×10−12T−0.5281[OH]0.8736.Using this curve of growth, the absorbance data from the above kinetics experiments were converted to concentration profiles. These were fully modeled with previously established mechanisms, giving excellent fits. The multipass method is compared to earlier systems that used both resonance lamp and laser absorption sources, and the increase in sensitivity is found to be substantial due primarily to the increased path length. This increased sensitivity inhibits the effects of any possible secondary chemistry thereby allowing chemically isolated experiments on OH + molecules to be performed at high temperatures. © 1995 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 2888-2893 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence properties of undoped wurtzite GaN epilayers grown on sapphire substrates with different buffer layer treatment conditions in metalorganic chemical vapor deposition (MOCVD) growth have been studied as a function of temperature. At low temperatures, very well resolved spectral features associated with the GaN band structure were observed. From the photoluminescence (PL) data for free excitons, an accurate value of the A exciton binding energy was found. The localization energies of the excitons bound to neutral acceptor are found to agree with Haynes' rule with the proportionality factor close to 0.1. The longitudinal optical (LO) phonon assisted photoluminescence associated with both the bound and free excitons has been observed. The characteristics of free excitons and their LO phonon replica have been studied in detail with the temperature variation and related to the point defects. The behavior of the peak energy and the full width at half maximum of the exciton band as a function of temperature reveals the change of the dominant recombination mechanism of the exciton with the temperature. Besides, all samples show peaks in the energy range of 3.15–3.19 eV, whose intensities vary with the annealing time of the buffer layer. We found that these peaks are related to the Zn impurity, which is unintentionally incorporated due to the memory effect in the MOCVD system. Intensities of Zn impurity related recombination and yellow band luminescence are also examined as functions of the temperature and annealing time of the buffer layer. Based on these temperature dependent PL results, the optimum growth conditions have been suggested. © 1999 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2800-2802 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous Ta2O5 thin films were formed by radio-frequency magnetron sputtering at the substrate temperature of 200 °C. The electrical properties of Ta2O5 thin films were investigated as a function of the film thickness. The dominant conduction mechanism transited from the electrode-limited conduction (Schottky emission current) at low field to the bulk-limited conduction (Poole–Frenkel current) at high field. With increasing thickness of the thin films, the surface roughness increased, whereas the transition fields from the electrode-limited to the bulk-limited conduction process decreased. To verify the effect of this surface roughness on the electric conduction mechanism, a two-dimensional numerical simulator, MEDICI, was used to simulate the electric-field distribution at the bulk region of the thin film and the interface region between the thin film and the electrode. © 1999 American Institute of Physics.
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  • 9
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality GaAs layers with excellent crystal quality and surface morphology were grown on InP substrates (GaAs/InP) using liquid phase epitaxy. Thin GaAs buffer layers heavily doped with Se were utilized to prevent the substrate meltback and the InP substrates patterned with gratings to reduce the dislocation density. Double crystal x-ray diffraction showed about 230 arcsec full width at half maximum of the (400) reflection, which represents significant improvement compared to the previously reported 350 arcsec of the GaAs/InP layer grown by chemical beam epitaxy using strained superlattice buffer layers. © 1995 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3357-3359 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating that the lateral wet oxidation of Al(Ga)As layer is strongly influenced by its thicknesses and heterointerface structures as well as Al compositions. The oxidation length decreases rapidly with decreasing AlAs thickness in the range of 〈80 nm and oxidation nearly stops at a thickness of ∼11 nm. Also, the oxidation rate of AlxGa1−xAs decreases quickly with decreasing Al composition, providing a high degree of oxidation selectivity. AlGaAs layers on both sides of AlAs layer reduce the lateral oxidation rate which is enhanced by the stress induced by oxidized AlAs. © 1996 American Institute of Physics.
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