ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High-resolution x-ray diffractometry (HRXRD) and transmission electron microscopy (TEM) are employed to characterize a quaternary IIIxIII1−xVyV1−y AlGaAsSb/GaInAsSb multiple quantum well (MQW) heterostructure. A method for uniquely determining the chemical composition of the strained quaternary quantum well, information previously thought to be unattainable using HRXRD, is thoroughly described. The misconception that HRXRD can separately find the well and barrier thickness of a MQW from the pendellosung fringe spacing is corrected and, thus, the need for TEM is motivated. Computer simulations show that the key in finding the well composition is the intensity of the higher order satellite peaks in the diffraction pattern. For the AlGaAsSb/InGaAsSb MQWs analyzed in this work, the variation in the intensity of the third-order satellite peak is identified as a sensitive measure of the quantum well composition. Using HRXRD on an MQW semiconductor laser device layer, the ability to resolve this higher order peak and interpret the information contained in it is demonstrated for the first time. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.370569
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